50A02CH-TL-H [ONSEMI]

双极晶体管,-50V,-0.5A,低 VCE(sat),PNP 单;
50A02CH-TL-H
型号: 50A02CH-TL-H
厂家: ONSEMI    ONSEMI
描述:

双极晶体管,-50V,-0.5A,低 VCE(sat),PNP 单

晶体管
文件: 总5页 (文件大小:301K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
50A02CH  
Bipolar Transistor  
50V, 0.5A, Low VCE(sat), PNP Single  
www.onsemi.com  
Features  
High Collector Current Capability  
Low Collector to Emitter Saturation Voltage (Resistance):  
R
(sat) typ=210mΩ [I =0.5A, I =50mA]  
CE  
C
B
ELECTRICAL CONNECTION  
Low ON-Resistance (Ron)  
Pb-Free, Halogen Free and RoHS compliance  
3
1 : Base  
1
2 : Emitter  
3 : Collector  
Typical Applications  
Low-Frequency Amplifier  
High Speed Switching  
Small Motor Drive  
2
Muting Circuit  
MARKING  
3
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)  
1
2
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Value  
Unit  
V
CPH3  
V
50  
50  
5  
CBO  
CEO  
EBO  
V
V
V
V
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
I
I
500  
1.0  
mA  
A
C
Collector Current (Pulse)  
Collector Dissipation (Note 2)  
Junction Temperature  
CP  
P
700  
mW  
°C  
°C  
C
Tj  
150  
Storage Temperature  
Tstg  
55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
Note 2 : Surface mounted on ceramic substrate(600mm2  
× 0.8mm)  
© Semiconductor Components Industries, LLC, 2016  
April 2016 - Rev. 2  
1
Publication Order Number :  
50A02CH/D  
50A02CH  
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)  
Value  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
100  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
I
V
V
V
V
V
=40V, I =0A  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
CE  
CB  
E
=4V, I =0A  
100  
C
h
=2V, I =10mA  
200  
500  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
=10V, I =50mA  
690  
MHz  
pF  
T
C
Cob  
=10V, f=1MHz  
3.8  
Collector to Emitter Saturation  
Voltage  
V
V
V
(sat)  
(sat)  
I =100mA, I =10mA  
60  
120  
1.2  
mV  
V
CE  
C
B
Base to Emitter Saturation Voltage  
I =100mA, I =10mA  
0.9  
BE  
C
B
Collector to Base Breakdown  
Voltage  
I =10μA, I =0A  
50  
V
(BR)CBO  
C
E
Collector to Emitter Breakdown  
Voltage  
V
V
I =1mA, R =  
BE  
50  
5  
V
(BR)CEO  
(BR)EBO  
C
Emitter to Base Breakdown Voltage  
Turn-On Time  
I =10μA, I =0A  
V
E
C
30  
170  
30  
t
t
t
ns  
ns  
ns  
on  
See specified Test  
Circuit  
Storage Time  
stg  
f
Fall Time  
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.  
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
Switching Time Test Circuit  
www.onsemi.com  
2
50A02CH  
www.onsemi.com  
3
50A02CH  
www.onsemi.com  
4
50A02CH  
PACKAGE DIMENSIONS  
unit : mm  
CPH3  
CASE 318BA  
ISSUE O  
1 : Base  
2 : Emitter  
3 : Collector  
Recommended  
Soldering Footprint  
0.6  
0.95  
0.95  
ORDERING INFORMATION  
Device  
Marking  
AX  
Package  
Shipping (Qty / Packing)  
3,000 / Tape & Reel  
CPH3  
(Pb-Free)  
50A02CH-TL-E  
50A02CH-TL-H  
CPH3  
(Pb-Free / Halogen Free)  
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States  
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,  
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including  
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can  
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are  
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or  
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all  
applicable copyright laws and is not for resale in any manner.  
www.onsemi.com  
5

相关型号:

50A02CH_10

Low-Frequency General-Purpose Amplifier Applications
SANYO

50A02CH_12

Low-Frequency General-Purpose Amplifi er Applications
SANYO

50A02MH

Low-Frequency General-Purpose Amplifier Applications
SANYO

50A02MH-TL-E

双极晶体管,-50V,-0.5A,低 VCE (sat),PNP 单 MCPH3
ONSEMI

50A02SP

50A02SP
SANYO

50A02SS

Low-Frequency General-Purpose Amplifier Applications
SANYO

50A02SS-TL-E

双极晶体管,-50V,-0.4A,低饱和压,PNP 单 SSFP
ONSEMI

50A1000V

SILICON RECTIFIERS
YANGJIE

50A100V

SILICON RECTIFIERS
YANGJIE

50A10101

IC TTL VERZOEGERUNG AKTIV 10/100NS
ETC

50A10151

Logic IC
ETC

50A10201

IC TTL VERZOEGERUNG AKTIV 20/200NS
ETC