2SC5226A-5 [ONSEMI]
TRANSISTOR,BJT,NPN,10V V(BR)CEO,70MA I(C),SOT-323;型号: | 2SC5226A-5 |
厂家: | ONSEMI |
描述: | TRANSISTOR,BJT,NPN,10V V(BR)CEO,70MA I(C),SOT-323 |
文件: | 总6页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1062
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
2SC5226A
Features
•
Low-noise
High gain
High cut-off frequency : f =7GHz typ.
: NF=1.0dB typ (f=1GHz).
: ⏐S21e⏐2=12dB typ (f=1GHz).
•
•
T
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
20
10
V
2
V
I
C
70
mA
mW
°C
°C
Collector Dissipation
P
150
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
E
I
=1V, I =0A
10
EBO
C
h
=5V, I =20mA
60*
270*
FE
C
Continued on next page.
* : The 2SC5226A is classified by 20mA hFE as follows :
Marking
Rank
LN3
3
LN4
4
LN5
5
h
FE
60 to 120
90 to 180
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408AB TI IM TC-00001340
No. A1062-1/6
2SC5226A
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
CE
V
CB
V
CB
V
CE
V
CE
V
CE
=5V, I =20mA
C
5
9
7
GHz
pF
T
Cob
=10V, f=1MHz
=10V, f=1MHz
0.75
0.5
12
1.2
Reverse Transfer Capacitance
Cre
S21e 21
S21e 22
pF
=5V, I =20mA, f=1GHz
C
dB
dB
dB
⏐
⏐
⏐
Forward Transfer Gain
Noise Figure
=2V, I =3mA, f=1GHz
C
8
⏐
NF
=5V, I =7mA, f=1GHz
1.0
1.8
C
Package Dimensions
unit : mm (typ)
7023-009
0.3
0.15
3
0 to 0.1
1
2
0.65 0.65
0.3
0.6
0.9
2.0
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
h
FE
-- I
f
-- I
T
C
C
3
2
2
V
=5V
V
=5V
CE
CE
10
100
7
5
7
5
3
2
3
2
1.0
10
7
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
3
5
3
5
7
2
7
2
7
2
1.0
1.0
10
100
10
100
ITR07919
Collector Current, I -- mA
Collector Current, I -- mA
ITR07920
C
C
Cob -- V
Cre -- V
CB
CB
3
2
3
f=1MHz
f=1MHz
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
3
5
3
5
3
3
5
3
5
3
7
2
7
2
7
2
7
2
7
1.0
2
7
2
0.1
1.0
0.1
10
10
Collector-to-Base Voltage, V
-- V ITR07921
Collector-to-Base Voltage, V
-- V ITR07922
CB
CB
No. A1062-2/6
2SC5226A
2
S21e
-- I
NF -- I
C
⏐
⏐
C
12
10
8
14
12
10
f=1GHz
V
=5V
CE
f=1GHz
8
6
6
4
4
2
2
0
0
3
5
7
2
3
5
7
2
3
5
7
2
3
5
3
5
3
5
7
2
7
2
7
2
1.0
1.0
10
100
ITR07924
10
100
Collector Current, I -- mA
Collector Current, I -- mA
ITR07923
C
C
P
-- Ta
C
160
150
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR07925
No. A1062-3/6
2SC5226A
S Parameters
f=100MHz, 200MHz to 2000MHz(200MHz Step)
f=100MHz, 200MHz to 2000MHz(200MHz Step)
90°
=5V
j50
60°
V
120°
CE
I =20mA
j25
j100
C
j150
j200
j250
150°
0.1GHz
30°
V
=2V
CE
I =3mA
j10
C
2.0GHz
0.1GHz
2.0GHz
2.0GHz
2.0GHz
2.0GHz
2.0GHz
12
20
16
25
100
4
8
50
10
150
250
180°
0
0
V
=5V
CE
V
=2V
I =3mA
C
I =20mA
CE
C
V
=5V
I =7mA
CE
C
0.1GHz
--j250
--j200
--j10
--30°
--150°
--j150
0.1GHz
--j100
--j25
--60°
--120°
--j50
--90°
ITR07926
ITR07927
f=100MHz, 200MHz to 2000MHz(200MHz Step)
f=100MHz, 200MHz to 2000MHz(200MHz Step)
90°
j50
2.0GHz
120°
60°
2.0GHz
j25
j100
=5V
CE
C
V
I =20mA
2.0GHz
=2V
j150
150°
V
j200
j250
30°
CE
I =3mA
j10
C
V
=5V
CE
0.1GHz
0.1GHz
0.1GHz
I =7mA
C
250
0.04
10
25
100
0.08 0.12 0.16
50
150
=5V
180°
0.2 0
0
V
CE
I =20mA
C
--j250
--j200
--j10
2.0GHz
V
=2V
CE
I =3mA
--30°
--150°
--j150
C
--j100
--j25
--60°
--120°
--j50
--90°
ITR07928
ITR07929
No. A1062-4/6
2SC5226A
S Parameters (Common emitter)
V
V
V
=5V, I =7mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--46.0
--80.9
--121.3
--143.5
--157.6
--167.5
--176.1
176.6
S
∠S21
148.5
127.3
105.0
92.8
84.3
77.0
70.3
64.5
57.4
54.2
49.2
S
∠S12
68.5
57.1
51.3
52.9
55.4
56.8
57.9
58.4
58.9
58.6
58.1
S
⏐
22
∠S22
--23.6
--37.6
--47.6
--50.5
--51.8
--53.4
--55.8
--58.3
--62.0
--65.0
--68.1
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.720
0.612
0.497
0.456
0.440
0.436
0.434
0.433
0.433
0.434
0.439
17.973
13.927
8.656
6.080
4.725
3.864
3.258
2.847
2.329
2.252
2.057
0.030
0.047
0.066
0.079
0.094
0.110
0.126
0.143
0.160
0.178
0.197
0.880
0.697
0.479
0.382
0.339
0.323
0.312
0.304
0.296
0.293
0.294
200
400
600
800
1000
1200
1400
1600
1800
2000
170.9
165.0
159.6
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--78.8
--119.2
--151.6
--166.4
--175.9
178.2
172.1
166.7
162.1
156.7
152.1
S
∠S21
132.9
112.2
95.4
86.6
80.1
74.1
68.5
63.6
58.8
54.3
50.1
S
∠S12
63.9
60.8
64.7
67.2
68.4
67.8
66.8
65.6
64.0
62.4
60.6
S
⏐ ⏐
22
∠S22
--38.2
--51.1
--55.3
--56.1
--56.6
--57.9
--60.7
--63.5
--67.9
--71.2
--74.2
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.481
0.420
0.391
0.386
0.381
0.382
0.385
0.388
0.390
0.391
0.394
29.795
19.008
10.416
7.084
5.407
4.401
3.701
3.217
2.839
2.534
2.319
0.022
0.033
0.052
0.071
0.092
0.114
0.134
0.156
0.176
0.197
0.219
0.707
0.470
0.296
0.236
0.213
0.208
0.204
0.202
0.199
0.197
0.197
200
400
600
800
1000
1200
1400
1600
1800
2000
=2V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--32.4
S
∠S21
157.2
138.5
113.8
98.4
87.7
78.5
70.5
63.5
57.1
51.7
45.9
S
∠S12
72.6
59.2
44.5
39.1
38.0
38.6
40.3
42.5
45.0
47.3
49.2
S
⏐
22
∠S22
--16.5
--29.3
--43.2
--50.0
--53.8
--57.1
--60.3
--63.8
--68.0
--72.0
--75.8
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.858
0.782
0.653
0.588
0.557
0.543
0.536
0.533
0.527
0.525
0.528
9.413
8.187
5.855
4.337
3.444
2.871
2.446
2.145
1.904
1.714
1.564
0.040
0.070
0.101
0.114
0.122
0.130
0.137
0.146
0.155
0.168
0.183
0.945
0.833
0.637
0.515
0.454
0.426
0.407
0.393
0.382
0.379
0.378
200
--60.7
400
--101.1
--126.5
--143.7
--156.3
--166.8
--175.5
177.0
600
800
1000
1200
1400
1600
1800
2000
170.3
163.8
No. A1062-5/6
2SC5226A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PSNo. A1062-6/6
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