3SK264-5-TG-E [ONSEMI]
N 沟道双门 MOSFET，15V，30mA，PG=23dB，NF=1.1dB，CP4;
| 型号： | 3SK264-5-TG-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道双门 MOSFET，15V，30mA，PG=23dB，NF=1.1dB，CP4 |
| 文件： | 总4页 (文件大小：1051K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN4901B
3SK264
N-Channnel Dual Gate MOSFET
15V,30mA,PG=23dB,NF=1.1dB, CP4
http://onsemi.com
Features
ꢀ
ꢀ
ꢀ
ꢀ
•
•
•
•
Enhancement type
Easy AGC (Cut off at V
ꢀ Smallꢀnoiseꢀfigure
=0V)
G2S
Excels in cross modulation characteristics
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
15
DS
8
8
V
±
±
G1S
G2S
V
I
30
200
mA
mW
D
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
D
Tch
125
C
C
°
°
Tstg
--55 to +125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
unit : mm (typ)
•ꢀPackageꢀ
:ꢀCP4
7014A-006
•ꢀJEITA,ꢀJEDECꢀ
:ꢀSC-61,ꢀSC-82AB,ꢀSOT-143,ꢀSOT-343
•ꢀMinimumꢀPackingꢀQuantity : 3,000 pcs./reel
2.9
3SK264-5-TG-E
Packing Type: TG
Marking
0.1
0.4
4
3
SJ
TG
2
1
0.6
0.95 0.85
Electrical Connection
1 : Drain
2 : Source
3 : Gate1
4 : Gate2
1
3
4
CP4
2
Semiconductor Components Industries, LLC, 2014
June, 2014
61014HK TA-4315/90512TKIM/82599TH(KT)/32295TS(KOTO) No.4901-1/4
3SK264
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Voltage
V
V
V
I
V
V
V
V
V
V
V
=0V, V
=0V, I =100 A
15
0
V
V
m
DS
G1S
G2S
DS
Gate1-to-Source Cutoff Voltage
Gate2-to-Source Cutoff Voltage
Gate1-to-Source Leakage Current
Gate2-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
(off)
(off)
=6V, V
=4V, I =100 A
0.7
0.9
1.3
1.6
m
G1S
DS
G2S
G1S
D
=6V, V
=3V, I =100 A
0.1
V
m
G2S
DS
D
= 6V, V
±
=V =0V
G2S DS
50
±
50
±
12
*
nA
nA
mA
mS
pF
pF
dB
dB
G1SS
G2SS
DSX
G1S
G2S
I
I
= 6V, V
±
=V =0V
G1S DS
=6V, V
G1S
=1.5V, V
=4V
G2S
5
*
DS
DS
yfs
=6V, I =10mA, V
=4V, f=1kHz
17
2.5
|
|
D
G2S
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Ciss
Crss
PG
V
=6V, V =0V, V
G1S
=4V, f=1MHz
DS
G2S
0.015
23
0.03
2.2
V
V
=6V, I =10mA, V
=4V, f=200MHz
=4V, f=200MHz
20
DS
D
G2S
Noise Figure
NF
=6V, I =10mA, V
1.1
DS
D
G2S
ꢀ:ꢀTheꢀ3SK264ꢀisꢀclassifiedꢀbyꢀI
as follows : (unit : mA)
*
DSX
Rank
5
I
5.0 to 12.0
DSX
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
PG, NF Specified Test Circuit
f=200MHz
~20pF
3
4
1
2
2
T
2
T
1000pF
47pF
OUT
IN
50Ω
50Ω
~20pF
1
2
~20pF
1
T
12Ω
1000pF
15kΩ
V
1000pF
G1S
V
V
DS
G2S
L : 1mmØ enamel wire 10mmØ
Ordering Information
Device
Package
CP4
Shipping
memo
3SK264-5-TG-E
3,000pcs./reel
Pb-Free
No.4901-2/4
3SK264
I
-- V
I
-- V
G1S
D
DS
D
25
20
15
10
20
16
12
V
=6V
V
=4.0V
1.8V
DS
G2S
3.5V
4.0V
4.5V
5.0V
5.5V
1.6V
1.4V
8
1.2V
1.0V
5
0
4
0
0.8V
0.6V
1.0V
0.5V
0
0.5
1.0
1.5
2.0
2.5
0
0
0
0
2
4
6
8
10
Drain-to-SourceꢀVoltage, V
-- V
Gate1-to-Source Voltage, V
-- V
ITR02882
ITR02883
DSꢀ
G1S
I
-- V
| yfs | -- V
D
G2S
G1S
25
20
15
10
25
20
15
V
=6V
V
=6V
DS
DS
f=1kHz
5.0V
5.5V
4.5V
10
5
5
0
0.75V
0.5V
0
0
0.5
1.0
1.5
2.0
2.5
ITR02885
1
2
3
4
5
Gate2-to-Source Voltage, V
-- V
Gate1-to-Source Voltage, V
-- V
ITR02884
G2S
G1S
Ciss -- V
| yfs | -- I
G2S
D
25
7
5
V
V
I
=6V
V
=6V
DS
DS
: V
=4V
f=1kHz
G1S G2S
=10mA
5.5V
5.0V
D
4.5V
20
15
f=1MHz
3
2
10
5
0
1.0
5
10
15
20
25
ITR02886
--1
0
1
2
3
4
Gate2-to-Source Voltage, V
G2S
-- V
DrainꢀCurrent,ꢀI -- mA
ITR02887
D
P
-- Ta
PG, NF -- V
D
G2S
240
30
20
10
4
V
V
I
=6V
DS
: V
=4V
G1S G2S
=10mA
PG
200
160
120
80
D
f=200MHz
3
2
NF
0
1
0
40
0
--10
1
2
3
4
5
6
0
20
40
60
80
100
120
140
Gate2-to-Source Voltage, V
-- V
AmbientꢀTemperature, Ta -- °C
ITR02888
ITR02889
G2S
No.4901-3/4
3SK264
Outline Drawing
Land Pattern Example
3SK264-5-TG-E
Mass (g) Unit
0.013
Unit: mm
mm
* For reference
1.9
0.8
1.2
1.8
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PSꢀNo.4901-4/4
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