1SMC5.0AT3G [ONSEMI]
1500 Watt Peak Power Zener Transient Voltage Suppressors; 1500瓦峰值功率齐纳瞬态电压抑制器
| 型号： | 1SMC5.0AT3G |
| 厂家： | 
ONSEMI |
| 描述： | 1500 Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总7页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SMC5.0AT3 Series
1500 Watt Peak Power
Zener Transient Voltage
Suppressors
Unidirectional*
http://onsemi.com
The SMC series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMC series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER TRANSIENT
VOLTAGE SUPPRESSORS
5.0−78 VOLTS
1500 WATT PEAK POWER
Features
Cathode
Anode
• Working Peak Reverse Voltage Range − 5.0 V to 78 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 91.25 V
• Peak Power − 1500 W @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
• UL 497B for Isolated Loop Circuit Protection
• Maximum Temperature Coefficient Specified
• Response Time is Typically < 1 ns
AYWW
Gxx G
G
• Pb−Free Packages are Available
Mechanical Characteristics:
A
Y
= Assembly Location
= Year
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
WW = Work Week
Gxx = Device Code (Refer to page 3)
G
= Pb−Free Package
(Note: Microdot may be in either location)
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by molded polarity notch
MOUNTING POSITION: Any
ORDERING INFORMATION
†
Device
Package
Shipping
1SMCxxxAT3
1SMCxxxAT3G
SMC
2500/Tape & Reel
2500/Tape & Reel
SMC
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Bidirectional devices will not be available in this series.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 5
1SMC5.0AT3/D
1SMC5.0AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
1500
4.0
Unit
W
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
P
L
PK
DC Power Dissipation @ T = 75°C
P
W
L
D
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
54.6
18.3
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.75
6.1
165
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
R
q
JA
Forward Surge Current (Note 4) @ T = 25°C
I
200
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 x 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max @ I = 100 A) (Note 5)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
V
V
BR RWM
V
Working Peak Reverse Voltage
C
RWM
V
I
V
R
T
F
I
Maximum Reverse Leakage Current @ V
I
R
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
Forward Current
I
PP
V
Forward Voltage @ I
F
F
Uni−Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
cycle
http://onsemi.com
2
1SMC5.0AT3 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Breakdown Voltage
V
V
@ I (Note 8)
C
PP
V
RWM
V
V (Note 7)
@ I
I
(Note 6)
I
@ V
RWM
BR
T
C
PP
R
Device
Min
Nom
Max
mA
V
mA
V
A
Marking
Device*
1SMC5.0AT3, G
1SMC6.0AT3, G
1SMC6.5AT3, G
1SMC7.0AT3, G
GDE
GDG
GDK
GDM
5.0
6.0
6.5
7.0
1000
1000
500
6.4
6.7
7.02
7.6
7.0
7.37
7.98
8.6
10
10
10
10
9.2
10.3
11.2
12
163
145.6
133.9
125
6.67
7.22
7.78
200
8.19
1SMC7.5AT3, G
1SMC8.0AT3, G
1SMC8.5AT3, G
1SMC9.0AT3, G
GDP
GDR
GDT
GDV
7.5
8.0
8.5
9.0
100
50
25
8.33
8.89
9.44
10
8.77
9.36
9.92
9.21
9.83
10.4
11.1
1
1
1
1
12.9
13.6
14.4
15.4
116.3
110.3
104.2
97.4
10
10.55
1SMC10AT3, G
1SMC12AT3, G
1SMC13AT3, G
GDX
GEE
GEG
10
12
13
5
5
5
11.1
13.3
14.4
11.7
14
15.15
12.3
14.7
15.9
1
1
1
17
19.9
21.5
88.2
75.3
69.7
1SMC14AT3, G
1SMC15AT3, G
1SMC16AT3, G
1SMC17AT3, G
GEK
GEM
GEP
GER
14
15
16
17
5
5
5
5
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1
1
1
1
23.2
24.4
26
64.7
61.5
57.7
53.3
27.6
1SMC18AT3, G
1SMC20AT3, G
1SMC22AT3, G
1SMC24AT3, G
GET
GEV
GEX
GEZ
18
20
22
24
5
5
5
5
20
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1
1
1
1
29.2
32.4
35.5
38.9
51.4
46.3
42.2
38.6
22.2
24.4
26.7
1SMC26AT3, G
1SMC28AT3, G
1SMC30AT3, G
1SMC33AT3, G
GFE
GFG
GFK
GFM
26
28
30
33
5
5
5
5
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1
1
1
1
42.1
45.4
48.4
53.3
35.6
33
31
28.1
1SMC36AT3, G
1SMC40AT3, G
1SMC43AT3, G
1SMC45AT3
GFP
GFR
GFT
GFV
36
40
43
45
5
5
5
5
40
44.4
47.8
50
42.1
46.75
50.3
44.2
49.1
52.8
55.3
1
1
1
1
58.1
64.5
69.4
72.2
25.8
32.2
21.6
20.6
52.65
1SMC48AT3, G
1SMC51AT3, G
1SMC54AT3, G
1SMC58AT3, G
GFX
GFZ
GGE
GGG
48
51
54
58
5
5
5
5
53.3
56.7
60
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1
1
1
1
77.4
82.4
87.1
93.6
19.4
18.2
17.2
16
64.4
1SMC60AT3, G
1SMC64AT3, G
1SMC70AT3, G
1SMC75AT3, G
1SMC78AT3, G
GGK
GGM
GGP
GGR
GGT
60
64
70
75
78
5
5
5
5
5
66.7
71.1
77.8
83.3
86.7
70.2
74.85
81.9
87.7
91.25
73.7
78.6
86
92.1
95.8
1
1
1
1
1
96.8
103
113
121
126
15.5
14.6
13.3
12.4
11.4
6. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V ), which should be equal to or
RWM
greater than the DC or continuous peak operating voltage level.
7. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 1500 Watt at the beginning of this group.
*The “G’’ suffix indicates Pb−Free package available.
http://onsemi.com
3
1SMC5.0AT3 Series
100
PULSE WIDTH (t ) IS DEFINED
P
NONREPETITIVE
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
t ≤ 10 ms
rꢀ
PULSE WAVEFORM
SHOWN IN FIGURE 2
OF I
.
PP
100
50
0
PEAK VALUE − I
PP
10
I
PP
2
HALF VALUE −
t
P
1
0.1 ms 1 ms
10 ms
100 ms
t , PULSE WIDTH
1 ms
10 ms
0
1
2
3
4
t, TIME (ms)
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
1000
500
V
ꢀ(NOM)ꢀ=ꢀ6.8ꢀTOꢀ13ꢀV
20ꢀV
140
120
BR
T ꢀ=ꢀ25°C
L
t ꢀ=ꢀ10ꢀms
P
43ꢀV
24ꢀV
200
100
50
75ꢀV
120ꢀV
100
80
180ꢀV
20
10
60
40
20
0
5
2
1
0.3
0
25
50
75
100
125
150
0.5 0.7
1
2
3
5
7
10
20 30
T , AMBIENT TEMPERATURE (°C)
A
DV , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)
BR
BR
BR
Figure 3. Pulse Derating Curve
Figure 4. Dynamic Impedance
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-Withstand
test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
http://onsemi.com
4
1SMC5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMC series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
http://onsemi.com
5
1SMC5.0AT3 Series
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
D
t
Figure 5.
Figure 6.
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
0.01
0.1 0.2
0.5
1
2
5
10 20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
6
1SMC5.0AT3 Series
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
H
E
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
NOM
2.13
0.10
3.00
0.23
5.84
6.86
7.94
1.02
MAX
MIN
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
2.41
0.15
3.07
0.30
6.10
7.11
8.13
1.27
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
b
D
E
H
E
L
L1
0.51 REF
0.020 REF
A
c
A1
L
L1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
mm
inches
ǒ
Ǔ
SCALE 4:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
1SMC5.0AT3/D
相关型号：
1SMC5.0ATR13
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon,
CENTRAL
1SMC5.0A_09
SURFACE MOUNT UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION SILICON TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS
CENTRAL
1SMC5.0CA
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS
CENTRAL
1SMC5.0CABKLEADFREE
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,
CENTRAL
1SMC5.0CATR13LEADFREE
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,
CENTRAL
©2020 ICPDF网 联系我们和版权申明