1N6383 [ONSEMI]

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-04, 2 PIN;


型号：	1N6383
厂家：	ONSEMI
描述：	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-04, 2 PIN 局域网二极管电视
文件：	总8页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N6382 - 1N6389 Series

(ICTE-10C - ICTE-36C,

MPTE-8C - MPTE-45C)

1500 Watt Peak Power

Mosorb Zener Transient

Voltage Suppressors

Bidirectional*

http://onsemi.com

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high–energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetic axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

AXIAL LEAD

CASE 41A

PLASTIC

Specification Features:

• Working Peak Reverse Voltage Range – 8 V to 45 V

• Peak Power – 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

MPTE

–xxC

63xx

YYWW

• Response Time is Typically < 1 ns

ICTE

–xxC

YYWW

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode band does not imply polarity

MOUNTING POSITION: Any

L = Assembly Location

MPTE–xxC = ON Device Code

ICTE–xxC = ON Device Code

1N63xx = JEDEC Device Code

YY = Year

WW = Work Week

MAXIMUM RATINGS

ORDERING INFORMATION

Rating

Symbol

Value

Unit

Device

Package

Shipping

500 Units/Box

Peak Power Dissipation (Note 1)

1500

Watts

@ T ≤ 25°C

MPTE–xxC

Axial Lead

Steady State Power Dissipation

5.0

Watts

MPTE–xxCRL4

Axial Lead 1500/Tape & Reel

@ T ≤ 75°C, Lead Length = 3/8″

Derated above T = 75°C

mW/°C

°C/W

°C

ICTE–xxC*

Axial Lead

500 Units/Box

Thermal Resistance, Junction–to–Lead

ICTE–xxCRL4

Axial Lead 1500/Tape & Reel

Operating and Storage

Temperature Range

T , T

– 65 to

+175

stg

1N63xx

Axial Lead

500 Units/Box

1N63xxRL4

Axial Lead 1500/Tape & Reel

1. Nonrepetitive current pulse per Figure 4 and derated above T = 25°C

per Figure 2.

*ICTE–10C Not Available in 500 Units/Box

*Please see 1N6373 – 1N6381 (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

for Unidirectional Devices

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

1N6382/D

June, 2002 – Rev. 2

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

V V

BR RWM

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

RWM BR C

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Bi–Directional TVS

Maximum Temperature Variation of V

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Breakdown Voltage

@ I (Note 4)

V (Volts) (Note 4)

RWM

JEDEC

Device

(Note 3) (Volts)

@ I

(Note 2)

RWM

Device

@ I

(Volts)

(mA)

Min

Nom

Max

(mA)

1.0

(Volts)

(A)

100

(mV/°C)

8.0

Marking

= 1 A

11.3

13.7

16.1

20.1

24.2

29.8

50.6

63.3

= 10 A

11.5

14.1

16.5

20.6

25.2

(ON Device)

1N6382

(MPTE–8C)

1N6382

MPTE–8C

8.0

9.4

–

1N6383

(MPTE–10C) MPTE–10C

1N6384 1N6384

(MPTE–12C) MPTE–12C

1N6385 1N6385

(MPTE–15C) MPTE–15C

1N6386 1N6386

(MPTE–18C) MPTE–18C

1N6387 1N6387

(MPTE–22C) MPTE–22C

1N6388 1N6388

(MPTE–36C) MPTE–36C

1N6389 1N6389

(MPTE–45C) MPTE–45C

2.0

11.7

14.1

17.6

21.2

25.9

42.4

52.9

–

16.7

21.2

–

37.5

65.2

78.9

–

54.3

–

ICTE–10C*

ICTE–12C

ICTE–10C*

ICTE–12C

2.0

11.7

14.1

–

1.0

16.7

21.2

13.7

16.1

14.1

16.5

8.0

ICTE–15C

ICTE–18C

ICTE–22C

ICTE–36C

ICTE–15C

ICTE–18C

ICTE–22C

ICTE–36C

2.0

17.6

21.2

25.9

42.4

–

1.0

37.5

65.2

20.1

24.2

29.8

50.6

20.6

25.2

54.3

NOTES:

2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V

or greater than the dc or continuous peak operating voltage level.

), which should be equal to

RWM

3. V measured at pulse test current I at an ambient temperature of 25°C and minimum voltage in V is to be controlled.

4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.

*Not Available in the 500 Units/Box.

http://onsemi.com

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

100

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

100

0.1Ăms

1Ăms

10Ăms

100 ms

1 ms

10 ms

100 125 150 175 200

T , AMBIENT TEMPERATURE (°C)

t , PULSE WIDTH

Figure 1. Pulse Rating Curve

Figure 2. Pulse Derating Curve

PULSE WIDTH (t ) IS DEFINED AS

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF I

t ≤ 10 ms

3/8″

PEAK VALUE - I

100

3/8″

HALF VALUE -

t, TIME (ms)

100 125 150 175

200

T , LEAD TEMPERATURE (°C)

Figure 3. Steady State Power Derating

Figure 4. Pulse Waveform

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1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

1N6373, ICTE-5, MPTE-5,

through

1.5KE6.8CA

through

1N6389, ICTE-45, C, MPTE-45, C

1.5KE200CA

1000

500

1000

500

Ă=Ă6.8 to 13ĂV

Ă=Ă6.0 to 11.7ĂV

BR(NOM)

BR(MIN)

T Ă=Ă25°C

t Ă=Ă10Ăms

19ĂV

21.2ĂV

20ĂV

24ĂV

43ĂV

75ĂV

42.4ĂV

200

100

200

100

180ĂV

120ĂV

0.3

0.5 0.7

20 30

(VOLTS)

0.3

0.5 0.7

20 30

DV , INSTANTANEOUS INCREASE IN V ABOVE V

DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)

BR(NOM)

Figure 5. Dynamic Impedance

0.7

0.5

0.3

0.2

PULSE WIDTH

10 ms

0.1

0.07

0.05

1 ms

0.03

0.02

100 ms

10 ms

0.01

0.1

0.2

0.5

50 100

D, DUTY CYCLE (%)

Figure 6. Typical Derating Factor for Duty Cycle

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1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

APPLICATION NOTES

RESPONSE TIME

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 7.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 8. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

Some input impedance represented by Z is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 6. Average power must be derated as the lead or

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 6 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 ms pulse. However, when the derating factor for a

given pulse of Figure 6 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

TYPICAL PROTECTION CIRCUIT

LOAD

V (TRANSIENT)

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

V (TRANSIENT)

t = TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 7.

Figure 8.

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1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

OUTLINE DIMENSIONS

Transient Voltage Suppressors – Axial Leaded

1500 Watt Peak Power Mosorb

MOSORB

CASE 41A–04

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A-01 THRU 041A-03 OBSOLETE, NEW

STANDARD 041A-04.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

8.50

4.80

0.96

25.40

---

MAX

9.50

5.30

1.06

---

0.335

0.189

0.038

1.000

---

0.374

0.209

0.042

---

0.050

1.27

http://onsemi.com

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

Notes

http://onsemi.com

1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

1N6382/D

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1N6383 [ONSEMI]

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