2SK3820-DL-1E [ONSEMI]
N-Channel Power MOSFET, 100V, 26A, 60mΩ, Single TO-263-2L;
| 型号： | 2SK3820-DL-1E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET, 100V, 26A, 60mΩ, Single TO-263-2L |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8147A
2SK3820
N-Channel Power MOSFET
http://onsemi.com
100V, 26A, 60m TO-263-2L
Ω,
Features
•
ON-resistance R (on)1=45m (typ.)
Input capacitance Ciss=2150pF (typ.)
4V drive
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
100
Unit
V
V
DSS
V
±20
V
GSS
I
26
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
104
A
≤
μ
≤
1.65
50
W
W
°C
°C
mJ
A
Allowable Power Dissipation
P
D
Tc=25°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
84.5
26
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
AV
Note : 1 V =20V, L=200μH, I =26A (Fig.1)
*
DD
2 L 200μH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7535-001
TO-263-2L
(SC-83, TO-263)
2SK3820-DL-1E
800pcs./reel
Pb Free
2SK3820-DL-1E
Packing Type: DL
Marking
4.5
10.0
8.0
1.3
4
K3820
5.3
LOT No.
DL
0.254
0.5
1
2
3
1.27
0.8
Electrical Connection
2, 4
2.54
2.54
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6
2SK3820
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA, V =0V
D GS
(BR)DSS
I
V
=100V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
11
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =13A
D
19
S
|
DS
R
R
(on)1
(on)2
=13A, V =10V
GS
45
56
60
80
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=13A, V =4V
GS
m
Input Capacitance
Ciss
2150
160
110
20
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
34
ns
See Fig.2
Turn-OFF Delay Time
Fall Time
(off)
185
62
ns
d
f
ns
Total Gate Charge
Qg
44
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=50V, V =10V, I =26A
GS
7.8
9.8
1.0
DS
D
V
SD
I =26A, V =0V
S GS
1.2
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
V
=50V
V
DD
IN
10V
0V
D
L
≥50Ω
RG
I
=13A
D
V
IN
R =3.85Ω
L
G
D
V
OUT
PW=10μs
D.C.≤1%
2SK3820
10V
0V
V
50Ω
DD
S
G
2SK3820
P.G
50Ω
S
No.8147-2/6
2SK3820
I
D
-- V
I -- V
D GS
DS
40
35
30
25
20
15
10
40
35
30
25
20
15
10
Tc=25°C
V
DS
=10V
4V
V
GS
=3V
5
0
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DS
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, V
-- V
IT07855
Gate-to-Source Voltage, V
GS
-- V
IT07856
R
(on) -- V
R
DS
(on) -- Tc
DS
GS
120
110
100
90
130
120
110
100
90
I =13A
D
80
80
70
70
60
60
50
40
25°C
50
30
40
--25
20
°C
30
20
10
0
2
3
4
5
6
7
8
9
10
IT07857
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT07858
GS
⎪yfs⎪ -- I
I
S
-- V
SD
D
7
5
100
7
5
V
=0V
V
=10V
GS
DS
3
2
3
2
10
7
5
10
3
2
7
5
1.0
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5
0
0.3
0.6
0.9
1.2
1.5
IT07860
1.0
10
IT07859
Diode Forward Voltage, V -- V
SD
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
5
5
f=1MHz
V
V
=50V
=10V
DD
GS
3
2
3
2
Ciss
1000
100
7
5
7
5
3
2
3
2
t (on)
d
100
10
7
5
7
2
3
5
7
2
3
5
7
2
3
5
0
5
10
15
20
25
30
0.1
1.0
10
Drain Current, I -- A
IT07861
Drain-to-Source Voltage, V
DS
-- V
IT07862
D
No.8147-3/6
2SK3820
A S O
V
-- Qg
GS
10
9
3
2
I
=104A(PW≤10μs)
V
=50V
DP
DS
100
7
5
3
2
I =26A
D
I =26A
D
8
7
10
7
5
6
3
2
5
1.0
Operation in
this area is
7
4
5
3
2
limited by R (on).
3
DS
0.1
2
7
5
3
2
Tc=25°C
Single pulse
1
0
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2 3
0
5
10
15
20
25
30
35
40
45
50
1.0
10
100
Drain to Source Voltage, V -- V IT17015
DS
Total Gate Charge, Qg -- nC
IT07863
P
-- Ta
P
-- Tc
D
D
2.0
60
50
40
30
20
1.65
1.5
1.0
0.5
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT07811
Case Temperature, Tc -- °C
IT07822
No.8147-4/6
2SK3820
Outline Drawing
Land Pattern Example
2SK3820-DL-1E
Mass (g) Unit
Unit: mm
1.5
mm
* For reference
No.8147-5/6
2SK3820
Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.8147-6/6
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