ATP101-TL-H [ONSEMI]
P-Channel Power MOSFET, -30V, -25A, 30mΩ;型号: | ATP101-TL-H |
厂家: | ONSEMI |
描述: | P-Channel Power MOSFET, -30V, -25A, 30mΩ 开关 脉冲 晶体管 |
文件: | 总7页 (文件大小:337K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1646A
ATP101
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 25A, 30m , Single ATPAK
Features
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±20
V
GSS
I
--25
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
--75
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
30
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
25
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
AV
--13
Note : 1 V = 10V, L=200 H, I = 13A
-- --
*
μ
DD
2 L 200 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP101-TL-H
1.5
Packing Type: TL
Marking
6.5
4.6
2.6
0.4
0.4
ATP101
4
LOT No.
TL
Electrical Connection
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
1
3 : Source
4 : Drain
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/12710PA TKIM TC-00002233 No. A1646-1/7
ATP101
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
(BR)DSS
D GS
I
V
V
=--30V, V =0V
--1
A
A
μ
DSS
DS
GS
I
=±16V, V =0V
DS
±10
μ
GSS
GS
V
(off)
|
V
=--10V, I =--1mA
--1.2
--2.6
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=--10V, I =--13A
D
17
S
|
DS
R
R
(on)1
(on)2
=--13A, V =--10V
GS
23
36
30
51
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--7A, V =--4.5V
GS
m
Input Capacitance
Ciss
875
220
155
9.2
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
70
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
80
ns
d
f
70
ns
Total Gate Charge
Qg
18.5
3.2
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--25A
GS
DS
D
4.0
V
SD
I =--25A, V =0V
S GS
--0.99
--1.5
Switching Time Test Circuit
V = --15V
DD
V
IN
0V
--10V
I
= --13A
D
V
IN
R =1.15Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP101
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP101-TL-H
Pb Free and Halogen Free
No. A1646-2/7
ATP101
I
D
-- V
DS
I
-- V
D GS
--25
--20
--15
--10
--30
--25
--20
--15
--10
Tc=25°C
V
= --10V
DS
Single pulse
--5
0
--5
0
0
--0.5
--1.0
--1.5
--2.0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT15313
Drain-to-Source Voltage, V
DS
-- V
IT15312
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
80
70
60
50
40
30
20
80
70
60
50
40
30
Single pulse
Tc=25°C
Single pulse
I = --7A
D
--13A
20
10
10
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
Gate-to-Source Voltage, V
-- V
IT15314
Case Temperature, Tc -- °C
IT15315
GS
| yfs | -- I
I
S
-- V
SD
D
7
5
3
2
5
V
=0V
V
= --10V
DS
GS
Single pulse
3
2
--10
7
5
3
2
10
--1.0
7
7
5
5
3
2
--0.1
3
2
7
5
3
2
--0.01
7
1.0
5
3
2
7
--0.001
5
2
3
5
7
2
3
5
7
--10
2
3
5
7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT15317
--0.1
--1.0
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15316
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
3
2
V
= --15V
f=1MHz
DD
2 V = --10V
GS
100
1000
7
5
7
5
t
f
3
2
3
2
t (on)
10
d
100
7
5
7
2
3
5
7
2
3
5
7
--10
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT15319
--0.1
--1.0
Drain Current, I -- A
IT15318
Drain-to-Source Voltage, V -- V
DS
D
No. A1646-3/7
ATP101
A S O
V
GS
-- Qg
2
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
= --15V
DS
= --25A
I
= --75A
--100
PW≤10μs
DP
I
D
7
5
3
2
I
= --25A
D
--10
7
5
3
2
Operation in
this area is
limited by R (on).
--1.0
DS
7
5
3
2
--1
0
Tc=25°C
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
0
2
4
6
8
10
12
14
16
18
20
--1.0
--10
Total Gate Charge, Qg -- nC
IT15320
Drain-to-Source Voltage, V
DS
-- V
IT15321
P
-- Tc
E
-- Ta
D
AS
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT10478
IT15322
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A1646-4/7
ATP101
Taping Specification
ATP101-TL-H
No. A1646-5/7
ATP101
Outline Drawing
Land Pattern Example
ATP101-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1646-6/7
ATP101
Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1646-7/7
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