5LP01SP-AC [ONSEMI]
P-Channel Small Signal MOSFET, -50V, -0.07A, 23Ω, Single SPA, 2500-REEL;
| 型号： | 5LP01SP-AC |
| 厂家： | 
ONSEMI |
| 描述： | P-Channel Small Signal MOSFET, -50V, -0.07A, 23Ω, Single SPA, 2500-REEL |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6621A
5LP01SP
P-Channel Small Signal MOSFET
http://onsemi.com
–
–
Ω
50V, 0.07A, 23 , Single SPA
Features
•
Low ON-resistance
•
•
•
Ultrahigh-speed switching
2.5V drive
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
value
-50
Unit
V
V
DSS
V
±10
V
GSS
I
-0.07
-0.28
0.25
A
D
Drain Current (Pulse)
Power Dissipation
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
W
°C
°C
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7524-007
SPA
SC-72
5LP01SP
500pcs./bag
Pb-Free
SPA
SC-72
5LP01SP-AC
2,500pcs./box
2.2
4.0
Marking
Electrical Connection
0.4
0.5
XB
LOT No.
2
0.4
0.4
3
1
2
3
1.3
1.3
1
1 : Source
2 : Drain
3 : Gate
3.0
3.8
SPA
Semiconductor Components Industries, LLC, 2014
April, 2014
42214 TKIM TC-00003114/91400 TS IM TA-1953 No.6621-1/6
5LP01SP
at Ta=25°C
Electrical Characteristics
Value
typ
Parameter
Symbol
Conditions
Unit
V
min
-50
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
I =-1mA, V =0V
D GS
(BR)DSS
I
V
=-50V, V =0V
10
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
-1.4
μ
GSS
GS DS
V
(th)
V
DS
=-10V, I =-100
A
μ
-0.4
70
V
GS
D
g
Forward Transconductance
V
=-10V, I =-40mA
100
mS
Ω
FS
DS D
R
R
R
(on)1
(on)2
(on)3
I
=-40mA, V =-4V
18
20
23
28
60
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=-20mA, V =-2.5V
GS
Ω
I
D
=-5mA, V =-1.5V
GS
30
Ω
Input Capacitance
Ciss
7.4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=-10V, f=1MHz
4.2
DS
1.3
t
t
t
t
(on)
20
d
r
35
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
160
150
1.40
0.16
0.23
0.85
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
DS
=-10V, V =-10V, I =-70mA
GS
D
V
SD
I =-70mA, V =0V
S GS
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --25V
DD
V
IN
0V
--4V
I
= --40mA
L
D
V
R =607Ω
IN
PW=10μs
D.C.≤1%
D
V
OUT
G
5LP01SP
P.G
50Ω
S
No.6621-2/6
5LP01SP
I
D
-- V
GS(th)
I
-- V
DS
D
--0.14
--0.07
--0.06
--0.05
V
= --10V
DS
--0.12
--0.10
--0.04
--0.08
--0.06
--0.04
--0.03
--0.02
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT00090
Gate to Source Voltage, V
GS
-- V
IT00091
Drain to Source Voltage, V
-- V
DS
R
(on) -- V
R
(on) -- I
DS D
DS
GS
40
35
100
V
= --4V
Ta=25°C
GS
7
5
30
25
3
2
--40mA
Ta=75°C
25°C
I
=--20mA
D
20
15
10
--25°C
10
--0.01
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
2
3
5
7
2
3
--0.1
Gate to Source Voltage, V
GS
-- V
IT00092
Drain Current, I -- A
IT00093
D
R
DS
(on) -- I
R
(on) -- I
D
DS
D
100
1000
V
= --2.5V
V
= --1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
100
7
3
2
--25°C
25°C
5
3
2
Ta=75°C
--25°C
10
--0.001
10
--0.01
2
3
5
7
2
3
2
3
5
7
2
3
--0.1
--0.01
IT00094
Drain Current, I -- A
D
IT00095
Drain Current, I -- A
D
g
R
DS
(on) -- Ta
-- I
FS
D
40
1.0
V
= --10V
DS
7
5
35
3
2
30
0.1
25
20
7
5
3
2
15
10
0.01
--0.01
2
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT00096
--0.1
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00097
D
No.6621-3/6
5LP01SP
I
F
-- V
SD
SW Time -- I
D
1000
3
2
V
V
= --25V
= --4V
V
=0
DD
GS
GS
7
5
3
2
t
f
--0.1
t (off)
d
7
5
100
7
5
3
2
t
r
3
2
t (on)
d
--0.01
--0.5
10
--0.01
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT00098
2
3
5
7
--0.1
IT00099
Forward Diode Voltage, V
SD
-- V
Drain Current, I -- A
D
V
-- Qg
Ciss, Coss, Crss -- V
GS
DS
--10
100
V
I
= --10V
DS
D
f=1MHz
7
5
--9
--8
--7
= --70mA
3
2
10
7
5
Ciss
--6
--5
--4
--3
--2
Coss
3
2
1.0
7
5
Crss
3
2
--1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
--5
--10 --15 --20 --25 --30 --35
--40 --45
--50
Drain to Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
IT00100
IT00101
P
-- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02382
No.6621-4/6
5LP01SP
Outline Drawing
5LP01SP-AC
Mass (g) Unit
0.13
mm
* For reference
No.6621-5/6
5LP01SP
Outline Drawing
5LP01SP
Mass (g) Unit
0.13
mm
* For reference
Note on usage : Since the 5LP01SP is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.6621-6/6
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