2N6344 [ONSEMI]
Silicon Bidirectional Thyristors; 硅双向晶闸管
| 型号： | 2N6344 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Bidirectional Thyristors |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
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TRIACS
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
8 AMPERES RMS
600 thru 800 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
MT2
MT1
G
• Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = –40 to +110°C, Sine Wave 50 to
V
RRM
J
60 Hz, Gate Open)
2N6344
2N6349
600
800
1
2
3
*On–State RMS Current
I
Amps
Amps
T(RMS)
(T = +80°C)
8.0
C
TO–220AB
CASE 221A
STYLE 4
Full Cycle Sine Wave 50 to 60 Hz
(T = +90°C)
C
4.0
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
I
100
TSM
PIN ASSIGNMENT
T
C
= +25°C)
1
2
3
4
Main Terminal 1
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
*Peak Gate Power
Main Terminal 2
Gate
2
I t
2
A s
40
20
P
GM
Watts
Watt
Amps
Volts
°C
Main Terminal 2
(T = +80°C, Pulse Width = 2 µs)
C
*Average Gate Power
(T = +80°C, t = 8.3 ms)
C
P
0.5
2.0
10
G(AV)
ORDERING INFORMATION
*Peak Gate Current
(T = +80°C, Pulse Width = 2.0 µs)
C
I
GM
Device
2N6344
2N6349
Package
TO220AB
TO220AB
Shipping
500/Box
500/Box
*Peak Gate Voltage
(T = +80°C, Pulse Width = 2.0 µs)
C
V
GM
*Operating Junction Temperature Range
*Storage Temperature Range
T
J
–40 to
+125
Preferred devices are recommended choices for future use
and best overall value.
T
stg
–40 to
+150
°C
(1) V
DRM
and V for all types can be applied on a continuous basis. Blocking
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
March, 2000 – Rev. 1
2N6344/D
2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Max
2.2
Unit
°C/W
°C
R
θJC
T
L
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V = Rated V , V ; Gate Open)
I
,
DRM
T = 25°C
T = 100°C
J
I
RRM
—
—
—
—
10
2.0
µA
mA
D
DRM RRM
J
ON CHARACTERISTICS
*Peak On–State Voltage
V
—
1.3
1.55
Volts
mA
TM
(I
TM
=
11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
Gate Trigger Current (Continuous dc)
I
GT
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) T = –40°C
*MT2(+), G(–); MT2(–), G(+) T = –40°C
C
C
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 100 Ohms)
D
L
MT2(+), G(+)
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
2.0
2.5
2.0
2.5
2.5
3.0
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
*MT2(+), G(+); MT2(–), G(–) T = –40°C
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C
—
C
Gate Non–Trigger Voltage (Continuous dc)
V
Volts
mA
µs
GD
(V = Rated V
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(–)
, R = 10 k Ohms, T = 100°C)
L J
D
DRM
0.2
—
—
*Holding Current
(V = 12 Vdc, Gate Open)
D
(Initiating Current = 200 mA)
I
H
T
= 25°C
—
—
6.0
—
40
75
C
C
*T = –40°C
* Turn-On Time
t
—
—
1.5
5.0
2.0
—
gt
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 11 A, I
= 120 mA,
GT
D
DRM TM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
V/µs
(V = Rated V
Gate Unenergized, T = 80°C)
, I = 11 A, Commutating di/dt = 4.0 A/ms,
D
DRM TM
C
*Indicates JEDEC Registered Data.
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2
2N6344, 2N6349
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
I
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
on state
I
H
DRM
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
MainTerminal 2 –
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(–) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
–
+ I
GT
GT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) I
GATE
(–) I
GATE
GT
GT
MT1
REF
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3
2N6344, 2N6349
100
96
10
dc
α = 180°
α = 30°
60°
α
8.0
120°
α
90°
90°
α = CONDUCTION ANGLE
120°
6.0
4.0
2.0
92
60°
T
100°C
J
30°
180°
α
88
α
84
80
α = CONDUCTION ANGLE
dc
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT, (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
1.8
1.6
1.4
1.2
50
OFF-STATE VOLTAGE = 12 V
QUADRANT 4
OFF-STATE VOLTAGE = 12 V
30
20
1.0
0.8
1
2
10
1
2
QUADRANT
QUADRANTS
3
4
0.6
0.4
7.0
5.0
3
–60 –40 –20
0
20
40
60
80 100 120 140
–60 –40 –20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
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4
2N6344, 2N6349
20
100
70
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
10
30
20
7.0
5.0
MAIN TERMINAL #2
POSITIVE
T = 100°C
J
25°C
3.0
2.0
10
7.0
5.0
–60 –40 –20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Holding Current
3.0
2.0
100
80
1.0
0.7
0.5
60
CYCLE
40
0.3
0.2
T = 100°C
J
20
0
f = 60 Hz
Surge is preceded and followed by rated current
0.1
0.4
0.8 1.2
1.6
2.0
2.4 2.8
3.2 3.6 4.0 4.4
1.0
2.0
3.0
5.0
7.0
10
v , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TM
NUMBER OF CYCLES
Figure 7. Maximum Non–Repetitive
Surge Current
Figure 5. On–State Characteristics
1.0
0.5
0.2
0.1
Z
θJC(t)
= r(t) • R
θJC
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k 10 k
t,TIME (ms)
Figure 8. Typical Thermal Response
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5
2N6344, 2N6349
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
U
V
Z
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
R
J
L
V
G
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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6
2N6344, 2N6349
Notes
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7
2N6344, 2N6349
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2N6344/D
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