ATP202-TL-H [ONSEMI]
N 沟道功率 MOSFET，30V，50A，12mΩ;
| 型号： | ATP202-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道功率 MOSFET，30V，50A，12mΩ 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1317A
ATP202
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 50A, 12m , Single ATPAK
Features
•
•
•
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
DSS
V
±20
V
GSS
I
50
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
150
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
40
W
°
D
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
45
25
mJ
A
AS
I
AV
Note : 1 V =10V, L=100 H, I =25A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP202-TL-H
1.5
Packing Type: TL
Marking
6.5
4.6
2.6
0.4
0.4
ATP202
4
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/91708PA TIIM TC-00001568 No. A1317-1/7
ATP202
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
μA
μA
V
(BR)DSS
D
GS
=30V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
10
D
Forward Transfer Admittance
| yfs |
=10V, I =25A
17
S
D
R
R
(on)1
(on)2
I
I
=25A, V =10V
GS
9
14
12
20
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=13A, V =4.5V
GS
DS
Input Capacitance
Ciss
1650
285
160
16
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
DS
t
t
t
t
(on)
d
r
185
93
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
93
ns
Total Gate Charge
Qg
27
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=15V, V =10V, I =50A
GS
7.5
4
DS
D
V
SD
I =50A, V =0V
S GS
0.97
1.2
Switching Time Test Circuit
V
IN
V =15V
DD
10V
0V
I
=25A
D
V
IN
R =0.6Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP202
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP202-TL-H
Pb Free and Halogen Free
No. A1317-2/7
ATP202
I
D
-- V
DS
I
-- V
D GS
70
60
50
40
30
20
70
60
50
40
30
20
Tc=25°C
V
DS
=10V
4.0V
V
=3.5V
GS
10
0
10
0
0
0.5
1.0
1.5
2.0
IT14012
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT14013
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
30
25
20
15
10
30
25
20
15
10
Single pulse
Tc=25°C
Single pulse
I
=13A
D
25A
5
0
5
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, V
-- V
IT14014
Case Temperature, Tc -- °C
IT14015
GS
| yfs | -- I
I
-- V
D
S SD
5
100
7
V
=0V
V
=10V
GS
5
3
2
DS
Single pulse
3
2
10
7
5
3
2
10
7
1.0
7
5
5
3
2
0.1
3
2
7
5
3
2
0.01
7
1.0
5
3
2
7
5
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14017
1.0
10
100
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT14016
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
7
5
f=1MHz
V
V
=15V
=10V
DD
GS
5
3
2
3
2
1000
100
7
5
7
5
t
f
3
2
3
2
t (on)
d
10
100
7
5
0.1
7
2
3
5
7
2
3
5
7
10
2
3
5
7
0
5
10
15
20
25
30
IT14019
1.0
Drain Current, I -- A
IT14018
Drain-to-Source Voltage, V
DS
-- V
D
No. A1317-3/7
ATP202
A S O
V
GS
-- Qg
3
2
10
9
I
=150A
=50A
PW≤10μs
V
=15V
DP
DS
=50A
I
D
100
7
5
I
D
8
3
2
7
6
10
7
5
Operation in
this area is
limited by R (on).
5
3
2
4
DS
3
1.0
7
5
2
3
2
Tc=25°C
Single pulse
1
0
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
0
5
10
15
20
25
30
IT14020
1.0
10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
IT14021
DS
P
-- Tc
E
-- Ta
D
AS
120
100
80
45
40
35
30
25
20
15
10
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT14011
Case Temperature, Tc -- °C
IT14022
Ambient Temperature, Ta -- °C
No. A1317-4/7
ATP202
Taping Specification
ATP202-TL-H
No. A1317-5/7
ATP202
Outline Drawing
Land Pattern Example
ATP202-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1317-6/7
ATP202
Note on usage : Since the ATP202 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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PS No. A1317-7/7
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