2SK3557-7-TB-E [ONSEMI]
N 沟道 JFET，15V，10 至 32mA，35mS，CP;
| 型号： | 2SK3557-7-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，15V，10 至 32mA，35mS，CP |
| 文件： | 总7页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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3
N-Channel JFET
15 V, 10 to 32 mA, 35 mS, CP
2SK3557
1: Source
2: Drain
3: Gate
1
2
SC−59 / CP3
CASE 318BJ
MARKING DIAGRAM
IR
Applications
• AM Tuner RF Amplification
• Low Noise Amplifier
Features
• Large | yfs |
• Small Ciss
• Ultrasmall−sized Package Permitting 2SK3557−applied Sets to be
Made Smaller and Slimer
ELECTRICAL CONNECTION
• Ultralow Noise Figure
• These are Pb−Free Devices
3
Product & Package Information
• Package: CP
• JEITA, JEDEC: SC−59, TO−236, SOT−23, TO−236AB
• Minimum Packing Quantity: 3,000 Pcs./Reel
1
2
Specifications
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
†
Device
Package
Shipping
Parameter
Drain−to−Source Voltage
Gate−to−Drain Voltage
Gate Current
Symbol Conditions
Ratings
Unit
V
2SK3557−6−TD−E
CP
(Pb−Free)
3,000 / Tape &
Reel
V
15
−15
DSX
GDS
2SK3557−7−TD−E
CP
(Pb−Free)
3,000 / Tape &
Reel
V
V
I
G
10
mA
mA
mW
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Drain Current
I
D
50
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
D
200
Tj
Tstg
150
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2022 − Rev. 2
2SK3557/D
2SK3557
ELECTRICAL CHARACTERISTICS (at Ta = 25°C)
Ratings
Typ
−
Min
−15
−
Max
−
Parameter
Gate−to−Drain Breakdown Voltage
Gate Cutoff Current
Symbol
Conditions
Unit
V
V
I = −10 mA, V = 0 V
G DS
(BR)GDS
I
V
V
V
V
V
V
V
= −10 V, V = 0 V
−
−1.0
−1.5
32*
−
nA
V
GSS
G S
DS
DS
DS
DS
DS
DS
DS
Cutoff Voltage
V
GS
(off)
= 5 V, I = 100 mA
−0.3
10*
24
−
−0.7
−
D
Drain Current
I
= 5 V, V = 0 V
mA
mS
pF
pF
dB
DSS
GS
Forward Transfer Admittance
Input Capacitance
| yfs |
Ciss
Crss
NF
= 5 V, V = 0 V, f = 1 kHz
35
GS
= 5 V, V = 0 V, f = 1 MHz
10.0
2.9
1.0
−
GS
Reverse Transfer Capacitance
Noise Figure
= 5 V, V = 0 V, f = 1 MHz
−
−
GS
= 5 V, R = 1 kW, I = 1 mA,
−
−
g
D
f = 1 kHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SK3557 is classified by I
as follows: (unit: mA)
DSS
Table 1.
Rank
6
7
I
10.0 to 20.0
16.0 to 32.0
DSS
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2
2SK3557
20
16
12
8
20
16
12
8
V
= 0
GS
V
= 0
GS
−0.1 V
−0.2 V
−0.1 V
−0.2 V
−0.3 V
−0.3 V
−0.4 V
−0.4 V
−0.5 V
4
4
−0.6 V
−0.7 V
−0.5 V
−0.6 V
−0.7 V
12
0
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
V
DS
, Drain−to−Source Voltage (V)
V
DS
, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
Figure 2. ID − VDS
22
20
18
16
14
12
10
8
16
14
12
10
8
V
DS
= 5 V
V
= 5 V
DS
I
= 15 mA
DSS
I
= 30 mA
DSS
20 mA
15 mA
6
Ta = −25°C
6
4
2
10 mA
25°C
4
75°C
2
0
0
−1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2
0
0.2
−1.2 −1.0 −0.8 −0.6 −0.4 −0.2
0
0.2
V
GS
, Gate−to−Source Voltage (V)
V
GS
, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
Figure 4. ID − VGS
7
5
100
V
= 5 V
V
V
= 5 V
= 0
DS
DS
30 mA
f = 1 kHz
GS
7
f = 1 kHz
I
= 15 mA
DSS
3
2
5
3
2
10
7
5
3
2
10
7
2
3
5
5
3
5
7
2
3
5
7
2
3
10
1.0
10
I , Drain Current (mA)
D
I
, Drain Current (mA)
DSS
Figure 5. ⎜ yfs ⎜ − ID
Figure 6. ⎜ yfs ⎜ − ID
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3
2SK3557
3
2
3
2
V
= 5 V
= 100 mA
V
= 0
DS
GS
I
D
f = 1 MHz
1.0
10
7
5
7
5
3
3
7
2
3
5
7
2
3
5
7
2
3
10
1.0
10
I
, Drain Current (mA)
V
DS
, Drain−to−Source Voltage (V)
DSS
Figure 7. VGS(off) − IDSS
Figure 8. Ciss − VDS
10
10
8
V
= 0
V
DS
= 5 V
DS
7
5
f = 1 MHz
I = 1 mA
D
Rg = 1 kW
6
3
2
4
1.0
2
7
5
0
0.01
7
2
3
5
7
2
3
2 3 5 7
0.1
2 3 5 7
2 3 5 7
2 3 5 7
100
10
1.0
1.0
10
V
DS
, Drain−to−Source Voltage (V)
f, Frequency (kHz)
Figure 9. Crss − VDS
Figure 10. NF − f
10
8
240
V
= 5 V
= 1 mA
DS
I
D
200
160
120
80
f = 1 kHz
6
4
2
40
0
0
2 3 5 7
2 3 5 7
10
2 3 5 7
100
2 3 5 7
0
20
40
60
80 100 120 140 160
0.1
1.0
1000
Rg, Signal Source Resistance (kW)
Ta, Ambient Temperature (°C)
Figure 11. NF − Rg
Figure 12. PD − Ta
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4
2SK3557
Land Pattern Example
0.8
0.95
0.95
Figure 13. Land Pattern Example
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3X L
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
3
E1
E
1
MILLIMETERS
2
DIM
A
A1
A2
b
c
D
E
E1
e
MIN
0.95
0.00
0.20
0.35
0.10
2.75
2.30
1.35
MAX
1.35
0.10
0.40
0.50
0.20
3.05
2.70
1.65
e
3X b
M
0.10
C A
TOP VIEW
SIDE VIEW
A
0.95 BSC
0.35
c
3X
L
0.75
A2
GENERIC
A1
SEATING
PLANE
C
MARKING DIAGRAM
END VIEW
XXX MG
RECOMMENDED
G
SOLDERING FOOTPRINT*
3X
1
3X
0.80
1.00
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
PAGE 1 OF 1
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