2N4401 [ONSEMI]
General Purpose Transistors(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | 2N4401 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(NPN Silicon) |
| 文件： | 总6页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N4400/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
V
CEO
V
CBO
V
EBO
40
60
Vdc
Vdc
6.0
600
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
V
40
60
6.0
—
—
—
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
—
Vdc
(BR)EBO
E
C
Base Cutoff Current
(V = 35 Vdc, V
I
0.1
0.1
µAdc
µAdc
BEV
= 0.4 Vdc)
= 0.4 Vdc)
CE EB
Collector Cutoff Current
(V = 35 Vdc, V
I
—
CEX
CE EB
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(1)
ON CHARACTERISTICS
DC Current Gain
(I = 0.1 mAdc, V
C
h
FE
—
= 1.0 Vdc)
= 1.0 Vdc)
2N4401
20
—
CE
(I = 1.0 mAdc, V
C
2N4400
2N4401
20
40
—
—
CE
(I = 10 mAdc, V
= 1.0 Vdc)
2N4400
2N4401
40
80
—
—
C
CE
(I = 150 mAdc, V
= 1.0 Vdc)
= 2.0 Vdc)
2N4400
2N4401
50
100
150
300
C
CE
CE
(I = 500 mAdc, V
C
2N4400
2N4401
20
40
—
—
Collector–Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc)
V
V
—
—
0.4
0.75
Vdc
Vdc
C
B
CE(sat)
Collector–Emitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc)
C
B
Base–Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc)
0.75
—
0.95
1.2
C
B
BE(sat)
Base–Emitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc)
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
B
f
T
MHz
(I = 20 mAdc, V
= 10 Vdc, f = 100 MHz)
2N4400
2N4401
200
250
—
—
C
CE
Collector–Base Capacitance (V
CB
= 5.0 Vdc, I = 0, f = 1.0 MHz)
C
C
—
—
6.5
30
pF
pF
E
cb
Emitter–Base Capacitance (V
= 0.5 Vdc, I = 0, f = 1.0 MHz)
C
EB
eb
Input Impedance
(I = 1.0 mAdc, V
C CE
h
ie
k ohms
= 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
0.5
1.0
7.5
15
–4
X 10
Voltage Feedback Ratio (I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
CE
Small–Signal Current Gain
h
fe
—
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
20
40
250
500
C
CE
Output Admittance (I = 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
30
µmhos
C
SWITCHING CHARACTERISTICS
Delay Time
t
—
—
—
—
15
20
ns
ns
ns
ns
d
(V
CC
C
= 30 Vdc, V = 2.0 Vdc,
BE
I
= 150 mAdc, I = 15 mAdc)
B1
Rise Time
Storage Time
Fall Time
t
r
t
225
30
s
(V
CC
= 30 Vdc, I = 150 mAdc,
C
I = I = 15 mAdc)
B1 B2
t
f
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
200
+30 V
1.0 to 100 µs,
DUTY CYCLE
Ω
1.0 to 100
DUTY CYCLE
µs,
200
Ω
+16 V
0
≈ 2.0%
+16 V
0
≈
2.0%
1.0 k
Ω
–14 V
1.0 k
Ω
C * < 10 pF
S
–2.0 V
C
* < 10 pF
S
< 20 ns
< 2.0 ns
–4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TRANSIENT CHARACTERISTICS
25°C
100°C
30
20
10
7.0
V
= 30 V
CC
/I = 10
5.0
I
C B
3.0
2.0
C
obo
Q
T
10
1.0
0.7
0.5
7.0
5.0
0.3
0.2
C
cb
3.0
2.0
Q
A
0.1
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
10
10
10
20
30
50
70
100
200
300
500
REVERSE VOLTAGE (VOLTS)
I
, COLLECTOR CURRENT (mA)
C
Figure 3. Capacitances
Figure 4. Charge Data
100
70
100
70
I
/I = 10
V
I
= 30 V
/I = 10
C B
CC
C B
t
r
50
50
t @ V
= 30 V
= 10 V
= 2.0 V
= 0
r
CC
CC
EB
EB
30
20
30
20
t
t @ V
f
r
t
t
@ V
@ V
d
d
10
7.0
5.0
10
7.0
5.0
10
20
30
50
70 100
200
300
500
20
30
I , COLLECTOR CURRENT (mA)
C
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
200
100
70
t
I
I
′ = t – 1/8 t
s s f
V
I
= 30 V
CC
= I
B1 B2
= I
B1 B2
/I = 10 to 20
C B
50
I
/I = 20
C B
30
20
100
70
I
/I = 10
C B
10
50
7.0
5.0
30
10
20
30
50
70 100
200
300
500
20
30
50
70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
= 10 Vdc, T = 25°C
CE
A
Bandwidth = 1.0 Hz
10
8.0
6.0
10
I
I
I
I
= 1.0 mA, R = 150
Ω
Ω
Ω
f = 1.0 kHz
C
C
C
C
S
= 500
= 100
µ
A, R = 200
S
R
= OPTIMUM
S
8.0
6.0
µA, R = 2.0 k
S
RS = SOURCE
RS = RESISTANCE
I
I
I
I
= 50 µA
= 100
= 500
C
C
C
C
= 50 µA, R = 4.0 kΩ
S
µ
A
µA
= 1.0 mA
4.0
4.0
2.0
0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10 20
50 100
50
100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
R
, SOURCE RESISTANCE (OHMS)
S
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, T = 25°C
V
CE
This group of graphs illustrates the relationship between
and other “h” parameters for this series of transistors. To
A
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
h
fe
obtain these curves, a high–gain and a low–gain unit were
300
50 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
200
20 k
2N4400 UNIT 2
10 k
100
70
5.0 k
2.0 k
2N4401 UNIT 1
2N4401 UNIT 2
50
2N4400 UNIT 1
2N4400 UNIT 2
30
20
1.0 k
500
0.1
0.2 0.3
I
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
, COLLECTOR CURRENT (mA)
C
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
I
C
Figure 11. Current Gain
Figure 12. Input Impedance
10
100
50
7.0
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0
1.0
0.3
0.2
0.1
0.2
0.3
I
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
, COLLECTOR CURRENT (mA)
C
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
I
C
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4
STATIC CHARACTERISTICS
3.0
2.0
V
V
= 1.0 V
= 10 V
CE
CE
T
= 125°C
J
1.0
0.7
0.5
25°C
–55°C
0.3
0.2
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
T
= 25°C
J
I
= 1.0 mA
10 mA
100 mA
500 mA
C
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
I
, BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.0
0.8
+0.5
T
= 25°C
J
V
@ I /I = 10
C B
BE(sat)
0
for V
CE(sat)
VC
–0.5
–1.0
0.6
0.4
V
@ V
= 10 V
BE
CE
–1.5
–2.0
–2.5
0.2
0
V
@ I /I = 10
C B
CE(sat)
for V
BE
VB
0.1 0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
500
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
500
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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2N4400/D
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