2N4029 [ONSEMI]
Small Signal Switching Transistor; 小信号开关晶体管
| 型号： | 2N4029 |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Switching Transistor |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4029, 2N4033
Product Preview
Small Signal Switching
Transistor
PNP Silicon
http://onsemi.com
Features
COLLECTOR
3
• MIL−PRF−19500/512Qualified
• Available as JAN, JANTX, and JANTXV
2
BASE
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−80
−80
−5.0
1
Unit
Vdc
Vdc
Vdc
Adc
W
1
EMITTER
V
CEO
V
CBO
V
EBO
Collector Current − Continuous
I
C
Total Device Dissipation @ T = 25°C
P
A
T
T
2N4029
2N4033
0.5
0.8
Total Device Dissipation @ T = 25°C
P
W
TO−18
CASE 206AA
STYLE 1
TO−39
CASE 205AB
STYLE 1
C
2N4029
2N4033
1.0
4.0
2N4029
2N4033
Operating and Storage Junction
Temperature Range
T , T
−65 to +200
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
ORDERING INFORMATION
Symbol
Max
Unit
Level
JAN
Device
Package Shipping
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JA
2N4029
2N4033
325
195
2N4029
TO−18
TO−39
Bulk
Bulk
JANTX
Thermal Resistance, Junction−to−Case
R
°C/W
q
JC
2N4033
2N4029
2N4033
150
40
JANTXV
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2013 − Rev. P0
2N4029/D
2N4029, 2N4033
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = −10 mAdc)
−80
−
C
Collector−Emitter Cutoff Current
I
nAdc
CES
(V = −60 Vdc)
−
−25
CE
Collector−Base Cutoff Current
I
CBO
(V = −80 Vdc, I = 0)
−
−
−10
−10
mA
nA
CB
E
(V = −60 Vdc, I = 0)
CB
E
Emitter−Base Cutoff Current
I
EBO
(V = −5 Vdc)
−
−
−10
−25
mA
nA
EB
(V = −3 Vdc)
EB
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = −0.1 mAdc, V = −5 Vdc)
50
100
70
−
300
−
C
CE
(I = −100 mAdc, V = −5 Vdc)
C
CE
CE
(I = −500 mAdc, V = −5 Vdc)
C
(I = −1 Adc, V = −5 Vdc)
25
−
C
CE
Collector−Emitter Saturation Voltage
(I = −150 mAdc, I = −15 mAdc)
V
V
Vdc
Vdc
CE(sat)
−
−
−
−0.15
−0.5
−1.0
C
B
(I = −500 mAdc, I = −50 mAdc)
C
B
(I = −1 Adc, I = −100 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −150 mAdc, I = −15 mAdc)
BE(sat)
−
−
−0.9
−1.2
C
B
(I = −500 mAdc, I = −50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
|h |
−
fe
(I = −50 mAdc, V = −10 Vdc, f = 100 MHz)
1.5
6.0
20
C
CE
Output Capacitance
C
pF
obo
(V = −10 Vdc, I = 0, 100 kHz ≤ f ≤ 1.0 MHz)
−
CB
E
Input Capacitance
C
pF
ibo
(V = −0.5 Vdc, I = 0, 100 kHz ≤ f ≤ 1.0 MHz)
−
80
EB
C
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
25
ns
ns
ns
ns
d
(Reference Figure in MIL−PRF−19500/512)
Rise Time
t
r
(Reference Figure in MIL−PRF−19500/512)
Storage Time
t
175
35
s
(Reference Figure in MIL−PRF−19500/512)
Fall Time
t
f
(Reference Figure in MIL−PRF−19500/512)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
A
DETAIL X
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
U
P
C
K
U
SEATING
PLANE
L
A
R
MILLIMETERS
DIM MIN MAX
INCHES
MIN
F
MAX
0.230
0.195
0.210
0.021
0.030
0.019
0.046
0.048
0.750
---
NOTE 5
A
B
C
D
E
F
5.31
4.52
4.32
0.41
---
5.84 0.209
4.95 0.178
5.33 0.170
0.53 0.016
E
T
NOTE 7
DETAIL X
0.76
---
NOTES 4 & 6
3X
D
0.41
0.91
0.71
12.70
6.35
0.48 0.016
1.17 0.036
1.22 0.028
19.05 0.500
--- 0.250
S
M
H
J
0.007 (0.18MM)
A
B
C
K
L
N
M
N
P
R
T
45 BSC
_
45 BSC
_
2
H
2.54 BSC
0.100 BSC
---
1
3
---
1.27
0.050
1.37 BSC
--- 0.76
2.54 --- 0.100
0.054 BSC
J
---
0.030
---
M
U
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
C
3. COLLECTOR
http://onsemi.com
3
2N4029, 2N4033
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
A
DETAIL X
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
U
P
C
K
U
SEATING
PLANE
L
A
R
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
F
MILLIMETERS
DIM MIN MAX
INCHES
MIN
NOTE 5
MAX
0.370
0.335
0.260
0.019
0.125
0.019
0.034
0.040
0.580
---
E
A
B
C
D
E
F
8.89
8.00
6.10
0.41
0.23
0.41
0.71
0.73
12.70
6.35
9.40 0.350
8.51 0.315
6.60 0.240
0.48 0.016
3.18 0.009
0.48 0.016
0.86 0.028
1.02 0.029
14.73 0.500
--- 0.250
T
NOTE 7
DETAIL X
NOTES 4 & 6
3X
D
0.007 (0.18MM)
S
M
A
B
C
H
J
K
L
N
2
H
M
N
P
R
T
45 BSC
_
45 BSC
_
1
3
5.08 BSC
0.200 BSC
---
---
1.27
0.050
J
1.37 BSC
--- 0.76
2.54 --- 0.100
0.054 BSC
M
---
0.030
---
LEAD IDENTIFICATION
DETAIL
U
C
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N4029/D
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