2SA1289-R [ONSEMI]
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN;
| 型号： | 2SA1289-R |
| 厂家： | 
ONSEMI |
| 描述： | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN1199E
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
60V / 5A High-Speed Switching
Applications
2SA1289 / 2SC3253
Applications
•
Various inductance lamp drivers for electrical equipment.
Inverters, converters (flash, fluorescent lamp lighting circuit).
Power amp (high power car stereo, motor controller).
High-speed switching (switching regulator, driver).
•
•
•
Features
• Low saturation voltage.
• Excellent current dependence of h
• Short switching time.
.
FE
Specifications ( ) : 2SA1289
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(--)80
(--)60
(--)5
(--)5
(--)7
1.75
30
V
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
=(--)40V, I =0A
Unit
min
max
I
V
CB
V
EB
V
CE
(--)0.1
(--)0.1
280*
mA
mA
CBO
E
Emitter Cutoff Current
DC Current Gain
I
=(--)4V, I =0A
C
EBO
h
FE
=(--)2V, I =(--)1A
70*
C
Continued on next page.
* : The 2SA1289/2SC3253 are classified by 1A h as follows :
FE
Rank
Q
R
S
h
70 to 140
100 to 200
140 to 280
FE
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM TC-00000109 / 72006FA MS IM TC-00000062 / 73102TN (KT) / 71598HA (KT) / D051MH (KOTO)
No.1199-1/4
2SA1289 / 2SC3253
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
f
V
=(--)5V, I =(--)1A
100
MHz
V
T
CE
C
V
(sat)
I
C
I
C
I
C
=(--)2.5A, I =(--)0.125A
(--)0.4
CE
B
V
V
V
=(--)1mA, I =0A
(--)80
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
(--)60
(--)5
V
I =(--)1mA, I =0A
E
V
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.1
0.5
0.1
µs
µs
µs
on
Storage Time
t
stg
Fall Time
t
f
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7507-001
I
B1
PW=20µs
D.C.≤1%
OUTPUT
R
B
4.5
10.2
INPUT
3.6
5.1
1.3
I
R
B2
L
V
10Ω
R
50Ω
+
+
100µF
= --5V
470µF
V
V
=20V
CC
BE
1.2
0.8
20I = --20I =I =2A
B1 B2
For PNP, the polarity is reversed.
C
0.4
1
2
3
1 : Base
2 : Collector
3 : Emitter
2.55
2.55
SANYO : TO-220
I
-- V
I
-- V
BE
C
BE
C
6
5
4
3
2
--
--
--
--
--
--
6
5
4
3
2
2SC3253
2SA1289
= --2V
V
=2V
V
CE
CE
1
0
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03172
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V -- V
BE
ITR03171
No.1199-2/4
2SA1289 / 2SC3253
h
FE
-- I
h
FE
-- I
C
C
--1000
1000
2SC3253
2SA1289
7
7
V
CE
=2V
V
CE
= --2V
5
5
°C
Ta=120
3
2
3
2
°C
Ta=120
25
°
C
25
°
C
--40
°
C
100
100
--40
°
C
7
5
7
5
3
2
3
2
10
10
7
7
5
5
3
3
7 --0.1
7--1.0
7 --10
ITR03173
0.01
0.1
1.0
10
2
3
5
2
3
5
2
3
5
2
2
3
5
7
2
3
5
7
2
3
5
7
2
--0.01
ITR03174
Collector Current, I -- A
Collector Current, I -- A
C
C
f
-- I
f
-- I
T C
T
C
2
2
2SA1289
2SC3253
V
CE
= --5V
V
CE
=5V
100
100
7
5
7
5
3
2
3
2
10
10
7
5
7
5
5
2
3
5
2
3
5
2
3
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
7
7--0.01
7--0.1
7--1.0
--10
ITR03175
0.01
0.1
1.0
10
ITR03176
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
CE
C
CE
C
100
--100
2SC3253
/ I =20
7
5
3
2
2SA1289
/ I =20
7
5
3
2
I
I
C
B
C
B
10
--10
7
5
3
2
7
5
3
2
1.0
7
5
--1.0
7
5
3
2
3
2
0.1
7
5
--0.1
7
5
3
2
3
2
--0.01
--0.01
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.1
--1.0
--10
ITR03177
0.1
1.0
10
ITR03178
Collector Current, I -- A
Collector Current, I -- A
C
C
A S O
A S O
--10
10
I
=7A
I
= --7A
2SA1289
2SC3253
CP
CP
7
5
7
5
I =5A
I = --5A
C
C
3
2
3
2
--1.0
1.0
7
7
5
5
3
2
3
2
--0.1
0.1
Tc=25°C
Single Pulse
Tc=25°C
Single Pulse
7
5
7
5
2
2
2
2
3
5
7
3
5
7
3
5
7
3
5
7
--10
--100
10
100
Collector-to-Emitter Voltage, V
CE
-- V ITR03179
Collector-to-Emitter Voltage, V
CE
-- V ITR03180
No.1199-3/4
2SA1289 / 2SC3253
P
-- Ta
P
-- Tc
C
C
2.0
40
2SA1289 / 2SC3253
2SA1289 / 2SC3253
1.75
30
1.5
1.0
20
10
0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR03181
ITR03182
Case Temperature, Tc -- °C
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No.1199-4/4
相关型号：
2SA1289-S
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ONSEMI
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