2SK4094-1E [ONSEMI]
N 沟道功率 MOSFET，60V，100A，5mΩ，TO-220-3L;
| 型号： | 2SK4094-1E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道功率 MOSFET，60V，100A，5mΩ，TO-220-3L |
| 文件： | 总7页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0523B
2SK4094
N-Channel Power MOSFET
http://onsemi.com
Ω
60V, 100A, 5m , TO-220-3L
Features
•
ON-resistance R (on)1=3.8m (typ.)
Input capacitance Ciss=12500pF (typ.)
4V drive
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
60
Unit
V
V
DSS
V
±20
V
GSS
I
100
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
400
A
≤
μ
≤
1.75
90
W
W
Allowable Power Dissipation
P
D
Tc=25 C
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
850
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
70
Note : 1 V =30V, L=200 H, I =70A (Fig.1)
*
μ
DD
2 L 200 H, single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: TO-220-3L
7536-001
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
4.5
10.0
3.6
2SK4094-1E
Marking
Electrical Connection
1.3
2
(0.6)
8.9 MAX
K4094
LOT No.
1
1.52
1.27
0.8
0.5
3
1
2
3
1 : Gate
2 : Drain
3 : Source
2.54
2.54
TO-220-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/7
2SK4094
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
45
D
Forward Transfer Admittance
| yfs |
=10V, I =50A
75
S
D
R
R
(on)1
(on)2
I
I
=50A, V =10V
GS
3.8
4.9
5.0
7.0
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=50A, V =4V
GS
DS
Input Capacitance
Ciss
12500
1200
950
80
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
t
t
t
t
(on)
d
r
630
860
750
220
30
ns
See Fig.2
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =100A
GS
DS
D
55
V
SD
I =100A, V =0V
GS
1.0
1.2
S
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
IN
V =30V
DD
10V
0V
L
I
=50A
D
≥50Ω
V
IN
R =0.6Ω
L
D
V
OUT
2SK4094
PW=10μs
D.C.≤1%
10V
0V
V
DD
50Ω
G
2SK4094
P. G
50Ω
S
Ordering Information
Device
Package
TO-220-3L
Shipping
memo
Pb Free
2SK4094-1E
50pcs./magazine
No. A0523-2/7
2SK4094
I
D
-- V
DS
I
-- V
D GS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
Tc=25°C
Single pulse
V
=10V
DS
Single pulse
V
=3V
GS
60
60
40
40
20
0
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, V
-- V
IT11430
Gate-to-Source Voltage, V
GS
-- V
IT11431
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
10
9
20
18
16
14
12
10
8
I =50A
Single pulse
Single pulse
D
8
7
6
5
4
3
6
2
4
1
0
2
0
--50
--25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, V
-- V
IT11558
Case Temperature, Tc -- °C
IT11559
GS
| yfs | -- I
I
-- V
D
S SD
3
2
3
2
V
=0V
V
=10V
GS
DS
Single pulse
Single pulse
100
7
5
100
7
3
2
5
10
7
5
3
2
3
2
1.0
7
5
10
7
3
2
5
3
2
0.1
7
5
3
2
1.0
7
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT11435
0.1
1.0
10
100
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
IT11434
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
3
3
2
f=1MHz
V
=30V
=10V
DD
2
V
GS
10k
1000
7
5
7
5
t
f
3
2
3
2
100
1k
7
5
7
5
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
IT10474
0.1
1.0
10
100
IT10473
Drain Current, I -- A
Drain-to-Source Voltage, V -- V
DS
D
No. A0523-3/7
2SK4094
A S O
V
GS
-- Qg
10
9
1000
7
V
=30V
=100A
DS
I
=400A
≤10μs
DP
5
I
D
3
2
8
I
=100A
D
100
7
5
7
3
2
6
5
10
Operation in
this area is
limited by R (on).
7
5
4
3
2
DS
3
1.0
7
5
2
3
2
Tc=25°C
Single pulse
1
0
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
0
0
50
100
150
200
250
IT10475
1.0
10
100
IT10960
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
-- V
P
-- Ta
P
-- Tc
D
D
100
90
80
70
60
50
40
30
20
2.0
1.75
1.5
1.0
0.5
0
10
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
IT11548
IT10483
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT11439
Ambient Temperature, Ta -- °C
No. A0523-4/7
2SK4094
Magazine Specification
2SK4094-1E
No. A0523-5/7
2SK4094
Outline Drawing
2SK4094-1E
Mass (g) Unit
2.0
mm
* For reference
No. A0523-6/7
2SK4094
Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0523-7/7
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