1SMB8.5AT3G [ONSEMI]
600 Watt Peak Power Zener Transient Voltage Suppressors; 600瓦峰值功率齐纳瞬态电压抑制器
| 型号： | 1SMB8.5AT3G |
| 厂家： | 
ONSEMI |
| 描述： | 600 Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总7页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SMB5.0AT3 Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
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The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V − 170 V,
600 W PEAK POWER
Features
Cathode
Anode
• Working Peak Reverse Voltage Range − 5.0 V to 170 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V
• Peak Power − 600 W @ 1.0 ms
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1.0 ns
• Pb−Free Packages are Available
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
xx G
G
A
Y
= Assembly Location
= Year
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
WW = Work Week
xx
= Device Code (Refer to page 3)
= Pb−Free Package
G
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
(Note: Microdot may be in either location)
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
ORDERING INFORMATION
†
Device
Package
Shipping
1SMBxxxAT3
1SMBxxxAT3G
SMB
2500/Tape & Reel
2500/Tape & Reel
SMB
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 10
1SMB5.0AT3/D
1SMB5.0AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
600
Unit
W
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
P
L
PK
DC Power Dissipation @ T = 75°C
P
3.0
W
L
D
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
40
25
mW/°C
°C/W
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.55
4.4
226
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
R
q
JA
Forward Surge Current (Note 4) @ T = 25°C
I
100
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max. @ I (Note 5) = 30 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
V
V
BR RWM
V
Working Peak Reverse Voltage
C
RWM
V
I
V
R
T
F
I
Maximum Reverse Leakage Current @ V
I
R
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
Forward Current
I
PP
V
Forward Voltage @ I
F
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
Uni−Directional TVS
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2
1SMB5.0AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Breakdown Voltage
V
@ I (Note 8)
C
PP
V
C
typ
RWM
V
(Note 7) Volts
@ I
V
I
(Note 6)
(Note 9)
I
@ V
RWM
BR
T
C
PP
R
Device
V
mA
Min
Nom
Max
mA
V
A
pF
Marking
Device*
1SMB5.0AT3, G
1SMB6.0AT3, G
1SMB6.5AT3, G
1SMB7.0AT3, G
KE
KG
KK
KM
5.0
6.0
6.5
7.0
800
800
500
500
6.40
6.67
7.22
7.78
6.7
7.02
7.6
7.0
7.37
7.98
8.6
10
10
10
10
9.2
65.2
58.3
53.6
50.0
2700
2300
2140
2005
10.3
11.2
12.0
8.19
1SMB7.5AT3, G
1SMB8.0AT3, G
1SMB8.5AT3, G
1SMB9.0AT3, G
KP
KR
KT
KV
7.5
8.0
8.5
9.0
100
50
10
8.33
8.89
9.44
10.0
8.77
9.36
9.92
9.21
9.83
10.4
11.1
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
46.5
44.1
41.7
39.0
1890
1780
1690
1605
5.0
10.55
1SMB10AT3, G
1SMB11AT3, G
1SMB12AT3, G
1SMB13AT3, G
KX
KZ
LE
LG
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.7
12.85
14
12.3
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1460
1345
1245
1160
15.15
1SMB14AT3, G
1SMB15AT3, G
1SMB16AT3, G
1SMB17AT3, G
LK
LM
LP
LR
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1085
1020
965
915
1SMB18AT3, G
1SMB20AT3, G
1SMB22AT3, G
1SMB24AT3, G
LT
LV
LX
LZ
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
870
790
730
675
1SMB26AT3, G
1SMB28AT3, G
1SMB30AT3, G
1SMB33AT3, G
ME
MG
MK
MM
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
630
590
555
510
1SMB36AT3, G
1SMB40AT3, G
1SMB43AT3, G
1SMB45AT3, G
MP
MR
MT
MV
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.1
46.75
50.3
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
470
430
400
385
52.65
1SMB48AT3, G
1SMB51AT3, G
1SMB54AT3, G
1SMB58AT3, G
MX
MZ
NE
NG
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
365
345
330
310
1SMB60AT3, G
1SMB64AT3, G
1SMB70AT3, G
1SMB75AT3, G
NK
NM
NP
NR
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.2
74.85
81.9
73.7
78.6
86
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
300
280
260
245
87.7
92.1
1SMB85AT3, G
1SMB90AT3, G
1SMB100AT3, G
NV
NX
NZ
85
90
100
55.0
5.0
5.0
94.4
100
111
99.2
105.5
117
104
111
123
1.0
1.0
1.0
137
146
162
4.4
4.1
3.7
220
210
190
1SMB110AT3, G
1SMB120AT3, G
1SMB130AT3, G
1SMB150AT3, G
PE
PG
PK
PM
110
120
130
150
5.0
5.0
5.0
5.0
122
133
144
167
128.5
140
151.5
176
135
147
159
185
1.0
1.0
1.0
1.0
177
193
209
243
3.4
3.1
2.9
2.5
175
160
150
135
1SMB160AT3, G
1SMB170AT3, G
PP
PR
160
170
5.0
5.0
178
189
187.5
199
197
209
1.0
1.0
259
275
2.3
2.2
125
120
6. A transient suppressor is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than
RWM
the DC or continuous peak operating voltage level.
7. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data − 600 W at the beginning of this group.
9. Bias Voltage = 0 V, F = 1 MHz, T = 25°C
J
†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
* The “G” suffix indicates Pb−Free package available.
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3
1SMB5.0AT3 Series
100
10
PULSE WIDTH (t ) IS DEFINED AS
P
NONREPETITIVE
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
t ≤ 10 ms
rꢀ
PULSE WAVEFORM
SHOWN IN FIGURE 2
I .
PP
100
50
0
PEAK VALUE − I
PP
I
PP
2
HALF VALUE −
1
t
P
0.1
0.1 ms
1 ms
10 ms
100 ms
1 ms
10 ms
0
1
2
3
4
5
t , PULSE WIDTH
P
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
140
120
10,000
1000
T = 25°C
J
f = 1 MHz
1SMB5.0AT3G
1SMB10AT3G
100
80
100
10
1
1SMB48AT3G
60
1SMB170AT3G
40
20
0
0
25
50
75
100
125
150
1
10
100
1000
T , AMBIENT TEMPERATURE (°C)
A
BIAS VOLTAGE (VOLTS)
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
Figure 3. Pulse Derating Curve
Z
in
LOAD
V
in
V
L
Figure 5. Typical Protection Circuit
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4
1SMB5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
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5
1SMB5.0AT3 Series
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
D
t
Figure 6.
Figure 7.
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
10 20
D, DUTY CYCLE (%)
0.01
0.1 0.2
0.5
1
2
5
50 100
Figure 8. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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6
1SMB5.0AT3 Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE F
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
E
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
NOM
2.13
0.10
2.03
0.23
3.56
4.32
5.44
1.02
MAX
MIN
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
2.45
0.20
2.20
0.31
3.95
4.60
5.60
1.60
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
b
D
E
H
E
L
0.51 REF
L1
0.020 REF
A
A1
c
L
L1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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1SMB5.0AT3/D
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