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2SD1724-T [ONSEMI]

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN;
2SD1724-T
型号： 2SD1724-T
厂家： ONSEMI    ONSEMI
描述：

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN

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Ordering number:ENN2047A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB1167/2SD1724  
100V/3A Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Relay drivers, high-speed inverters, converters.  
2043B  
Features  
[2SB1167/2SD1724]  
8.0  
2.0  
· Low collector-to-emitter saturation voltage.  
2.7  
4.0  
· High f .  
T
· Excellent linearity of h  
· Fast switching time.  
.
FE  
1.6  
0.8  
0.8  
0.6  
0.5  
1 : Emitter  
1
2
3
( ) : 2SB1167  
2 : Collector  
3 : Base  
SANYO : TO-126LP  
2.4  
4.8  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(–)120  
(–)100  
(–)6  
(–)3  
(–)6  
1.2  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
20  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
(–)1  
Collector Cutoff Current  
I
V
=(–)100V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=(–)4V, I =0  
(–)1  
EBO  
C
h
1
=(–)5V, I =(–)0.5A  
70*  
40  
400*  
FE  
FE  
C
h
2
=(–)5V, I =(–)2A  
C
(130)  
180  
MHz  
MHz  
Gain-Bandwidth Product  
f
V
=(–)10V, I =(–)0.5A  
T
CE  
C
* : The 2SB1167/2SD1724 are classified by 0.5A h as follows :  
Continued on next page.  
FE  
Rank  
Q
R
S
T
h
70 to 140  
100 to 200 140 to 280 200 to 400  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
http://semicon.sanyo.com/en/network  
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4  
2SB1167/2SD1724  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Output Capacitance  
Symbol  
Conditions  
=(–)10V, f=1MHz  
CB  
Unit  
min  
max  
C
V
I
25(40)  
pF  
mV  
mV  
V
ob  
(–200) (–500)  
150 400  
Collector-to-Emitter Saturation Voltage  
V
V
=(–)1.5A, I =(–)0.15A  
CE(sat)  
C
B
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
I
I
I
=(–)1.5A, I =(–)0.15A  
(–)0.9 (–)1.2  
BE(sat)  
C
C
C
B
V
V
V
=(–)10µA, I =0  
(–)120  
(–)100  
(–)6  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=(–)1mA, R =∞  
V
BE  
I =(–)10µA, I =0  
V
E
C
(100)  
100  
ns  
ns  
ns  
ns  
ns  
Turn-ON Time  
t
See specified Test Circuit  
on  
900  
Storage Time  
Fall Time  
t
See specified Test Circuit  
See specified Test Circuit  
stg  
(800)  
50(50)  
t
f
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.≤1%  
OUTPUT  
I
B2  
INPUT  
R
B
V
R
R
L
50Ω  
+
+
100µF  
470µF  
V
= --5V  
V
=25V  
CC  
BE  
I =10I = --10I =1.5A  
B1 B2  
C
(For PNP, the polarity is reversed.)  
I
-- V  
I
-- V  
CE  
C
CE  
C
--2.0  
--1.6  
--1.2  
--0.8  
2.0  
2SB1167  
From top  
--20mA  
--18mA  
--16mA  
2SD1724  
From top  
20mA  
18mA  
16mA  
1.6  
1.2  
0.8  
14mA  
6mA  
4mA  
2mA  
--2mA  
--0.4  
0
0.4  
0
I =0  
B
I =0  
B
0
--1  
--2  
--3  
--4  
– V  
--5  
ITR09112  
0
1
2
3
4
5
Collector-to-Emitter Voltage, V  
CE  
Collector-to-Emitter Voltage, V – V  
CE  
ITR09113  
I
-- V  
I -- V  
C CE  
C
CE  
--1.0  
--0.8  
--0.6  
--0.4  
1.0  
0.8  
0.6  
0.4  
2SB1167  
2SD1724  
--0.2  
0
0.2  
0
I =0  
I =0  
B
B
0
--10  
--20  
--30  
--40  
– V  
--50  
ITR09114  
0
10  
20  
30  
40  
50  
Collector-to-Emitter Voltage, V – V  
CE  
ITR09115  
Collector-to-Emitter Voltage, V  
CE  
No.2047–2/4  
2SB1167/2SD1724  
I
-- V  
I
-- V  
BE  
C
BE  
C
--3.5  
--3.0  
--2.5  
--2.0  
--1.5  
--1.0  
3.5  
2SD1724  
2SB1167  
V
=5V  
V
= --5V  
CE  
CE  
3.0  
2.5  
2.0  
1.5  
1.0  
--0.5  
0
0.5  
0
0
5
2
5
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
– V  
--1.2  
ITR09116  
0
5
5
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
ITR09117  
Base-to-Emitter Voltage, V  
BE  
Base-to-Emitter Voltage, V  
BE  
– V  
h
-- I  
h
-- I  
FE C  
FE  
C
1000  
5
1000  
2SD1724  
2SB1167  
7
5
V
=5V  
V
= --5V  
CE  
CE  
3
2
3
2
25°C  
°C  
100  
5
100  
--25  
7
5
3
2
3
2
10  
5
10  
7
5
2
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
--0.01  
--0.1  
--1.0  
--10  
ITR09118  
0.01  
0.1  
10  
ITR09119  
Collector Current, I – A  
Collector Current, I –1.A0  
C
C
f
-- I  
Cob -- V  
CB  
T
C
2
5
2SB1167 / 2SD1724  
f=1MHz  
2SB1167 / 2SD1724  
=10V  
V
CE  
3
2
100  
7
5
100  
7
5
3
2
3
2
10  
7
5
(For PNP, minus sign is omitted.)  
(For PNP, minus sign is omitted.)  
10  
3
7
2
3
5
7
2
3
7
2
3
5
7
2
3
5
7
2
0.1  
1.0  
1.0  
10  
100  
Collector Current, I – A  
Collector-to-Base Voltage, V  
-- V  
ITR09121  
ITR09120  
C
CB  
V
(sat) -- I  
V
(sat) -- I  
CE  
C
CE C  
5
5
2SB1167  
2SD1724  
3
2
3
2
I
/ I =10  
I
/ I =10  
C
B
C
B
--1000  
5
1000  
7
5
3
2
3
2
--100  
5
100  
7
5
3
2
3
2
--10  
10  
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
--0.01  
--0.1  
--1.0  
--10  
ITR09122  
0.01  
0.1  
1.0  
10  
ITR09123  
Collector Current, I – A  
Collector Current, I – A  
C
C
No.2047–3/4  
2SB1167/2SD1724  
V
(sat) -- I  
V
(sat) -- I  
BE  
BE  
C
C
--10  
10  
2SB1167  
2SD1724  
/ I =10  
7
7
I
C
/ I =10  
B
I
C
B
5
5
3
2
3
2
--1.0  
1.0  
7
5
7
5
3
2
3
2
5
2
3
5
2
3
5
2
3
5
5
2
3
5
2
3
5
2
3
5
--0.01  
--0.1  
--1.0  
0.01  
0.1  
1.0  
Collector Current, I – A  
Collector Current, I – A  
ITR09124  
ITR09125  
C
C
A S O  
P
-- Ta  
C
24  
20  
16  
12  
8
10  
I
=6A  
2SB1167 / 2SD1724  
CP  
5
I =3A  
C
3
2
1.0  
5
3
2
0.1  
5
2SB1167 / 2SD1724  
Tc=25°C  
Single pulse  
4
3
2
1.2  
0
For PNP, minus sign is omitted.  
0.01  
3
5
7
2
3
5
7
2
3
5
7
2
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
Collector-to-Emitter Voltage, V  
– V  
ITR09126  
Ambient Temperature, Ta – ˚C  
ITR09127  
CE  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of January, 2004. Specifications and information herein are subject  
to change without notice.  
PS No.2047–4/4  

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