2SC3149-M [ONSEMI]
Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN;
| 型号： | 2SC3149-M |
| 厂家： | 
ONSEMI |
| 描述： | Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN1068C
NPN Triple Diffused Planar Silicon Transistor
2SC3149
800V/1.5A Switching Regulator Applications
Features
Package Dimensions
unit:mm
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
≥900V).
CBO
2010C
[2SC3149]
1 : Base
JEDEC : TO-220AB
EIAJ : SC-46
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
900
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
800
V
CEO
V
7
V
EBO
I
1.5
A
C
Collector Current (Pulse)
Base Current
I
PW≤300µs, Duty Cycle≤10%
5
A
CP
I
0.8
40
A
B
Collector Dissipation
Junction Temperature
Storage Temperature
P
W
˚C
˚C
Tc=25˚C
C
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
10
Collector Cutoff Current
I
V
V
V
V
V
V
=800V, I =0
E
µA
µA
CBO
CB
EB
CE
CE
CE
CB
Emitter Cutoff Current
DC Current Gain
I
=5V, I =0
10
EBO
C
h
h
1
=5V, I =0.1A
C
=5V, I =0.5A
C
=10V, I =0.1A
C
=10V, f=1MHz
10*
40*
FE
FE
2
8
Gain-Bandwidth Product
Output Capacitance
f
15
30
MHz
pF
T
C
ob
* : The h 1 of the 2SC3149 is classified as follows. When specifying the h 1 rank, specify two ranks or more in principle.
FE
FE
10
K
20
15
L
30
20
M
40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/5137KI/2125MW, TS No.1068–1/4
2SC3149
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
2.0
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
V
I
I
I
I
=0.75A, I =0.15A
B
=0.75A, I =0.15A
B
V
V
V
V
V
V
V
CE(sat)
BE(sat)
C
C
C
C
V
1.5
V
V
V
V
=1mA, I =0
E
900
(BR)CBO
(BR)CEO
(BR)EBO
=5mA, R =∞
800
7
BE
I =1mA, I =0
E
C
C
C
C
I
I
I
=1.5A, L=1mH, I =0.5A
800
800
CEO(sus)
CEX(sus)1
CEX(sus)2
B
V
V
=0.5A, I =0.1A, I =–0.1A, L=5mH, clamped
B1
B2
=0.25A, I =0.05A, I =–0.05A, L=10mH,
B1 B2
900
V
clamped
Turn-ON Time
Storage Time
Fall Time
t
I
I
I
=1A, I =0.2A, I =–0.4A, R =400Ω, V =400V
B1 B2 CC
1.0
3.0
0.7
µs
µs
µs
on
C
C
C
L
t
=1A, I =0.2A, I =–0.4A, R =400Ω, V =400V
B1 B2 CC
stg
L
t
f
=1A, I =0.2A, I =–0.4A, R =400Ω, V =400V
B1 B2 CC
L
Switching Time Test Circuit
No.1068–2/4
2SC3149
No.1068–3/4
2SC3149
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1998. Specifications and information herein are subject
to change without notice.
PS No.1068–4/4
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