5LN01C-TB-E [ONSEMI]

N 沟道小信号 MOSFET，50V，0.1A，7.8Ω，单 CP;


型号：	5LN01C-TB-E
厂家：	ONSEMI
描述：	N 沟道小信号 MOSFET，50V，0.1A，7.8Ω，单 CP
文件：	总6页 (文件大小：257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : EN6555C

5LN01C

N-Channel Small Signal MOSFET

http://onsemi.com

50V, 0.1A, 7.8 , Single CP

Features

•

Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±10

GSS

0.1

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW 10 s, duty cycle 1%

0.4

≤

0.25

°C

Tch

150

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Ordering & Package Information

Device

Package

Shipping

memo

7013A-013

3,000pcs./

reel

5LN01C-TB-E

SC-59, TO-236,

SOT-23, TO-236AB

Pb-Free

2.9

0.1

5LN01C-TB-E

5LN01C-TB-H

Pb-Free

and

Halogen Free

3,000pcs./

reel

5LN01C-TB-H

SC-59, TO-236,

SOT-23, TO-236AB

Packing Type: TB

Marking

0.95

0.4

1 : Gate

2 : Source

3 : Drain

Electrical Connection

Semiconductor Components Industries, LLC, 2013

June, 2013

62613 TKIM TC-00002951/62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 No.6555-1/6

5LN01C

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

=1mA, V =0V

(BR)DSS

=50V, V =0V

DSS

DS GS

=±8V, V =0V

±10

1.3

GSS

GS DS

(off)

=10V, I =100

0.4

yfs

Forward Transfer Admittance

=10V, I =50mA

0.13

0.18

(on)1

(on)2

(on)3

=50mA, V =4V

7.8

9.9

D GS

Static Drain to Source On-State Resistance

=30mA, V =2.5V

7.1

=10mA, V =1.5V

Input Capacitance

Ciss

6.6

4.7

1.7

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=10V, f=1MHz

(on)

See speciﬁed Test Circuit.

Turn-OFF Delay Time

Fall Time

(off)

190

105

1.57

0.20

0.32

0.85

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=10V, V =10V, I =100mA

I =100mA, V =0V

S GS

1.2

Switching Time Test Circuit

=25V

=50mA

R =500Ω

PW=10μs

D.C.≤1%

OUT

5LN01C

P.G

50Ω

No.6555-2/6

5LN01C

-- V

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.20

0.18

0.16

0.14

=10V

3.5V

4.0V

=1.5V

0.12

0.10

0.08

0.06

0.04

0.02

0.01

0.02

0.2

0.4

0.6

0.8

1.0

IT00054

0.5

1.0

1.5

2.0

2.5

3.0

Gate to Source Voltage, V

-- V

IT00055

Drain to Source Voltage, V

-- V

(on) -- V

(on) -- I

DS D

100

=4V

Ta=25°C

50mA

=30mA

Ta=75°C

25°C

--25°C

1.0

0.01

0.1

Gate to Source Voltage, V

-- V

IT00056

Drain Current, I -- A

IT00057

(on) -- I

DS D

100

=2.5V

=1.5V

Ta=75°C

--25°C

Ta=75°C

--25°C

25°C

1.0

0.001

0.01

0.1

0.01

Drain Current, I -- A

IT00058

Drain Current, I -- A

IT00059

(on) -- Ta

| yfs | -- I

1.0

=10V

0.1

0.01

--60 --40 --20

80 100 120 140 160

0.1

Ambient Temperature, Ta -- °C

IT00060

Drain Current, I -- A

IT00061

No.6555-3/6

5LN01C

-- V

SW Time -- I

1000

=25V

=4V

=0V

t (off)

0.1

100

t (on)

0.01

0.5

0.01

0.6

0.7

0.8

0.9

1.0

1.1

IT00062

0.1

IT00063

Diode Forward Voltage, V

-- V

Drain Current, I -- A

Ciss, Coss, Crss -- V

-- Qg

100

f=1MHz

=10V

=100mA

Ciss

Coss

Crss

1.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Drain to Source Voltage, V

-- V

IT00064

Total Gate Charge, Qg -- nC

IT00065

PD -- Ta

0.3

0.25

0.2

0.15

0.1

0.05

100

120

140

160

Ambient Temperature, Ta -- °C

IT02006

No.6555-4/6

5LN01C

Outline Drawing

Land Pattern Example

5LN01C-TB-E, 5LN01C-TB-H

Mass (g) Unit

0.013

Unit: mm

* For reference

0.8

0.95

No.6555-5/6

5LN01C

Note on usage : Since the 5LN01C is a MOSFET product, please avoid using this device in the vicinity of

highly charged objects.

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the

part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PS No.6555-6/6

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