1N6287ARLG [ONSEMI]
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, GREEN, PLASTIC, CASE 41A-02, 2 PIN;
| 型号： | 1N6287ARLG |
| 厂家： | 
ONSEMI |
| 描述： | 1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, GREEN, PLASTIC, CASE 41A-02, 2 PIN 电视 |
| 文件： | 总8页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Unidirectional and Bidirectional
GENERAL DATA IS APPLICABLE TO ALL
SERIES IN THIS GROUP
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Mosorb devices are designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are ON
Semiconductor’s exclusive, cost-effective, highly reliable Surmetic
axial leaded package and are ideally-suited for use in communication
systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other
industrial/consumer applications, to protect CMOS, MOS and Bipolar
integrated circuits.
MOSORB ZENER TVS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
Specification Features:
• Standard Voltage Range — 6.2 to 250 V
• Peak Power — 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL Recognition
PLASTIC
CASE 41A
• Response Time is Typically < 1 ns
ORDERING INFORMATION
Device
1.5KEXXXA
Package
CASE 41A
CASE 41A
Shipping
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
POLARITY: Cathode indicated by polarity band. When operated in
zener mode, will be positive with respect to anode
MOUNTING POSITION: Any
500 Units/Box
1.5KEXXXARL4
Tape and Reel
1500 Units/Reel
1.5KEXXXCA
Bidirectional
CASE 41A
500 Units/Box
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico
1.5KEXXXCARL4 CASE 41A
Bidirectional
Tape and Reel
1500 Units/Reel
1N6XXXA
CASE 41A
CASE 41A
500 Units/Box
MAXIMUM RATINGS
1N6XXXARL
Tape and Reel
1500 Units/Reel
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
P
PK
1500
Watts
@ T ≤ 25°C
L
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Steady State Power Dissipation
P
D
5
Watts
@ T ≤ 75°C, Lead Length = 3/8″
L
Derated above T = 75°C
50
mW/°C
L
Forward Surge Current (2)
I
200
Amps
FSM
@ T = 25°C
A
Operating and Storage Temperature
Range
T , T
J stg
– 65 to
+175
°C
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
maximum.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
December, 1999 – Rev. 2
1N6267A/D
1N6267A Series
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) V # = 3.5 V Max, I ** = 100 A
A
F
F
Maximum
Reverse
Voltage
Working
Peak
Reverse
Voltage
Maximum
Reverse
Surge
Breakdown Voltage
Maximum
Reverse
Leakage
@ I
Maximum
(Clamping Temperature
RSM
V
Volts
BR
Current
Voltage)
Coefficient
JEDEC
Device
@ I
T
(mA)
V
***
I
@ V
V
of V
RWM
RSM
RWM
RSM
BR
(Volts)
(Amps)
Device
Min
Nom
Max
I
(µA)
(Volts)
(%/°C)
R
1N6267A
1N6268A
1N6269A
1N6270A
1.5KE6.8A
1.5KE7.5A
1.5KE8.2A
1.5KE9.1A
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
5.8
6.4
7.02
7.78
1000
143
132
124
112
10.5
11.3
12.1
13.4
0.057
0.061
0.065
0.068
500
200
50
1N6271A
1N6272A
1N6273A
1N6274A
1.5KE10A
1.5KE11A
1.5KE12A
1.5KE13A
9.5
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
8.55
9.4
10.2
11.1
10
5
5
103
96
90
14.5
15.6
16.7
18.2
0.073
0.075
0.078
0.081
10.5
11.4
12.4
5
82
1N6275A
1N6276A
1N6277A
1N6278A
1.5KE15A
1.5KE16A
1.5KE18A
1.5KE20A
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
12.8
13.6
15.3
17.1
5
5
5
5
71
67
59.5
54
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
1N6279A
1N6280A
1N6281A
1N6282A
1.5KE22A
1.5KE24A
1.5KE27A
1.5KE30A
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
18.8
20.5
23.1
25.6
5
5
5
5
49
45
40
36
30.6
33.2
37.5
41.4
0.092
0.094
0.096
0.097
1N6283A
1N6284A
1N6285A
1N6286A
1.5KE33A
1.5KE36A
1.5KE39A
1.5KE43A
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
1
1
1
1
28.2
30.8
33.3
36.8
5
5
5
5
33
30
28
45.7
49.9
53.9
59.3
0.098
0.099
0.1
45.2
25.3
0.101
1N6287A
1N6288A
1N6289
1.5KE47A
1.5KE51A
1.5KE56A
1.5KE62A
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
40.2
43.6
47.8
53
5
5
5
5
23.2
21.4
19.5
17.7
64.8
70.1
77
0.101
0.102
0.103
0.104
1N6290A
85
1N6291A
1N6292A
1N6293A
1N6294A
1.5KE68A
1.5KE75A
1.5KE82A
1.5KE91A
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
58.1
64.1
70.1
77.8
5
5
5
5
16.3
14.6
13.3
12
92
0.104
0.105
0.105
0.106
103
113
125
1N6295A
1N6296A
1N6297A
1N6298A
1.5KE100A
1.5KE110A
1.5KE120A
1.5KE130A
95
100
110
120
130
105
116
126
137
1
1
1
1
85.5
94
102
111
5
5
5
5
11
137
152
165
179
0.106
0.107
0.107
0.107
105
114
124
9.9
9.1
8.4
1N6299A
1N6300A
1N6301A
1N6302A
1.5KE150A
1.5KE160A
1.5KE170A
1.5KE180A
143
152
162
171
150
160
170
180
158
168
179
189
1
1
1
1
128
136
145
154
5
5
5
5
7.2
6.8
6.4
6.1
207
219
234
246
0.108
0.108
0.108
0.108
1N6303A
1.5KE200A
1.5KE220A
1.5KE250A
190
209
237
200
220
250
210
231
263
1
1
1
171
185
214
5
5
5
5.5
4.6
5
274
328
344
0.108
0.109
0.109
*** Indicates JEDEC registered data.
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (V
), which should be equal to or greater than the dc or continuous peak operating
RWM
*** voltage level.
Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.
measured at pulse test current I at an ambient temperature of 25°C.
V
BR
T
# V applies to Non-CA suffix devices only.
F
FOR BIDIRECTIONAL APPLICATIONS
— USE CA SUFFIX ON 1.5KE SERIES for 1.5KE6.8CA
through 1.5KE250CA.
Preferred Bidirectional Devices —
1.5KE10CA
1.5KE18CA
1.5KE12CA
1.5KE36CA
Electrical characteristics apply in both directions.
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2
1N6267A Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1 µs
1 µs
10 µs
100 µs
1 ms
10 ms
0
25
50
75
100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6267A/1.5KE6.8A
through
1N6389, ICTE-45, C, MPTE-45, C
1N6303A/1.5KE200A
10,000
1000
10,000
MEASURED @
ZERO BIAS
MEASURED @
ZERO BIAS
1000
100
10
MEASURED @
STAND-OFF
VOLTAGE (V )
MEASURED @
STAND-OFF
R
VOLTAGE (V )
R
100
10
1
10
100
1000
1
10
100
1000
BV, BREAKDOWN VOLTAGE (VOLTS)
BV, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
t
r
3/8″
PEAK VALUE — I
RSM
100
50
0
tr 3 10 µs
3/8″
5
4
3
I
RSM
2
HALF VALUE –
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100 125 150 175
200
T , LEAD TEMPERATURE (°C)
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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3
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6267A/1.5KE6.8A
through
1N6389, ICTE-45, C, MPTE-45, C
1N6303A/1.5KE200A
1000
500
1000
V (NOM) = 6.8 to 13 V
Z
V (NOM) = 6.8 to 13 V
Z
T =25°C
=10 µs
T =25°C
L
t =10 µs
P
L
P
500
20 V
20 V
24 V
t
43 V
75 V
43 V
24 V
200
100
50
200
100
50
20
20
180 V
120 V
10
5
10
5
2
1
2
1
0.3 0.5 0.7
1
2
3
5
7
10
20 30
0.3 0.5 0.7
1
2
3
5
7
10
20 30
∆V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)
∆V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)
Z
Z
Z
Z
Z
Z
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 µs
10 µs
0.01
0.1
0.2
0.5
1
2
5
10
20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure A.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipmentorcomponentbeingprotectedasshowninFigure
B. Minimizing this overshoot is very important in the
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
andataleadtemperatureof25°C. Ifthedutycycleincreases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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4
1N6267A Series
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 µs pulse. However, when the derating factor for a
givenpulseofFigure7ismultipliedbythepeakpowervalue
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V (TRANSIENT)
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V (TRANSIENT)
in
V
L
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a “CA”
suffix; for example, 1.5KE18CA. Contact your nearest
Motorola representative.
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a “CA” suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for V which does not apply).
F
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5
1N6267A Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors — Axial Leaded
1500 Watt Peak Power
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIM P.
K
P
INCHES
DIM MIN MAX
MILLIMETERS
MIN
9.14
4.83
0.97
25.40
—
MAX
9.52
5.21
1.07
—
P
A
B
D
K
P
0.360 0.375
0.190 0.205
0.038 0.042
A
1.000
—
—
0.050
1.27
K
CASE 41A-02
PLASTIC
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
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6
1N6267A Series
Notes
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7
1N6267A Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment:
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Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
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Email: r14153@onsemi.com
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For additional information, please contact your local
Sales Representative.
1N6267A/D
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