2SK3748-1E [ONSEMI]
N 沟道功率 MOSFET,1500V,4A,7Ω;型号: | 2SK3748-1E |
厂家: | ONSEMI |
描述: | N 沟道功率 MOSFET,1500V,4A,7Ω |
文件: | 总7页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN8250B
2SK3748
N-Channel Power MOSFET
http://onsemi.com
Ω
1500V, 4A, 7 , TO-3PF-3L
Features
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
•
High reliability (Adoption of HVP process)
•
Attachment workability is good by Mica-less package
•
Avalanche resistance guarantee
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
1500
DSS
V
±20
V
GSS
I
*
D
4
A
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
8
A
≤
μ
≤
3.0
W
W
Allowable Power Dissipation
P
D
Tc=25 C
65
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
165
4
mJ
A
AS
I
AV
Shows chip capability
*
1 V =50V, L=20mH, I =4A (Fig.1)
*
DD
2 L 20mH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-3PF-3L
7538A-002
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
5.5
15.5
3.6
2SK3748-1E
3.0
Marking
Electrical Connection
2
K3748
2.0
2.0
LOT No.
1
2.0
4.0
0.9
0.75
3
1
2
3
1 : Gate
2 : Drain
3 : Source
5.45
5.45
TO-3PF-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7
2SK3748
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
1500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=1200V, V =0V
I
I
V
V
V
V
100
DSS
DS
GS
DS
DS
GS
=16V, V =0V
DS
±10
3.5
GSS
V
(off)
GS
=10V, I =1mA
2.5
1.7
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=20V, I =2A
2.8
S
D
R
I
=2A, V =10V
D GS
5
790
140
70
7
Ω
DS
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
=30V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
t
t
t
t
(on)
17
d
r
Rise Time
75
See Fig.2
Turn-OFF Delay Time
(off)
360
116
80
d
f
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Qgs
Qgd
V
=200V, V =10V, I =4A
GS
6.4
36
DS
D
V
I =4A, V =0V
GS
0.94
340
1.2
SD
S
t
I =4A, V =0V, dis/dt=100A/
s
μ
ns
rr
S
GS
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
200V
DD
V
IN
L
≥50Ω
RG
10V
0V
I
=2A
D
V
R =100Ω
IN
L
2SK3748
10V
0V
D
V
OUT
V
50Ω
DD
PW=10μs
D.C.≤0.5%
G
2SK3748
P.G
S
R
GS
50Ω
Ordering Information
Device
Package
TO-3PF-3L
Shipping
memo
2SK3748-1E
30pcs./magazine
Pb Free
No.8250-2/7
2SK3748
I
-- V
I
D
-- V
GS
D
DS
8
7
6
5
4
3
2
7
6
5
4
3
2
V
=20V
Tc=25°C
DS
Tc= --25°C
6V
25°C
75°C
5V
V
=4V
1
0
GS
1
0
0
10
20
30
40
50
60
70
IT09205
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
GS
-- V
IT09206
R
(on) -- V
R
DS
(on) -- Tc
DS
GS
14
12
10
8
16
14
12
10
8
I =2A
V
I =2A
D
D
=10V
GS
Tc=75°C
6
25°C
6
4
4
--25°C
2
0
2
0
0
2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT09207
Case Temperature, Tc -- °C
IT09208
GS
I
-- V
SD
| yfs | -- I
S
D
7
5
2
V
=20V
V
=0V
DS
GS
10
7
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
3
2
7
5
3
2
0.01
0.1
0.1
2
3
5
7
2
3
5
7
0
0.3
0.6
0.9
1.2
1.5
IT09210
1.0
Drain Current, I -- A
D
IT09209
Diode Forward Voltage, V -- V
SD
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
10000
1000
f=1MHz
V
V
=200V
=10V
7
5
DD
GS
7
5
3
2
3
2
1000
Ciss
7
5
100
3
2
7
5
100
7
5
3
2
t (on)
d
3
2
10
0.1
10
2
3
5
7
2
3
0
5
10
15
20
25
30
35
40
45
50
1.0
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT09212
IT09211
D
DS
No.8250-3/7
2SK3748
V
-- Qg
A S O
GS
2
10
9
V
=200V
DS
I
=8A(PW≤10μs)
DP
I =4A
10
7
5
I =4A
D
D
8
3
2
7
1.0
6
7
5
5
3
2
Operation in this area
is limited by R (on).
4
DS
3
0.1
7
5
2
3
2
1
0
Tc=25°C
Single pulse
0.01
1.0
0
10
20
30
40
50
60
70
80
90
2
3
5
7
2
3
5
7
2
3
5
7
2
3
10
100
1000
IT16890
Total Gate Charge, Qg -- nC
IT09213
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
-- Tc
D
D
3.5
3.0
2.5
2.0
1.5
1.0
80
70
65
60
50
40
30
20
0.5
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
IT09215
IT09216
No.8250-4/7
2SK3748
Magazine Specification
2SK3748-1E
No.8250-5/7
2SK3748
Outline Drawing
2SK3748-1E
Mass (g) Unit
5.5
mm
* For reference
No.8250-6/7
2SK3748
Note on usage : Since the 2SK3748 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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PS No.8250-7/7
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