2N4124 [ONSEMI]
General Purpose Transistors(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | 2N4124 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(NPN Silicon) |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N4123/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol 2N4123 2N4124
Unit
Vdc
V
CEO
V
CBO
V
EBO
30
40
25
30
Vdc
5.0
Vdc
Collector Current — Continuous
I
C
200
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
2N4123
2N4124
30
25
—
—
C
E
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
Vdc
(BR)CBO
2N4123
2N4124
40
30
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
5.0
—
50
50
Vdc
nAdc
nAdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
—
CB
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
E
I
—
EBO
EB
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(I = 2.0 mAdc, V
C
h
FE
—
= 1.0 Vdc)
= 1.0 Vdc)
2N4123
2N4124
50
120
150
360
CE
(I = 50 mAdc, V
2N4123
2N4124
25
60
—
—
C
CE
(1)
Collector–Emitter Saturation Voltage
V
V
—
0.3
Vdc
Vdc
CE(sat)
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(1)
Base–Emitter Saturation Voltage
—
0.95
BE(sat)
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mAdc, V
= 20 Vdc, f = 100 MHz)
2N4123
2N4124
250
300
—
—
C
CE
Input Capacitance
C
—
8.0
pF
pF
—
ibo
(V
EB
= 0.5 Vdc, I = 0, f = 1.0 MHz)
C
Collector–Base Capacitance
(I = 0, V = 5.0 V, f = 1.0 MHz)
C
—
4.0
cb
fe
E
CB
Small–Signal Current Gain
(I = 2.0 mAdc, V = 10 Vdc, R = 10 k ohm, f = 1.0 kHz)
h
2N4123
2N4124
50
120
200
480
C
CE
S
Current Gain — High Frequency
|h
fe
|
—
(I = 10 mAdc, V
= 20 Vdc, f = 100 MHz)
2N4123
2N4124
2.5
3.0
—
—
C
CE
(I = 2.0 mAdc, V
(I = 2.0 mAdc, V
C
= 10 V, f = 1.0 kHz)
= 10 V, f = 1.0 kHz)
2N4123
2N4124
50
120
200
480
C
CE
CE
Noise Figure
NF
dB
(I = 100 µAdc, V
f = 1.0 kHz)
= 5.0 Vdc, R = 1.0 k ohm,
2N4123
2N4124
—
—
6.0
5.0
C
CE
S
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
200
10
7.0
100
t
s
5.0
70
50
t
d
C
ibo
30
20
3.0
2.0
t
f
t
r
C
obo
V
= 3 V
CC
/I = 10
10.0
I
V
C B
= 0.5 V
7.0
5.0
EB(off)
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
Figure 1. Capacitance
Figure 2. Switching Times
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
(V
= 5 Vdc, T = 25°C)
CE
A
Bandwidth = 1.0 Hz
12
10
14
f = 1 kHz
SOURCE RESISTANCE = 200
= 1 mA
I
= 1 mA
C
12
I
C
I
= 0.5 mA
10
8
C
SOURCE RESISTANCE = 200
8
6
4
2
0
I
= 50
A
A
C
I
= 0.5 mA
C
I
= 100
SOURCE RESISTANCE = 1 k
Ω
C
6
I
= 50
A
C
4
2
0
SOURCE RESISTANCE = 500
I
= 100
A
C
0.1
0.2
0.4
1
2
4
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R
, SOURCE RESISTANCE (kΩ)
S
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
(V
= 10 V, f = 1 kHz, T = 25°C)
CE
A
300
200
100
50
20
10
5
100
70
50
2
1
30
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
I , COLLECTOR CURRENT (mA)
C
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain
Figure 6. Output Admittance
10
7.0
5.0
20
10
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
I , COLLECTOR CURRENT (mA)
C
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (mA)
C
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
STATIC CHARACTERISTICS
2.0
1.0
T
= +125°C
J
V
= 1 V
CE
+25
°
C
C
0.7
0.5
–55
°
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
, COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
1.0
0.8
T
= 25°C
J
I
= 1 mA
10 mA
30 mA
100 mA
C
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
, BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
1.2
1.0
1.0
T
= 25°C
J
V
@ I /I = 10
C B
0.5
0
BE(sat)
+25°C to +125°C
for V
VC
CE(sat)
0.8
–55°C to +25°C
V
@ V
CE
= 1 V
BE
–0.5
–1.0
–1.5
–2.0
0.6
0.4
–55
°
C to +25
°
C
V
@ I /I = 10
C B
CE(sat)
+25°C to +125°C
for V
BE(sat)
0.2
0
VB
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140
160 180 200
I
, COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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2N4123/D
◊
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