2N4401RLRPG [ONSEMI]
General Purpose Transistors; 通用晶体管
| 型号： | 2N4401RLRPG |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
40
Unit
Vdc
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
V
CEO
V
CBO
1
60
Vdc
EMITTER
V
EBO
6.0
Vdc
I
C
600
mAdc
P
D
D
MARKING
DIAGRAM
625
5.0
mW
mW/°C
@ T = 25°C
Derate above 25°C
A
1
2
Total Device Dissipation
@ T = 25°C
Derate above 25°C
P
2N
4401
YWW
1.5
12
W
mW/°C
C
3
TO−92
CASE 29
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
Maximumratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200
°C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3
°C/W
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 1
2N4401/D
2N4401
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
40
60
6.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
−
Vdc
E
C
Base Cutoff Current
(V = 35 Vdc, V = 0.4 Vdc)
I
0.1
0.1
mAdc
mAdc
BEV
CE
EB
Collector Cutoff Current
(V = 35 Vdc, V = 0.4 Vdc)
I
−
CEX
CE
EB
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
20
40
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
80
−
C
CE
(I = 150 mAdc, V = 1.0 Vdc)
100
40
300
−
C
CE
(I = 500 mAdc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc)
V
CE(sat)
−
−
0.4
0.75
Vdc
Vdc
C
B
Collector−Emitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc)
C
B
Base−Emitter Saturation Voltage (I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
0.75
−
0.95
1.2
C
B
Base−Emitter Saturation Voltage (I = 500 mAdc, I = 50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
Collector−Base Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
cb
C
eb
6.5
30
CB
E
Emitter−Base Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
pF
EB
C
Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
1.0
0.1
40
1.0
15
k ohms
C
CE
ie
−4
Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
re
8.0
500
30
X 10
C
CE
Small−Signal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
fe
−
C
CE
Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
oe
mmhos
C
SWITCHING CHARACTERISTICS
Delay Time
CE
t
d
−
−
−
−
15
20
ns
ns
ns
ns
(V = 30 Vdc, V = 2.0 Vdc,
CC
BE
I
= 150 mAdc, I = 15 mAdc)
B1
C
Rise Time
Storage Time
Fall Time
t
r
t
s
225
30
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
t
f
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
C * < 10 pF
S
−2.0 V
2N4401
ORDERING INFORMATION
Device
†
Package
Shipping
2N4401
TO−92
TO−92
5,000 Units / Box
2,000 / Tape & Reel
2,000 / Tape & Reel
2N4401RLRA
2N4401RLRAG
TO−92
(Pb−Free)
2N4401RLRM
2N4401RLRP
2N4401RLRPG
TO−92
TO−92
2,000 / Ammo Pack
2,000 / Ammo Pack
2,000 / Ammo Pack
TO−92
(Pb−Free)
2N4401ZL1
TO−92
2,000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
SpecificationsBrochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
+ꢀ30 V
1.0 to 100 ms,
200 W
1.0 to 100 ms,
200 W
+16 V
0
DUTY CYCLE ≈ 2.0%
+16 V
0
DUTY CYCLE ≈ 2.0%
1.0 kW
−14 V
1.0 kW
C * < 10 pF
S
< 20 ns
< 2.0 ns
−ꢀ4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
20
10
7.0
V
= 30 V
CC
5.0
I /I = 10
C B
3.0
2.0
C
obo
Q
T
10
1.0
0.7
0.5
7.0
5.0
0.3
0.2
C
cb
3.0
2.0
Q
A
0.1
10
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
20
30
50 70 100
200 300
500
REVERSE VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitances
Figure 4. Charge Data
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3
2N4401
100
70
100
70
I /I = 10
C B
V
CC
= 30 V
t
I /I = 10
C B
r
50
50
t @ V = 30 V
CC
r
30
20
30
20
t
f
t @ V = 10 V
r
CC
t @ V = 2.0 V
d
EB
t @ V = 0
d EB
10
7.0
5.0
10
7.0
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200
300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Rise and Fall Times
300
200
100
70
t ′ = t − 1/8 t
f
s
s
V
I
= 30 V
CC
I = I
B1 B2
I /I = 10 to 20
= I
B1 B2
C
B
50
I /I = 20
C B
30
20
100
70
I /I = 10
C B
10
50
7.0
5.0
30
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
8.0
6.0
10
I
= 1.0 mA, R = 150 W
S
f = 1.0 kHz
C
C
C
C
I
I
I
= 500 mA, R = 200 W
S
= 100 mA, R = 2.0 kW
R = OPTIMUM
S
8.0
6.0
S
RS = SOURCE
RS = RESISTANCE
I
I
I
I
= 50 mA
C
C
C
C
= 50 mA, R = 4.0 kW
S
= 100 mA
= 500 mA
= 1.0 mA
4.0
4.0
2.0
0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0ꢁk 2.0ꢁk 5.0ꢁk 10ꢁk 20ꢁk 50ꢁk 100ꢁk
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
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4
2N4401
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
h and other “h” parameters for this series of transistors. To
fe
obtain these curves, a high−gain and a low−gain unit were
300
200
50ꢁk
2N4401 UNIT 1
2N4401 UNIT 2
20ꢁk
10ꢁk
100
70
5.0ꢁk
2N4401 UNIT 1
50
2N4401 UNIT 2
2.0ꢁk
30
20
1.0ꢁk
500
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Input Impedance
10
7.0
5.0
100
50
2N4401 UNIT 1
2N4401 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2.0
1.0
0.3
0.2
2.0 3.0
I , COLLECTOR CURRENT (mA)
5.0 7.0 10
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (mA)
C
C
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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5
2N4401
STATIC CHARACTERISTICS
3.0
2.0
V
V
= 1.0 V
= 10 V
CE
CE
T = 125°C
J
1.0
0.7
0.5
25°C
−ꢀ55°C
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T = 25°C
J
I
= 1.0 mA
10 mA
100 mA
500 mA
C
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I , BASE CURRENT (mA)
2.0 3.0
5.0 7.0
10
20
30
50
B
Figure 16. Collector Saturation Region
1.0
0.8
+ꢀ0.5
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
0
−ꢀ0.5
−ꢀ1.0
−ꢀ1.5
−ꢀ2.0
−ꢀ2.5
q
for V
CE(sat)
VC
0.6
0.4
V
@ V = 10 V
CE
BE
0.2
0
V
@ I /I = 10
C B
CE(sat)
q
for V
BE
VB
50 100 200 500
50 100 200 500
0.1 0.2
0.5 1.0 2.0 5.0 10 20
0.1 0.2 0.5 1.0 2.0
5.0 10 20
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
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6
2N4401
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
C
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
2N4401
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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2N4401/D
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