2SB1122T-TD-E [ONSEMI]
双极晶体管，-50V，-1A，低饱和压，PNP 单 PCP;
| 型号： | 2SB1122T-TD-E |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，-50V，-1A，低饱和压，PNP 单 PCP PC 晶体管 |
| 文件： | 总4页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2040C
2SB1122
Bipolar Transistor
http://onsemi.com
–
–
( )
sat PNP Single PCP
50V, 1A, Low V
CE
Applicaitons
•
Voltage regulators relay drivers, lamp drivers, electrical equipment
Features
•
Adoption of FBET process
•
Ultrasmall size making it easy to provide high-density hybrid IC’s
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Conditions
Ratings
--60
--50
-- 5
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
-- 1
A
Collector Current (Pulse)
I
CP
-- 2
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SB1122S-TD-E
2SB1122T-TD-E
4.5
1.6
Packing Type: TD
Marking
1.5
TD
RANK
1
2
3
0.4
0.5
0.4
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/4
2SB1122
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
Conditions
Ratings
Unit
W
P
When mounted on ceramic substrate (250mm2 0.8mm)
1.3
×
C
Tj
150
C
°
°
Tstg
--55 to +150
C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
V
=--50V, I =0A
--100
--100
400*
nA
nA
CBO
CB
V =--4V, I =0A
EB
E
I
EBO
C
h
h
1
2
V
CE
=--2V, I =--100mA
140*
FE
FE
C
DC Current Gain
V
CE
=--2V, I =--1A
30
C
Gain-Bandwidth Product
Output Capacitance
f
V
=--10V, I =--50mA
150
12
MHz
pF
mV
V
T
CE C
Cob
V
CB
=--10V, f=1MHz
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
V
(sat)
(sat)
I
C
=--500mA, I =--50mA
--180
--0.9
--500
--1.2
CE
B
V
I =--500mA, I =--50mA
C B
BE
V
I
C
=--10 A, I =0A
--60
--50
--5
V
μ
(BR)CBO
E
V
I
C
=--1mA, R
=
V
∞
(BR)CEO
BE
V
I =--10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
40
300
30
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
: 2SB1122 is classified by 100mA h as follows :
*
FE
Rank
S
T
h
140 to 280
200 to 400
FE
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
I
B2
OUTPUT
INPUT
R
V
B
R
R
L
50Ω
50Ω
+
+
100μF
470μF
V
=5V
V
= --25V
CC
BE
I =10I = --10I = --500mA
C B1 B2
Ordering Information
Device
2SB1122S-TD-E
2SB1122T-TD-E
Package
PCP
Shipping
memo
1,000pcs./reel
1,000pcs./reel
Pb Free
PCP
I
-- V
I -- V
C BE
C
CE
--1200
--1000
--800
--600
--400
--200
--1.0
--0.8
--0.6
--0.4
V
= --2V
CE
--1mA
--0.2
0
I =0mA
B
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
--1
--2
--3
--4
--5
Collector to Emitter Voltage, V
-- V ITR08877
Base to Emitter Voltage, V
-- V
ITR08879
CE
BE
No.2040-2/4
2SB1122
h
-- I
f
-- I
FE
C
T
C
5
1000
V
= --10V
V
= --2V
CE
CE
7
5
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
7
10
5
5
5
5
0
7
2
3
5
7
2
3
5
7
2
3
5
5
5
7
2
3
5
7
2
3
5
--10
--100
--1000
--10
--100
C
ITR08883
ITR08881
Collector Current, I -- mA
Collector Current, I -- mA
C
Cob -- V
V
(sat) -- I
C
CB
CE
5
--1000
f=1MHz
I
/ I =10
B
C
7
5
3
2
3
2
10
--100
7
5
7
5
C
°
-25
-
3
2
3
2
--10
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
--10
--100
--1000
ITR08885
--1.0
--10
--100
-- V ITR08884
Collector to Base Voltage, V
Collector Current, I -- mA
CB
C
V
(sat) -- I
C
S O A
BE
3
2
--10
I
= --2A
I
/ I =10
B
CP
C
7
5
I = --1A
C
--1.0
7
5
3
2
3
2
--1.0
--0.1
7
5
7
5
3
2
3
2
Ta=25°C Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
--0.01
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
--100
--10
--100
--1000
ITR08887
--1.0
--10
Collector Current, I -- mA
Collector to Emitter Voltage, V -- V ITR08889
C
CE
P
-- Ta
C
1.4
1.3
1.2
1.0
0.8
0.6
0.5
0.4
0.2
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR08890
No.2040-3/4
2SB1122
Outline Drawing
Land Pattern Example
2SB1122S-TD-E, 2SB1122T-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.2040-4/4
相关型号：
2SB1122_11
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications
SANYO
©2020 ICPDF网 联系我们和版权申明