2N6071B [ONSEMI]
Sensitive Gate Triacs; 敏感的双向可控硅门型号: | 2N6071B |
厂家: | ONSEMI |
描述: | Sensitive Gate Triacs |
文件: | 总8页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
http://onsemi.com
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off-State Voltage
V
Volts
DRM,
(T = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
V
RRM
J
200
400
600
2N6073A,B
2N6075A,B
3
2
1
*On-State RMS Current (T = 85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
4.0
Amps
Amps
C
T(RMS)
TO–225AA
(formerly TO–126)
CASE 077
*Peak Non–repetitive Surge Current
I
30
TSM
(One Full cycle, 60 Hz, T = +110°C)
J
STYLE 5
2
2
Circuit Fusing Considerations
(t = 8.3 ms)
I t
3.7
10
A s
PIN ASSIGNMENT
*Peak Gate Power
P
Watts
Watt
Volts
°C
GM
1
2
3
Main Terminal 1
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
Main Terminal 2
Gate
*Average Gate Power
P
0.5
5.0
G(AV)
(t = 8.3 ms, T = 85°C)
C
*Peak Gate Voltage
V
GM
(Pulse Width ≤ 1.0 µs, T = 85°C)
C
ORDERING INFORMATION
*Operating Junction Temperature Range
T
J
–40 to
+110
Device
2N6071A
2N6071B
2N6073A
2N6073B
Package
TO225AA
TO225AA
TO225AA
TO225AA
Shipping
500/Box
500/Box
500/Box
500/Box
*Storage Temperature Range
T
–40 to
+150
°C
stg
(2)
Mounting Torque (6-32 Screw)
—
8.0
in. lb.
*Indicates JEDEC Registered Data.
(1) V and V for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
DRM RRM
2N6075A
2N6075B
TO225AA
TO225AA
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
May, 2000 – Rev. 3
2N6071/D
2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
3.5
°C/W
θJC
θJA
R
75
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V = Rated V , V Gate Open)
I
DRM,
RRM
T = 25°C
T = 110°C
J
I
—
—
—
—
10
2
µA
mA
D
DRM RRM;
J
ON CHARACTERISTICS
(1)
*Peak On-State Voltage
V
V
—
—
2
Volts
Volts
TM
(I 6 A Peak)
=
TM
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms, T = –40°C)
GT
L
J
All Quadrants
—
1.4
—
2.5
—
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, R = 100 Ohms, T = 110°C)
All Quadrants
V
GD
Volts
mA
L
J
0.2
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 1 Adc)
I
H
(T = –40°C)
(T = 25°C)
J
—
—
—
—
30
15
J
Turn-On Time
t
gt
—
1.5
—
µs
(I
TM
= 14 Adc, I
= 100 mAdc)
GT
QUADRANT
(Maximum Value)
I
I
II
mA
III
mA
IV
mA
GT
J
Type
@ T
mA
+25°C
–40°C
+25°C
–40°C
5
20
3
5
20
3
5
20
3
10
30
5
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, R = 100 ohms)
L
2N6071A
2N6073A
2N6075A
2N6071B
2N6073B
2N6075B
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
—
5
—
V/µs
@ V
, T = 85°C, Gate Open, I
= 5.7 A, Exponential Waveform,
TM
DRM
J
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
2N6071A/B Series
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
0 V
MC7400
LOAD
4
2N6071A
510
Ω
7
115 VAC
60 Hz
–V
EE
V
EE
= 5.0 V
+
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
I
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
on state
I
H
DRM
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
MainTerminal 2 –
V
TM
http://onsemi.com
3
2N6071A/B Series
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(–) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
–
+ I
GT
GT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) I
GATE
(–) I
GATE
GT
GT
MT1
REF
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
SENSITIVE GATE LOGIC REFERENCE
Firing Quadrant
IC Logic
Functions
I
II
III
IV
TTL
2N6071A
Series
2N6071A
Series
HTL
2N6071A
Series
2N6071A
Series
CMOS (NAND)
CMOS (Buffer)
2N6071B
Series
2N6071B
Series
2N6071B
Series
2N6071B
Series
Operational
Amplifier
2N6071A
Series
2N6071A
Series
Zero Voltage
Switch
2N6071A
Series
2N6071A
Series
http://onsemi.com
4
2N6071A/B Series
110
100
90
110
α = 30°
60°
90°
100
90
α = 30°
60°
120°
90°
120°
180°
180°
dc
a
a
dc
80
70
80
70
α
a
α = CONDUCTION ANGLE
1.0
, AVERAGE ON-STATE CURRENT (AMP)
α = CONDUCTION ANGLE
1.0
0
2.0
3.0
4.0
0
2.0
3.0
4.0
I
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
T(AV)
Figure 1. Average Current Derating
Figure 2. RMS Current Derating
8.0
8.0
6.0
a
a
dc
180°
a
a
dc
120°
6.0
4.0
2.0
0
α = 180°
α = CONDUCTION ANGLE
90°
α = CONDUCTION ANGLE
120°
60°
4.0
2.0
0
α = 30°
30°
60°
90°
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
I
, AVERAGE ON-STATE CURRENT (AMP)
I , RMS ON-STATE CURRENT (AMP)
T(RMS)
T(AV)
Figure 3. Power Dissipation
Figure 4. Power Dissipation
3.0
2.0
3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.3
–60 –40 –20
0
20
40
60
80
100 120 140
–60 –40 –20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate–Trigger Voltage
Figure 6. Typical Gate–Trigger Current
http://onsemi.com
5
2N6071A/B Series
40
30
3.0
2.0
GATE OPEN
APPLIES TO EITHER DIRECTION
20
1.0
10
0.7
0.5
7.0
5.0
0.3
–60 –40 –20
0
20
40
60
80
100 120 140
T
J
= 110°C
3.0
2.0
T , JUNCTION TEMPERATURE (°C)
J
Figure 8. Typical Holding Current
T
J
= 25°C
1.0
0.7
0.5
34
32
30
28
26
24
0.3
0.2
T = –40 to +110°C
J
22
20
18
f = 60 Hz
16
14
1.0
0.1
2.0
3.0
4.0 5.0
7.0
10
0
1.0
2.0
3.0
4.0
5.0
NUMBER OF FULL CYCLES
V , ON-STATE VOLTAGE (VOLTS)
TM
Figure 7. Maximum On–State Characteristics
Figure 9. Maximum Allowable Surge Current
10
5.0
MAXIMUM
TYPICAL
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k 10 k
Figure 10. Thermal Response
http://onsemi.com
6
2N6071A/B Series
PACKAGE DIMENSIONS
TO–225AA
(formerly TO–126)
CASE 077–09
ISSUE W
–B–
NOTES:
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
INCHES
DIM MIN MAX
0.435 10.80
MILLIMETERS
–A–
MIN
MAX
11.04
7.74
2.66
0.66
3.30
1
2 3
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.305
0.105
0.026
0.130
7.50
2.42
0.51
2.93
H
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
1.27
0.39
0.050
0.015
0.575
5
0.095
0.025
0.655 14.61
2.41
0.63
16.63
TYP
5
TYP
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
M
M
M
STYLE 5:
PIN 1. MT 1
0.25 (0.010)
A
B
2. MT 2
3. GATE
http://onsemi.com
7
2N6071A/B Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
001–800–4422–3781
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
Email: ONlit–asia@hibbertco.com
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–german@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2745
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, England, Ireland
2N6071/D
相关型号:
©2020 ICPDF网 联系我们和版权申明