2N6344_06 [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | 2N6344_06 |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6344
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
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TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
Features
• Blocking Voltage to 800 V
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Pb−Free Package is Available*
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
4
†Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
(T = −40 to +110°C, Sine Wave
J
50 to 60 Hz, Gate Open)
2N6344
2N6349
600
800
2N6344G
AYWW
TO−220AB
CASE 221A
STYLE 4
†On−State RMS Current (T = +80°C) Full
I
8.0
4.0
A
A
C
T(RMS)
Cycle Sine Wave 50 to 60 Hz (T = +90°C)
1
C
2
3
†Peak Non−Repetitive Surge Current (One
I
100
TSM
Full Cycle, Sine Wave 60 Hz, T = +25°C)
C
Preceded and followed by rated current
Circuit Fusing Consideration (t = 8.3 ms)
†Peak Gate Power
A
Y
= Assembly Location
= Year
2
2
I t
40
20
A s
WW = Work Week
G
P
W
W
A
GM
(T = +80°C, Pulse Width = 2 ms)
C
= Pb−Free Package
†Average Gate Power
(T = +80°C, t = 8.3 ms)
C
P
0.5
2.0
10
G(AV)
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
†Peak Gate Current
(T = +80°C, Pulse Width = 2.0 ms)
C
I
GM
1
2
3
4
†Peak Gate Voltage
(T = +80°C, Pulse Width = 2.0 ms)
C
V
V
GM
†Operating Junction Temperature Range
Storage Temperature Range
T
J
−40 to +125 °C
−40 to +150 °C
Main Terminal 2
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
Package
Shipping
2N6344
TO−220AB
500 Units / Box
500 Units / Box
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2N6344G
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 4
2N6344/D
2N6344
THERMAL CHARACTERISTICS
Characteristic
†Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Sec
Symbol
Max
2.2
Unit
°C/W
°C
R
q
JC
L
T
260
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
†Peak Repetitive Blocking Current
I
I
,
DRM
(V = Rated V
, V
RRM
; Gate Open)
D
DRM
RRM
−
−
−
−
10
mA
T = 25°C
J
J
2.0
mA
T = 100°C
ON CHARACTERISTICS
†Peak On−State Voltage
V
TM
−
1.3
1.55
V
(I = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
TM
Gate Trigger Current (Continuous dc) (V = 12 Vdc, R = 100 W)
I
mA
D
L
GT
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G(−)
Quadrant III: MT2(−), G(−)
Quadrant IV: MT2(−), G(+)
Both
2N6349 only
Both
−
−
−
−
−
−
12
12
20
35
−
50
75
50
2N6349 only
75
†MT2(+), G(+); MT2(−), G(−) T = −40°C
†MT2(+), G(−); MT2(−), G(+) T = −40°C
100
125
C
−
C
Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 W)
V
GT
V
D
L
Quadrant I: MT2(+), G(+)
Quadrant II: MT2(+), G(−)
Quadrant III: MT2(−), G(−)
Quadrant IV: MT2(−), G(+)
Both
2N6349 only
Both
−
−
−
−
−
−
0.9
0.9
1.1
1.4
−
2.0
2.5
2.0
2.5
2.5
3.0
2N6349 only
†MT2(+), G(+); MT2(−), G(−) T = −40°C
†MT2(+), G(−); MT2(−), G(+) T = −40°C
C
−
C
Gate Non−Trigger Voltage (Continuous dc)
V
GD
V
(V = Rated V
, R = 10 k W, T = 100°C)
D
DRM
L J
†MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−)
0.2
−
−
†Holding Current (V = 12 Vdc, Gate Open)
(Initiating Current = "200 mA)
T
= 25°C
I
H
−
−
6.0
−
40
75
mA
D
C
*T = −40°C
C
†Turn-On Time
t
gt
−
1.5
2.0
ms
(V = Rated V
, I = 11 A, I = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
DRM TM GT
D
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
−
5.0
−
V/ms
(V = Rated V
, I = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, T = 80°C)
D
DRM TM
C
†Indicates JEDEC Registered Data.
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2
2N6344
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
H
I
at V
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
2N6349
only
Both
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
2N6349
only
Both
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
2N6344
100
96
10
dc
α = 180°
α = 30°
60°
α
8.0
120°
α
90°
90°
α = CONDUCTION ANGLE
120°
6.0
4.0
2.0
92
60°
T [ 100°C
J
30°
180°
α
88
α
84
80
α = CONDUCTION ANGLE
dc
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT, (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
1.8
1.6
1.4
1.2
50
OFF-STATE VOLTAGE = 12 V
QUADRANT 4
OFF-STATE VOLTAGE = 12 V
30
20
1.0
0.8
1
2
10
1
2
QUADRANT
QUADRANTS
3
4
0.6
0.4
7.0
5.0
3
−60 −40 −20
0
20
40
60
80
100 120 140
−60 −40 −20
0
20
40
60
80 100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
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4
2N6344
20
100
70
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
10
30
20
7.0
5.0
MAIN TERMINAL #2
POSITIVE
T = 100°C
J
25°C
3.0
2.0
10
7.0
5.0
−60 −40 −20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Typical Holding Current
3.0
2.0
100
80
1.0
0.7
0.5
60
40
CYCLE
0.3
0.2
T = 100°C
J
f = 60 Hz
20
0
Surge is preceded and followed by rated current
0.1
0.4
0.8 1.2
1.6
2.0
2.4
2.8
3.2 3.6 4.0 4.4
1.0
2.0
3.0
5.0
7.0
10
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
TM
Figure 7. Maximum Non−Repetitive
Surge Current
Figure 5. On−State Characteristics
1.0
0.5
0.2
0.1
Z
= r(t) • R
q
q
JC
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
t,TIME (ms)
50
100
200
500
1.0 k
2.0 k
5.0 k 10 k
Figure 8. Typical Thermal Response
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5
2N6344
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
N
0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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2N6344/D
相关型号：
2N6345
Triac; Max Peak Repetitive Reverse Voltage: 8; Max TMS Bridge Input Voltage: 100; Max DC Reverse Voltage: 2
DIGITRON
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