1N914BTR [ONSEMI]
Small Signal Diode;1N91x, 1N4x48, FDLL914,
FDLL4x48
Small Signal Diode
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ORDERING INFORMATION
Part Number
1N914
Marking
914
Package
Packing Method
Bulk
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
DO−204AH (DO−35)
SOD−80
1N914−T50A
1N914TR
914
Ammo
914
Tape and Reel
Tape and Reel
Bulk
1N914ATR
1N914B
914A
914B
914B
916
DO−35
Cathode is denoted with a black band
1N914BTR
1N916
Tape and Reel
Bulk
Cathode Band
1N916A
916A
916B
4148
4148
4148
4148
4148
4148
4448
4448
Black
Black
Black
Black
Black
Black
Black
Bulk
1N916B
Bulk
1N4148
Bulk
SOD80
1N4148TA
1N4148−T26A
1N4148−T50A
1N4148TR
1N4148−T50R
1N4448
Ammo
LL−34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
SOD−80 COLOR BAND MARKING
1N4448TR
FDLL914
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
DEVICE
1ST BAND
FDLL914
BLACK
BLACK
BLACK
BLACK
BLACK
FDLL914A
FDLL914B
FDLL4148
FDLL4448
FDLL914A
FDLL914B
FDLL4148
FDLL4148−D87Z
FDLL4448
FDLL4448−D87Z
SOD−80
SOD−80
SOD−80
-1st band denotes cathode terminal
and has wider width
SOD−80
SOD−80
SOD−80
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
1N914/D
October, 2017 − Rev. 4
1N91x, 1N4x48, FDLL914, FDLL4x48
ABSOLUTE MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted) (Note 1)
A
Rating
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Symbol
Value
100
Unit
V
V
RRM
I
O
200
mA
mA
mA
A
I
F
300
Recurrent Peak Forward Current
I
f
400
Non−repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
I
1.0
FSM
Pulse Width = 1.0 ms
4.0
A
Storage Temperature Range
T
−65 to +200
−55 to +175
°C
°C
STG
Operating Junction Temperature Range
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
500
300
Unit
mW
°C
Power Dissipation
P
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted) (Note 2)
A
Symbol
Parameter
Breakdown Voltage
Conditions
Min
100
75
Max
Unit
V
V
R
I
R
= 100 mA
= 5.0 mA
I
R
V
V
F
Forward Voltage
914B / 4448
916B
I = 5.0 mA
0.62
0.63
0.72
0.73
1.0
V
F
I = 5.0 mA
F
V
914 / 916 / 4148
914A / 916A
916B
I = 10 mA
F
V
I = 20 mA
F
1.0
V
I = 20 mA
F
1.0
V
914B / 4448
I = 100 mA
F
1.0
V
I
Reverse Leakage
Total Capacitance
V
= 20 V
0.025
50
mA
mA
mA
pF
pF
ns
R
R
V
= 20 V, T = 150°C
A
R
V
R
= 75 V
5.0
C
916/916A/916B/4448
914/914A/914B/4148
V
V
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
2.0
T
R
4.0
R
t
Reverse Recovery Time
I = 10 mA, V = 6.0 V (600 mA)
4.0
rr
F
R
I
rr
= 1.0 mA, R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave P = 8.3 ms.
W
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2
1N91x, 1N4x48, FDLL914, FDLL4x48
TYPICAL PERFORMANCE CHARACTERISTICS
120
Ta= 25 oC
160
150
140
130
120
110
Ta=25 oC
100
80
60
40
20
0
1
2
3
5
10
20
30
50
100
10
20
30
50
70
100
Reverse Voltage, VR [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs. Reverse Current
Figure 2. Reverse Current vs. Reverse Voltage
IR − 10 to 100 V
BV − 1.0 to 100 mA
750
550
Ta= 25oC
Ta= 25 o
C
700
650
600
550
500
450
500
450
400
350
300
250
0.1
0.2 0.3
0.5
1
2
3
5
10
1
2
3
5
10
20
30
50
100
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs. Forward Current
Figure 4. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
VF − 1 to 100 mA
900
1.6
Ta= 25 oC
Typical
800
Ta= −40oC
1.4
1.2
1.0
0.8
0.6
700
Ta= 25oC
600
Ta= +65oC
500
400
300
10
20
30
50
100
200 300
500 800
3
0.01
0.1
0.3
1
10
0.03
Forward Current, IF [mA]
Forward Current, IF [mA]
Figure 5. Forward Voltage vs. Forward Current
VF − 10 to 800 mA
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
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3
1N91x, 1N4x48, FDLL914, FDLL4x48
TYPICAL PERFORMANCE CHARACTERISTICS
4.0
0.90
0.85
0.80
0.75
Ta = 25 oC
TA = 25 oC
3.5
3.0
2.5
2.0
1.5
1.0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
Reverse Recovery Current, I rr [mA]
REVERSE VOLTAGE (V)
IF = 10mA , IRR = 1.0 mA
, Rloop = 100 Ohms
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs.
Reverse Recovery Current
500
400
300
200
100
0
500
400
300
200
100
0
DO−35 and LL−34 / SOD−80
IF(AV)
− Average Rectified Current − mA
0
50
100
150
0
50
100
150
200
Ambient Temperature ( oC)
Temperature ( oC)
Figure 9. Average Rectified Current (IF(AV)
vs. Ambient Temperature (TA)
)
Figure 10. Power Derating Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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