2SC6095-TD-E [ONSEMI]
双极晶体管，80V，2.5A，低饱和压，NPN 单 PCP;
| 型号： | 2SC6095-TD-E |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，80V，2.5A，低饱和压，NPN 单 PCP PC 开关 晶体管 |
| 文件： | 总7页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0411A
2SC6095
Bipolar Transistor
http://onsemi.com
( )
sat , NPN Single PCP
80V, 2.5A, Low V
CE
Applicaitons
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
120
120
80
Unit
V
Collector-to-Base Voltage
V
CBO
V
V
CES
Collector-to-Emitter Voltage
V
V
CEO
Emitter-to-Base Voltage
Collector Current
V
6.5
V
EBO
I
C
2.5
A
Collector Current (Pulse)
I
CP
4
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SC6095-TD-E
4.5
1.6
Packing Type: TD
Marking
1.5
TD
1
2
3
0.4
0.5
0.4
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/53006EA MSIM TB-00002345 No. A0411-1/7
2SC6095
Continued from preceding page.
Parameter
Symbol
Conditions
When mounted on ceramic substrate (250mm2 0.8mm)
Ratings
Unit
mA
W
Base Current
I
500
1.3
B
×
Collector Dissipation
P
C
Tc=25 C
3.5
W
°
Junction Temperature
Storage Temperature
Tj
Tstg
150
C
C
°
°
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=70V, I =0A
1
1
A
A
μ
CBO
CB E
I
V
=4V, I =0A
μ
EBO
EB C
h
V
CE
=5V, I =100mA
300
600
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =500mA
350
14
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
V
(sat)1
(sat)2
(sat)
I
C
=1A, I =50mA
100
90
150
135
1.2
CE
B
Collector-to-Emitter Saturation Voltage
V
I =1A, I =100mA
C B
CE
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
V
I
C
=1A, I =100mA
0.9
BE
B
V
I
C
=10 A, I =0A
120
120
80
V
μ
(BR)CBO
E
V
I
C
=100 A, R =0
V
μ
Ω
(BR)CES
BE
Collector-to-Emitter Breakdown Voltage
V
I
C
=1mA, R =
∞
BE
V
(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
I =10 A, I =0A
6.5
V
μ
(BR)EBO
E
C
t
t
t
40
920
32
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
V
10
R
R
B
R
L
50Ω
+
+
100μF
= --5V
470μF
V
V
=40V
CC
BE
I =10I = --10I =0.5A
C
B1
B2
Ordering Information
Device
Package
PCP
Shipping
1,000pcs./reel
memo
2SC6095-TD-E
Pb Free
No. A0411-2/7
2SC6095
I
-- V
I
-- V
BE
C
CE
C
2.0
1.6
1.2
0.8
2.5
2.0
1.5
1.0
V
=5V
CE
0.5
0
0.4
0
I =0mA
B
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11071
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, V
CE
-- V IT11070
Base-to-Emitter Voltage, V
-- V
BE
h
-- I
f
-- I
C
FE
C
T
1000
1000
V
CE
=10V
V
=5V
CE
7
5
7
5
3
2
--25°C
3
2
100
7
5
100
7
3
2
5
10
0.01
3
0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
0.1
1.0
0.1
1.0
IT11072
IT11073
Collector Current, I -- A
C
Collector Current, I -- A
C
V
(sat) -- I
Cob -- V
CE
C
CB
100
5
I
/ I =10
B
f=1MHz
C
7
5
3
2
0.1
3
2
7
5
3
2
10
7
5
0.01
7
5
3
0.01
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
100
IT11074
0.1
1.0
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I -- A
IT11075
C
V
(sat) -- I
C
V
(sat) -- I
BE
CE
C
5
3
2
I
/ I =10
B
I
/ I =20
B
C
C
3
2
0.1
1.0
7
5
7
5
3
2
3
0.01
2
0.01
7
0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0
2
3
5
0.1
1.0
0.1
Collector Current, I -- A
IT11077
Collector Current, I -- A
IT11076
C
C
No. A0411-3/7
2SC6095
A S O
100ms
P
-- Ta
C
7
5
1.4
1.3
1.2
I
=4A
<10μs
CP
I =2.5A
C
3
2
1.0
0.8
0.6
0.4
1.0
7
5
3
2
0.1
7
5
3
2
0.2
0
Tc=25°C
Single Pulse
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT11078
Collector-to-Emitter Voltage, V
-- V
IT11079
Ambient Temperature, Ta -- °C
CE
P
-- Tc
C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
IT11080
Case Temperature, Tc -- °C
No. A0411-4/7
2SC6095
Embossed Taping Specification
2SC6095-TD-E
No. A0411-5/7
2SC6095
Outline Drawing
Land Pattern Example
2SC6095-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No. A0411-6/7
2SC6095
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PS No. A0411-7/7
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