2SA2153 [ONSEMI]
Bipolar Transistor;
| 型号： | 2SA2153 |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor |
| 文件： | 总5页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA2153
Bipolar Transistor
−50V, −2A, Low VCE(sat), PNP Single
www.onsemi.com
Features
• Adoption of MBIT Process
• Low Saturation Voltage
• Large Current Capacity and Wide ASO
ELECTRICAL CONNECTION
2
Typical Applications
• Voltage Regulators
• Relay Drivers
1 : Base
1
2 : Collector
3 : Emitter
• Lamp Drivers
• Electrical Equipment
3
SPECIFICATIONS
MARKING
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
Unit
V
V
−50
−50
−6
−2
−4
CBO
CEO
EBO
V
V
V
1
2
V
3
I
I
I
A
C
SOT-89 / PCP-1
Collector Current (Pulse)
Base Current
A
CP
B
3
2
1
−400
1.3
mA
W
W
°C
°C
(Note 2)
Collector Dissipation
P
C
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
Tc=25°C
3.5
Junction Temperature
Storage Temperature
Tj
150
Tstg
−55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(450mm2
× 0.8mm)
© Semiconductor Components Industries, LLC, 2016
April 2016 - Rev. 2
1
Publication Order Number :
2SA2153/D
2SA2153
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3)
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
V
=−40V, I =0A
−1
−1
μA
μA
CBO
EBO
CB
EB
CE
CE
CE
CB
E
=−4V, I =0A
C
h
h
1
2
=−2V, I =−100mA
200
560
FE
FE
C
DC Current Gain
=−2V,I =−1.5A
40
C
Gain-Bandwidth Product
Output Capacitance
f
=−10V, I =−300mA
420
MHz
pF
T
C
Cob
=−10V, f=1MHz
16
−0.2
−0.9
Collector to Emitter Saturation
Voltage
V
V
V
(sat)
I =−1A, I =−50mA
C
−0.4
−1.2
V
V
V
CE
BE
B
Base to Emitter Saturation Voltage
(sat)
I =−1A, I =−50mA
C B
Collector to Base Breakdown
Voltage
I =−10μA, I =0A
C
−50
(BR)CBO
E
Collector to Emitter Breakdown
Voltage
V
V
I =−1mA, R =∞
BE
−50
−6
V
(BR)CEO
(BR)EBO
C
Emitter to Base Breakdown Voltage
Turn-On Time
I =−10μA, I =0A
V
E
C
35
200
24
t
t
t
ns
ns
ns
on
See specified Test
Circuit
Storage Time
stg
Fall Time
f
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
www.onsemi.com
2
2SA2153
www.onsemi.com
3
2SA2153
www.onsemi.com
4
2SA2153
PACKAGE DIMENSIONS
unit : mm
SOT-89 / PCP-1
CASE 419AU
ISSUE O
1 : Base
2 : Collector
3 : Emitter
Recommended
Soldering Footprint
2.2
45°
45°
1.0
1.0
1.5
3.0
ORDERING INFORMATION
Device
Marking
AZ
Package
Shipping (Qty / Packing)
1,000 / Tape & Reel
SOT-89 / PCP-1
(Pb-Free)
2SA2153-TD-E
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5
相关型号：
2SA2154-GR
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
2SA2154CT-GR
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
2SA2154CT-GR(L3A,E
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
TOSHIBA
©2020 ICPDF网 联系我们和版权申明