4N35 [ONSEMI]
6-Pin DIP Package Phototransistor Output Optocoupler;
| 型号： | 4N35 |
| 厂家： | 
ONSEMI |
| 描述： | 6-Pin DIP Package Phototransistor Output Optocoupler 输出元件 光电 |
| 文件： | 总10页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
6-Pin General Purpose
Phototransistor
Optocouplers
PDIP6
M TYPE
CASE 646CG
PDIP6
STD TYPE
CASE 646CU
Product Preview
4N35
Description
PDIP6
S TYPE
CASE 646CV
The general purpose optocouplers consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a standard
plastic 6−pin dual−in−line package.
Features
• Minimum Current Transfer Ratio at I = 10 mA, V = 10 V:
F
CE
MARKING DIAGRAM
• 100% for 4N35
• Safety and Regulatory Approvals:
ON
♦ UL1577, 5,000 VAC
for 1 Minute
RMS
4N35
VXYYD
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation
Voltage (Pending)
ON
4N35
V
= Logo
Applications
= Specific Device Code
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
= One−Digit Year Code
= Digit Work Week
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
X
YY
D
= Assembly Package Code
SCHEMATIC
ANODE 1
6
5
BASE
CATHODE 2
COLLECTOR
N/C 3
4
EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
This document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
September, 2022 − Rev. P0
4N35/D
4N35
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 V
<300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
1360
V
peak
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production Test
PR
1594
V
peak
IORM
with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.4
175
DTI
T
S
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
ꢀ
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
T
T
Storage Temperature
−55 to +125
−55 to +110
260 for 10 seconds
200
°C
°C
STG
Operating Temperature
OPR
T
Lead Solder Temperature
Total Device Power Dissipation
°C
SOL
P
mW
D
EMITTER
I
DC / Average Forward Input Current
Reverse Input Voltage
50
6
mA
V
F
V
P
R
LED Power Dissipation @ T = 25°C
70
3.8
mW
D
A
Derate Above 100°C
mW/°C
DETECTOR
V
CEO
V
CBO
V
ECO
Collector−to−Emitter Voltage
Collector−to−Base Voltage
Emitter−to−Collector Voltage
80
80
7
V
V
V
P
D
Detector Power Dissipation @ T = 25°C
150
9
mW
mW/°C
A
Derate Above 100°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
4N35
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
I = 10 mA
−
−
−
1.20
−
1.50
10
−
V
V
F
F
I
R
Reverse Leakage Current
Input Capacitance
V
R
= 6.0 V
ꢁ
A
C
V = 0, f = 1 MHz
30
pF
in
DETECTOR
BV
BV
BV
BV
Collector−to−Emitter Breakdown Voltage
Collector−to−Base Breakdown Voltage
Emitter−to−Collector Breakdown Voltage
Emitter−to−Base Breakdown Voltage
Collector−to−Emitter Dark Current
Collector−to−Base Dark Current
Capacitance
I
I
= 1.0 mA, I = 0
80
80
7
−
−
−
−
−
−
8
−
−
V
V
CEO
CBO
ECO
EBO
C
F
= 0.1 mA, I = 0
C
F
I = 0.1 mA, I = 0
E
−
V
F
I = 0.1 mA, I = 0
E
7
−
V
F
I
I
V
= 10 V, I = 0
−
50
20
−
nA
nA
pF
CEO
CBO
CE
CB
CE
F
V
V
= 10 V
−
C
= 0 V, f = 1 MHz
−
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio, Collector−to−Emitter
Collector−to−Emitter Saturation Voltage
I = 10 mA, V = 10 V
100
−
−
−
−
%
V
F
CE
V
I
C
= 0.5 mA, I = 10 mA
0.3
CE (SAT)
F
AC CHARACTERISTIC
Ton
Turn−on Time
I
= 2 mA, V = 10 V,
L
−
−
10
9
12
12
ꢁ s
ꢁ s
C
CC
R = 100 (Figure 11)
Toff
Turn−off Time
I = 2 mA, V = 10 V,
C CC
R = 100 (Figure 11)
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
t = 1 Minute
Min
5000
−
Typ
−
Max
−
Unit
VAC
RMS
CISO
V
I−O
V
I−O
= 0 V, f = 1 MHz
0.2
−
−
pF
11
RISO
Isolation Resistance
=
500 VDC, T = 25°C
10
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
4N35
TYPICAL PERFORMANCE CURVES
200
100
10
1
V
= 5 V
CE
180
160
140
120
100
80
T = 25°C
A
T = 100_C
A
0_C
85_C
25_C
−55_C
60
40
20
0
0.1
0.5
1.0
1.5
2.0
1
10
100
V , FORWARD VOLTAGE (mA)
F
I , FORWARD CURRENT (mA)
F
Figure 1. LED Forward Current vs. Forward Voltage
Figure 2. Current Transfer Ratio vs. Forward Current
1.0
120
100
80
60
40
20
0
Normalized to R = Open
BE
0.8
0.6
0.4
0.2
0.0
I = 20 mA
F
I = 10 mA
F
I = 5 mA
F
V
CE
= 0.3 V
20 40 60 80 100 120
10
100
, BASE−EMITTER RESISTANCE (kꢀ)
1000
−60 −40 −20
0
T , AMBIENT TEMPERATURE (°C)
R
BE
A
Figure 3. Relative Current Ratio vs. Ambient
Temperature
Figure 4. Current Transfer Ratio (Saturated) vs.
Base−Emitter Resistance
6
1.0
Normalized to R = Open
BE
T = 25°C
A
0.5 mA
5
4
3
I = 20 mA
F
0.8
0.6
0.4
0.2
0.0
1 mA
I = 10 mA
F
3 mA
5 mA
7 mA
I = 5 mA
F
2
1
0
V
CE
= 5 V
10
100
, BASE−EMITTER RESISTANCE (kꢀ)
1000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
R
I , FORWARD CURRENT (mA)
BE
F
Figure 5. Current Transfer Ratio (Unsaturated) vs.
Base−Emitter Resistance
Figure 6. Collector−Emitter Saturation Voltage vs.
Forward Current
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4
4N35
TYPICAL PERFORMANCE CURVES (continued)
60
50
40
30
20
10
0
0.10
T = 25_C
I = 10 mA
A
F
I
C
= 0.5 mA
0.08
0.06
0.04
0.02
0.00
I = 30 mA
F
I = 20 mA
F
I = 10 mA
F
I = 5 mA
F
20 40 60 80 100 120
0
1
2
3
4
5
6
7
8
9
10
−60 −40 −20
0
V
CE
, COLLECTOR−EMITTER VOLTAGE (mA)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Collector Current vs. Collector−Emitter
Voltage
Figure 8. Collector−Emitter Saturation Voltage vs.
Ambient Temperature
100
3.0
Normalized to R = Open
V
= 5 V
V
= 10 V
BE
CC
CC
t
OFF
R = 100 ꢀ
I = 10 mA
F
L
2.5
2.0
1.5
1.0
0.5
0.0
I
= 2 mA
C
T = 25°C
A
t
F
10
1
t
R
t
ON
0.1
0.1
1
10
10
100
1000
10000
100000
R , LOAD RESISTANCE (kꢀ)
L
R
BE
, BASE−EMITTER RESISTANCE (kꢀ)
Figure 9. Switching Time vs. Load Resistance
Figure 10. Turn−on Time vs. Base−Emitter
Resistance
1.4
10000
1000
100
10
Normalized to R = Open
V
CE
= 10 V
BE
1.2
1.0
0.8
0.6
0.4
1
V
CC
= 5 V
R = 100 ꢀ
L
0.1
0.2
I
C
= 2 mA
T = 25°C
A
0.0
0.01
20 40 60 80 100 120
−60 −40 −20
0
10
100
1000
10000
100000
R
, BASE−EMITTER RESISTANCE (kꢀ)
T , AMBIENT TEMPERATURE (°C)
A
BE
Figure 11. Turn−off Time vs. Base−Emitter
Resistance
Figure 12. Collector Dark Current vs. Ambient
Temperature
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5
4N35
TYPICAL PERFORMANCE CURVES (continued)
80
70
60
50
40
30
20
10
0
160
140
120
100
80
60
40
20
0
25
50
75
100
125
25
50
75
100
125
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 13. Max Allowable Power Dissipation (LED)
vs. Ambient Temperature
Figure 14. Max Allowable Power Dissipation
(Detector) vs. Ambient Temperature
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
WAVE FORMS
TEST CIRCUIT
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
Adjust I to produce I = 2 mA
F
C
Figure 15. Switching Time Test Circuit and Waveform
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6
4N35
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
tP
240
220
200
180
160
140
120
100
80
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Profile Feature
Pb−Free Assembly Profile
150°C
200°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
Ramp−up Rate (t L to tP
)
Liquidous Temperature (TL)
Time (t L) Maintained Above (TL)
Peak Body Package Temperature
60 − 150 seconds
260°C +0°C / –5°C
30 seconds
) within 5°C of 260°C
Time (t P
6°C/second max.
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
8 minutes max.
Figure 16. Reflow Profile
ORDERING INFORMATION
†
Part Number
Package
DIP 6−Pin
Shipping
4N35
65 Units / Tube
4N35SR2
4N35SR2V
SMT 6−Pin (Lead Bend)
1000 Units / Tape & Reel
1000 Units / Tape & Reel
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
4N35TV
DIP 6−Pin, 0.4” Lead Spacing,
DIN EN/IEC60747−5−5 Option
65 Units / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
7
4N35
PACKAGE DIMENSIONS
PDIP6 7.12x6.50, 2.54P (M TYPE)
CASE 646CG
ISSUE O
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8
4N35
PACKAGE DIMENSIONS
PDIP6 7.12x6.50, 2.54P (STD TYPE)
CASE 646CU
ISSUE O
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9
4N35
PACKAGE DIMENSIONS
PDIP6 7.12x6.50, 2.54P (S TYPE)
CASE 646CV
ISSUE O
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
TECHNICAL SUPPORT
Email Requests to: orderlit@onsemi.com
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
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