2N4403 [ONSEMI]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | 2N4403 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总6页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by 2N4402/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
V
CEO
V
CBO
V
EBO
40
40
Vdc
Vdc
5.0
600
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
V
40
40
5.0
—
—
—
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
—
Vdc
(BR)EBO
E
C
Base Cutoff Current
(V = 35 Vdc, V
I
0.1
0.1
µAdc
µAdc
BEV
= 0.4 Vdc)
= 0.4 Vdc)
CE EB
Collector Cutoff Current
(V = 35 Vdc, V
I
—
CEX
CE EB
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
(I = 0.1 mAdc, V
C
h
FE
—
= 1.0 Vdc)
= 1.0 Vdc)
2N4403
30
—
CE
(I = 1.0 mAdc, V
C
2N4402
2N4403
30
60
—
—
CE
(I = 10 mAdc, V
= 1.0 Vdc)
2N4402
2N4403
50
100
—
—
C
CE
(1)
= 2.0 Vdc)
(1)
= 2.0 Vdc)
(I = 150 mAdc, V
2N4402
2N4403
50
100
150
300
C
CE
CE
(I = 500 mAdc, V
C
Both
20
—
(1)
Collector–Emitter Saturation Voltage
V
V
Vdc
Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc)
—
—
0.4
0.75
C
C
B
B
(I = 500 mAdc, I = 50 mAdc)
(1)
Base–Emitter Saturation Voltage
BE(sat)
(I = 150 mAdc, I = 15 mAdc)
0.75
—
0.95
1.3
C
C
B
B
(I = 500 mAdc, I = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 20 mAdc, V
= 10 Vdc, f = 100 MHz)
2N4402
2N4403
150
200
—
—
C
CE
Collector–Base Capacitance (V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
C
C
—
—
8.5
30
pF
pF
E
cb
Emitter–Base Capacitance (V
= 0.5 Vdc, I = 0, f = 1.0 MHz)
C
EB
eb
Input Impedance
(I = 1.0 mAdc, V
C CE
h
ie
ohms
= 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
750
1.5 k
7.5 k
15 k
–4
X 10
Voltage Feedback Ratio (I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
CE
Small–Signal Current Gain
h
fe
—
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
2N4402
2N4403
30
60
250
500
C
CE
Output Admittance (I = 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
100
µmhos
C
SWITCHING CHARACTERISTICS
Delay Time
t
—
—
—
—
15
20
ns
ns
ns
ns
d
(V
CC
C
= 30 Vdc, V = +2.0 Vdc,
BE
I
= 150 mAdc, I = 15 mAdc)
B1
Rise Time
Storage Time
Fall Time
t
r
t
225
30
s
(V
CC
= 30 Vdc, I = 150 mAdc,
C
I
= 15 mA, I = 15 mA)
B2
B1
t
f
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
–30 V
200
–30 V
Ω
200
Ω
< 20 ns
< 2 ns
+2 V
0
+14 V
0
1.0 k
Ω
1.0 k
Ω
C * < 10 pF
S
C
* < 10 pF
S
–16 V
–16 V
1.0 to 100
µ
s,
10 to 100
µs,
DUTY CYCLE = 2%
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TRANSIENT CHARACTERISTICS
25°C
100°C
30
20
10
7.0
V
= 30 V
CC
/I = 10
5.0
I
C B
C
eb
3.0
2.0
10
7.0
5.0
1.0
0.7
C
cb
0.5
Q
T
0.3
0.2
Q
A
2.0
0.1
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
10
20
30
50
70 100
200
300
500
REVERSE VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (mA)
C
Figure 3. Capacitances
Figure 4. Charge Data
100
70
100
70
I
/I = 10
C B
V
= 30 V
/I = 10
CC
I
C B
50
50
t @ V
r
= 30 V
= 10 V
CC
CC
t @ V
30
20
30
20
r
t
t
@ V
= 2 V
d
d
BE(off)
BE(off)
@ V
= 0
10
7.0
5.0
10
7.0
5.0
10
20
30
50
70 100
200
300
500
10
20
30
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 5. Turn–On Time
Figure 6. Rise Time
200
I
/I = 10
C B
100
70
I
/I = 20
C B
50
I
= I
B1 B2
t
′
= t – 1/8 t
s f
s
30
20
10
20
30
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
= –10 Vdc, T = 25°C
CE
A
Bandwidth = 1.0 Hz
10
10
8
f = 1 kHz
8
6
4
I
I
I
I
= 1.0 mA, R = 430
Ω
Ω
Ω
C
C
C
C
S
6
4
2
0
I
= 50
µA
C
= 500 µA, R = 560
S
100
500
µ
µ
A
A
= 50 µA, R = 2.7 k
S
= 100 µA, R = 1.6 kΩ
S
1.0 mA
2
0
R
= OPTIMUM SOURCE RESISTANCE
S
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10 20
50 100
50
100 200
500
1 k
2 k
5 k
10 k 20 k
50 k
f, FREQUENCY (kHz)
R
, SOURCE RESISTANCE (OHMS)
S
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
= –10 Vdc, f = 1.0 kHz, T = 25°C
V
CE
This group of graphs illustrates the relationship between
and other “h” parameters for this series of transistors. To
A
selected from both the 2N4402 and 2N4403 lines, and the
same units were used to develop the correspondingly–
numbered curves on each graph.
h
fe
obtain these curves, a high–gain and a low–gain unit were
1000
100 k
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
700
500
50 k
20 k
300
10 k
5 k
200
2 k
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
1 k
70
500
50
200
100
30
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (mAdc)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
500
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
5.0
100
50
2.0
1.0
0.5
20
10
2N4403 UNIT 1
5.0
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
0.2
0.1
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (mAdc)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4
STATIC CHARACTERISTICS
3.0
2.0
V
V
= 1.0 V
= 10 V
CE
CE
T
= 125°C
J
25°C
1.0
0.7
0.5
–55°C
0.3
0.2
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 14. DC Current Gain
1.0
0.8
0.6
0.4
0.2
I
= 1.0 mA
10 mA
100 mA
500 mA
C
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.005
I
, BASE CURRENT (mA)
B
Figure 15. Collector Saturation Region
1.0
0.8
0.5
0
T
= 25°C
J
V
@ I /I = 10
C B
for V
VC
BE(sat)
CE(sat)
0.5
1.0
1.5
2.0
2.5
0.6
0.4
V
@ V = 10 V
CE
BE(sat)
0.2
0
for V
BE
VS
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
500
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50 100 200 500
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
2N4402/D
◊
相关型号：
2N4403-18F
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N4403-18FLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N4403-18R
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N4403-18RLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N4403-5F
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5F, 3 PIN
CENTRAL
2N4403-5T
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5T, 3 PIN
CENTRAL
2N4403-5T1
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明