1N6380RL4 [ONSEMI]
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors; 1500瓦峰值功率Mosorb TM齐纳瞬态电压抑制器
| 型号： | 1N6380RL4 |
| 厂家： | 
ONSEMI |
| 描述： | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| 文件： | 总8页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6373 − 1N6381 Series
(ICTE−5 − ICTE−36,
MPTE−5 − MPTE−45)
1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors
http://onsemi.com
Unidirectional*
Cathode
Anode
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
AXIAL LEAD
CASE 41A
PLASTIC
MARKING DIAGRAMS
A
MPTE
−xx
1N
63xx
YYWWG
G
Specification Features
• Working Peak Reverse Voltage Range − 5.0 V to 45 V
• Peak Power − 1500 Watts @ 1 ms
A
ICTE
−xx
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
YYWWG
G
A
= Assembly Location
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available*
MPTE−xx = ON Device Code
1N63xx = JEDEC Device Code
ICTE−xx = ON Device Code
Mechanical Characteristics
YY
WW
G
= Year
= Work Week
= Pb−Free Package
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
(Note: Microdot may be in either location)
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
ORDERING INFORMATION
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
†
Device
Package
Shipping
MPTE−xx, G
Axial Lead
(Pb−Free)
500 Units/Box
MPTE−xxRL4, G
ICTE−xx, G
Axial Lead 1500/Tape & Reel
(Pb−Free)
Axial Lead
(Pb−Free)
500 Units/Box
ICTE−xxRL4, G
Axial Lead 1500/Tape & Reel
(Pb−Free)
1N63xx, G
Axial Lead
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1N63xxRL4, G
Axial Lead 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 4
1N6373/D
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
P
PK
1500
W
@ T ≤ 25°C
L
Steady State Power Dissipation @ T ≤ 75°C, Lead Length = 3/8″
P
D
5.0
20
W
mW/°C
L
Derated above T = 75°C
L
Thermal Resistance, Junction−to−Lead
R
20
°C/W
q
JL
Forward Surge Current (Note 2)
I
200
A
FSM
@ T = 25°C
A
Operating and Storage Temperature Range
T , T
− 65 to +175
°C
J
stg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.
A
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V V
BR RWM
V
Working Peak Reverse Voltage
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Variation of V
I
PP
BR
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni−Directional TVS
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2
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)
A
F
F
Breakdown Voltage
V
C
@ I (Note 6)
V (Volts) (Note 6)
C
PP
V
I
V
@
RWM
R
JEDEC
Device
)
(Note 4)
V
(Note 5 (Volts)
@ I
V
C
I
PP
QV
RWM
BR
T
BR
†
Device
@ I
=
@ I
=
PP
PP
Marking
(Volts)
(mA)
300
25
Min
Nom
Max
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(Volts)
(A)
160
100
90
1 A
10 A
(mV/°C)
4.0
8.0
12
(ON Device)
1N6373, G
(MPTE−5, G)
1N6373
MPTE−5
5.0
8.0
10
12
15
22
36
45
6.0
−
−
−
−
−
−
−
−
−
9.4
7.1
7.5
1N6374, G
(MPTE−8, G)
1N6374
MPTE−8
9.4
−
15
11.3
13.7
16.1
20.1
29.8
50.6
63.3
11.5
14.1
16.5
20.6
32
1N6375, G
1N6375
(MPTE−10,G) MPTE−10
2.0
2.0
2.0
2.0
2.0
2.0
11.7
14.1
17.6
25.9
42.4
52.9
−
16.7
21.2
25
1N6376, G
1N6376
(MPTE−12, G) MPTE−12
−
70
14
1N6377, G
1N6377
(MPTE−15, G) MPTE−15
−
60
18
1N6379, G
1N6379
(MPTE−22, G) MPTE−22
−
37.5
65.2
78.9
40
26
1N6380, G
1N6380
(MPTE−36, G) MPTE−36
−
23
54.3
50
1N6381, G
1N6381
(MPTE−45, G) MPTE−45
−
19
70
60
ICTE−5, G
ICTE−10, G
ICTE−12, G
ICTE−5
ICTE−10
ICTE−12
5.0
10
12
300
2.0
2.0
6.0
11.7
14.1
−
−
−
−
−
−
1.0
1.0
1.0
9.4
160
90
7.1
7.5
4.0
8.0
12
16.7
21.2
13.7
16.1
14.1
16.5
70
ICTE−15, G
ICTE−18, G
ICTE−22, G
ICTE−36, G
ICTE−15
ICTE−18
ICTE−22
ICTE−36
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
−
−
−
−
−
−
−
−
1.0
1.0
1.0
1.0
25
30
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
14
18
21
26
37.5
65.2
54.3
3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
), which should be equal to or
RWM
greater than the dc or continuous peak operating voltage level.
5. V measured at pulse test current I at an ambient temperature of 25°C and minimum voltage in V is to be controlled.
BR
T
BR
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G’’ suffix indicates Pb−Free package available.
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3
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1ꢀms
1ꢀms
10ꢀms
100ꢀms
1 ms
10 ms
0
25
50
75
100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
1000
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
t ≤ 10 ms
r
3/8″
.
PP
PEAK VALUE − I
PP
100
50
0
3/8″
5
4
3
I
PP
HALF VALUE −
2
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100 125 150 175
200
T , LEAD TEMPERATURE (°C)
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
1N6373, ICTE-5, MPTE-5,
through
1.5KE6.8CA
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE200CA
1000
500
1000
500
V
ꢀ=ꢀ6.8 to 13ꢀV
V
ꢀ=ꢀ6.0 to 11.7ꢀV
BR(NOM)
BR(MIN)
T ꢀ=ꢀ25°C
P
T ꢀ=ꢀ25°C
L
t ꢀ=ꢀ10ꢀms
P
L
t ꢀ=ꢀ10ꢀms
19ꢀV
21.2ꢀV
20ꢀV
24ꢀV
43ꢀV
75ꢀV
42.4ꢀV
200
100
50
200
100
50
20
20
180ꢀV
120ꢀV
10
5
10
5
2
1
2
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
(VOLTS)
0.3
0.5 0.7
1
2
3
5
7
10
20 30
DV , INSTANTANEOUS INCREASE IN V ABOVE V
BR
DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)
BR(NOM)
BR
BR(NOM)
BR
BR
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
0.01
0.1
0.2
0.5
1
2
5
10
20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
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5
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
APPLICATION NOTES
RESPONSE TIME
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V (TRANSIENT)
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V (TRANSIENT)
in
V
L
V
L
V
in
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT
D
t
t
Figure 8.
Figure 9.
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6
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
MOSORB
CASE 41A−04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A−01 THRU 041A−03 OBSOLETE, NEW
STANDARD 041A−04.
K
INCHES
DIM MIN MAX
MILLIMETERS
P
MIN
8.50
4.80
0.96
25.40
−−−
MAX
9.50
5.30
1.06
−−−
A
B
D
K
P
0.335
0.189
0.038
1.000
−−−
0.374
0.209
0.042
−−−
P
A
0.050
1.27
K
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7
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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1N6373/D
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