2SC5832(TP) [ONSEMI]

Transistor,;
2SC5832(TP)
型号: 2SC5832(TP)
厂家: ONSEMI    ONSEMI
描述:

Transistor,

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Ordering number : ENN7287  
NPN Epitaxial Planar Silicon Transistor  
2SC5832  
Driver Applications  
Applications  
Package Dimensions  
unit : mm  
Suitable for use in switching of inductive load  
(motor drivers, printer hammer drivers, relay drivers). 2045B  
[2SC5832]  
6.5  
5.0  
4
Features  
2.3  
0.5  
High DC current gain.  
Wide ASO.  
On-chip zener diode of 65±10V between collector and  
base.  
Uniformity in collector-to-base voltage.  
Large inductive load handling capability.  
0.85  
0.7  
1.2  
0.6  
0.5  
1 : Base  
2 : Collector  
3 : Emitter  
1
2
3
4 : Collector  
2.3  
2.3  
SANYO : TP  
unit : mm  
2044B  
[2SC5832]  
6.5  
2.3  
5.0  
0.5  
4
0.5  
0.85  
1
2
3
1 : Base  
0.6  
1.2  
0 to 0.2  
2 : Collector  
3 : Emitter  
4 : Collector  
2.3  
2.3  
SANYO : TP-FA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
GI IM  
13003 TS IM TA-3670 No.7287-1/4  
2SC5832  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
On-chip zener diode(65±10V)  
On-chip zener diode(65±10V)  
55  
55  
6
V
V
I
C
2
A
Collector Current (Pulse)  
I
4
A
CP  
1.0  
10  
150  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
10  
2
I
V
V
V
V
=40V, I =0  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
=5V, I =0  
mA  
EBO  
C
h
FE  
=5V, I =1A  
1000  
4000  
180  
C
Gain-Bandwidth Product  
Inductive Load  
f
=5V, I =1A  
MHz  
mJ  
V
T
C
Es / b  
L=100mH, R =100Ω  
BE  
25  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Turn-ON Time  
V
V
(sat)  
I
C
I
C
I
C
I
C
=1A, I =4mA  
1.0  
1.5  
2.0  
75  
CE  
B
(sat)  
=1A, I =4mA  
V
BE  
B
V
V
=100µA, I =0  
55  
55  
65  
65  
V
(BR)CBO  
(BR)CEO  
E
=1mA, R =∞  
BE  
75  
V
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
0.2  
3.5  
0.5  
µs  
µs  
µs  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Switching Time Test Circuit  
Es / b Test Circuit  
V
=20V, R =100  
PW=50µs, Duty Cycle1%  
OUTPUT  
CC  
BE  
I
= --I =4mA  
B1  
B2  
L
+V  
CC  
TUT  
TUT  
SW  
R
B
INPUT  
R
L
V
R
I
20Ω  
B
50Ω  
R
BE  
10k300Ω  
+
+
100µF  
470µF  
V
= --5V  
V
=20V  
CC  
BB  
I
=250A, I = --250A, I =1A  
B1 B2  
C
I
-- V  
I
-- V  
C BE  
C
CE  
2.0  
2.4  
V
CE  
=5V  
2.0  
1.6  
1.2  
0.8  
1.6  
1.2  
0.8  
0.4  
0
0.4  
0
I =0  
B
4
0
1
2
3
5
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
Collector-to-Emitter Voltage, V  
CE  
-- V  
Base-to-Emitter Voltage, V -- V  
BE  
ITR06005  
ITR06006  
No.7287-2/4  
2SC5832  
h
FE  
-- I  
Cob -- V  
CB  
C
1000  
3
2
V
=5V  
f=1MHz  
CE  
7
5
10000  
7
5
3
2
3
2
100  
1000  
7
5
7
5
3
2
3
2
100  
7
5
10  
0.1  
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
10  
2
3
5
0.1  
1.0  
1.0  
Collector-to-Base Voltage, V  
-- V  
ITR06008  
Collector Current, I -- A  
ITR06007  
CB  
V
(sat) -- CI  
V
(sat) -- I  
CE  
C
BE  
C
10  
10  
I
/ I =250  
B
I
/ I =250  
B
C
C
7
5
7
5
3
2
3
2
1.0  
1.0  
7
5
7
5
3
0.1  
3
0.1  
2
3
5
7
2
3
5
2
3
5
7
2
3
5
1.0  
1.0  
Collector Current, I -- A  
Collector Current, I -- A  
IT04364  
ITR06010  
C
C
I
-- L  
A S O  
C
10  
7
5
R
=100  
I
=4A  
BE  
10µs  
CP  
7
Tc=25°C  
3
2
I =2A  
C
5
1.0  
3
2
7
5
3
2
1.0  
0.1  
7
5
7
5
3
2
3
2
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5
7
10  
100  
1.0  
10  
L -- mH  
ITR06011  
Collector-to-Emitter Voltage, V  
-- V IT04365  
CE  
P
-- Ta  
P
-- Tc  
C
C
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
12  
10  
8
6
4
2
0
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT04366  
IT05327  
Case Temperature, Tc -- °C  
No.7287-3/4  
2SC5832  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of January, 2003. Specifications and information herein are subject  
to change without notice.  
PS No.7287-4/4  

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