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2SK3815(SMP) [ONSEMI]

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,23A I(D),TO-262VAR;
2SK3815(SMP)
型号： 2SK3815(SMP)
厂家： ONSEMI    ONSEMI
描述：

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,23A I(D),TO-262VAR
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Ordering number : EN8053A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3815  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Motor drive, DC / DC converter.  
•
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
23  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
A
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
92  
A
DP  
1.65  
40  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
19.8  
Avalanche Enargy (Single Pulse) *1  
Avalanche Current *2  
E
AS  
I
23  
AV  
Note : *1 V =20V, L=50µH, I =23A  
DD  
AV  
*2 L≤50µH, single pulse  
Marking : K3815  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N2807 TI IM TC-00001041 / 93004QA TS IM TB-00000601 No.8053-1/5  
2SK3815  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
60  
V
(BR)DSS  
D
GS  
=60V, V =0V  
I
V
V
V
V
1
µA  
µA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
I
= ±16V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
9
2.6  
D
Forward Transfer Admittance  
yfs  
⏐
=10V, I =12A  
15  
S
⏐
D
R
(on)1  
I
=12A, V =10V  
GS  
42  
60  
55  
85  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=12A, V =4V  
GS  
Input Capacitance  
Ciss  
V
V
V
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
775  
125  
105  
11  
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
t (on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
d
t
r
85  
Turn-OFF Delay Time  
Fall Time  
t (off)  
72  
d
t
f
78  
Total Gate Charge  
Qg  
V
V
V
=30V, V =10V, I =23A  
GS  
19  
DS  
DS  
DS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
=30V, V =10V, I =23A  
GS  
2.5  
4.1  
1.04  
D
=30V, V =10V, I =23A  
GS  
D
V
I =23A, V =0V  
S GS  
1.5  
SD  
Package Dimensions  
unit : mm (typ)  
Package Dimensions  
unit : mm (typ)  
7513-002  
7001-003  
4.5  
4.5  
10.2  
10.2  
1.3  
1.3  
1
2
3
1.2  
0.8  
0.4  
0.8  
0 to 0.3  
0.4  
1.2  
2.55  
2.55  
1
2
3
1 : Gate  
1 : Gate  
2 : Drain  
3 : Source  
2 : Drain  
3 : Source  
2.55  
2.55  
2.55  
2.55  
SANYO : SMP-FD  
SANYO : SMP  
Switching Time Test Circuit  
Unclamped Inductive Test Circuit  
V
=30V  
DD  
V
IN  
≥50Ω  
L
10V  
0V  
RG  
I
=12A  
D
V
IN  
R =2.5Ω  
DUT  
L
D
V
OUT  
PW=10µs  
D.C. 1%  
15V  
0V  
≤
V
50Ω  
DD  
G
2SK3815  
P.G  
50Ω  
S
No.8053-2/5  
2SK3815  
I
-- V  
I
-- V  
GS  
D
DS  
D
30  
25  
20  
15  
10  
30  
25  
20  
15  
10  
Tc=25  
°
C
V
DS  
=10V  
4V  
V
=3V  
GS  
5
0
5
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
1
2
3
4
5
6
Drain-to-Source Voltage, V  
-- V  
Gate-to-Source Voltage, V  
-- V  
IT07800  
IT07801  
DS  
GS  
R
DS  
(on) -- V  
R
DS  
(on) -- Tc  
GS  
140  
140  
I =12A  
D
120  
100  
80  
120  
100  
80  
60  
60  
25  
°C  
40  
40  
--25  
°
C
20  
0
20  
0
2
3
4
5
6
7
8
9
10  
--50  
--25  
0
25  
50  
75  
100  
125  
150  
Gate-to-Source Voltage, V  
-- V  
IT07802  
Case Temperature, Tc -- °C  
IT07803  
GS  
I
-- V  
SD  
⏐yfs⏐ -- I  
D
S
5
100  
V =0V  
GS  
7
V =10V  
DS  
5
3
2
3
2
10  
7
10  
7
5
3
2
5
1.0  
7
3
2
5
3
2
0.1  
7
5
1.0  
7
3
2
5
3
0.1  
0.01  
2
3
5
7
2
3
5
7
2
3
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.0  
10  
Drain Current, I -- A  
SW Time -D- I  
D
IT07804  
Diode Forward Voltage, V  
SD  
Ciss, Coss, Crss -- V  
-- V  
IT07805  
DS  
3
2
1000  
f=1MHz  
V
=30V  
=10V  
DD  
7
V
GS  
5
3
2
1000  
Ciss  
7
5
100  
7
5
3
2
3
2
t (on)  
d
100  
7
10  
7
5
5
3
3
2
3
5
7
2
3
5
7
10  
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT07807  
0.1  
1.0  
Drain Current, I -- A  
Drain-to-Source Voltage, V -- V  
DS  
IT07806  
D
No.8053-3/5  
2SK3815  
A S O  
V
-- Qg  
GS  
2
10  
9
V
=30V  
=23A  
I
=92A  
DS  
PW≤10µs  
DP  
100  
7
5
I
D
8
I
=23A  
3
2
D
7
100ms  
10  
7
5
6
5
3
2
4
Operation in  
this area is  
1.0  
7
5
3
limited by R (on).  
DS  
2
3
2
1
0
Tc=25°C  
Single pulse  
0.1  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
0
0
0
5
10  
15  
20  
IT07808  
1.0  
10  
100  
IT07809  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V  
DS  
-- V  
P
-- Ta  
P
-- Tc  
D
D
2.0  
45  
40  
35  
30  
25  
20  
15  
10  
1.65  
1.5  
1.0  
0.5  
0
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Amibient Tamperature, Ta -- °C  
IT07811  
Case Tamperature, Tc -- °C  
IT07810  
E
-- Ta  
AS  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
150  
175  
IT10478  
Ambient Temperature, Ta -- °C  
No.8053-4/5  
2SK3815  
Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of November, 2007. Specifications and information herein are subject  
to change without notice.  
PS No.8053-5/5  

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