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1N5229BTA2 [ONSEMI]

4.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN;
1N5229BTA2
型号： 1N5229BTA2
厂家： ONSEMI    ONSEMI
描述：

4.3V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

测试 二极管
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1N5221B Series  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
This is a complete series of 500 mW Zener diodes with limits and  
excellent operating characteristics that reflect the superior capabilities  
of silicon–oxide passivated junctions. All this in an axial–lead  
hermetically sealed glass package that offers protection in all common  
environmental conditions.  
http://onsemi.com  
Cathode  
Anode  
Specification Features:  
• Zener Voltage Range – 2.4 V to 91 V  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• DO–204AH (DO–35) Package – Smaller than Conventional  
DO–204AA Package  
• Double Slug Type Construction  
• Metallurgical Bonded Construction  
AXIAL LEAD  
CASE 299  
GLASS  
Mechanical Characteristics:  
CASE: Double slug type, hermetically sealed glass  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16″ from the case for 10 seconds  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
MARKING DIAGRAM  
L
1N  
52  
xxB  
YWW  
L
= Assembly Location  
1N52xxB= Device Code  
= (See Table Next Page)  
= Year  
= Work Week  
MAXIMUM RATINGS (Note 1.)  
Y
WW  
Rating  
Symbol  
Value  
Unit  
Max. Steady State Power Dissipation  
P
D
500  
mW  
@ T ≤ 75°C, Lead Length = 3/8″  
Derate above 75°C  
L
ORDERING INFORMATION  
4.0  
mW/°C  
°C  
Device  
Package  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Axial Lead  
Shipping  
Operating and Storage  
Temperature Range  
T , T  
–65 to  
+200  
J
stg  
1N52xxB  
3000 Units/Box  
5000/Tape & Reel  
5000/Tape & Reel  
3000/Ammo Pack  
5000/Ammo Pack  
5000/Ammo Pack  
3000/Tape & Reel  
3000/Tape & Reel  
1. Some part number series have lower JEDEC registered ratings.  
1N52xxBRL  
1N52xxBRL2 *  
1N52xxBRA1  
1N52xxBTA  
1N52xxBTA2 *  
{
1N52xxBRR1  
1N52xxBRR2  
}
* The “2” suffix refers to 26 mm tape spacing.  
{
Polarity band up with cathode lead off first  
Polarity band down with cathode lead off first  
}
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 2  
1N5221B/D  
1N5221B Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
otherwise noted, Based on dc measurements at thermal  
A
I
I
F
equilibrium; lead length = 3/8″; thermal resistance of heat sink  
= 30°C/W, V = 1.1 V Max @ I = 200 mA for all types)  
F
F
Symbol  
Parameter  
V
I
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
V
Z
V
R
V
ZT  
I
ZT  
V
F
R
Z
Maximum Zener Impedance @ I  
ZT  
ZK  
ZT  
ZK  
I
I
Reverse Current  
Z
ZK  
Maximum Zener Impedance @ I  
I
Reverse Leakage Current @ V  
Breakdown Voltage  
R
R
V
R
I
F
Forward Current  
Zener Voltage Regulator  
V
F
Forward Voltage @ I  
F
q
Maximum Zener Voltage Temperature Coefficient  
VZ  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead  
A
length = 3/8″; thermal resistance of heat sink = 30°C/W, V = 1.1 V Max @ I = 200 mA for all types)  
F
F
Zener Voltage (Note 3.)  
Zener Impedance (Note 4.)  
Leakage Current  
@ V  
q
VZ  
V (Volts)  
Z
@ I  
Z
ZT  
@ I  
Z
ZK  
@ I  
I
R
(Note 5.)  
ZT  
ZT  
ZK  
R
Device  
Device  
Min  
Nom  
Max  
mA  
W
W
mA  
µA  
Volts  
%/5C  
(Note 2.)  
Marking  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
2.28  
2.375  
2.565  
2.66  
2.4  
2.5  
2.7  
2.8  
3.0  
2.52  
2.625  
2.835  
2.94  
20  
20  
20  
20  
20  
30  
30  
30  
30  
29  
1200  
1250  
1300  
1400  
1600  
0.25  
0.25  
0.25  
0.25  
0.25  
100  
100  
75  
75  
50  
1
1
1
1
1
–0.085  
–0.085  
–0.08  
–0.08  
–0.075  
2.85  
3.15  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
3.14  
3.42  
3.71  
4.09  
4.47  
3.3  
3.6  
3.9  
4.3  
4.7  
3.46  
3.78  
4.09  
4.51  
4.93  
20  
20  
20  
20  
20  
28  
24  
23  
22  
19  
1600  
1700  
1900  
2000  
1900  
0.25  
0.25  
0.25  
0.25  
0.25  
25  
15  
10  
5
1
1
1
1
2
–0.07  
–0.065  
–0.06  
±0.055  
±0.03  
5
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
4.85  
5.32  
5.7  
5.89  
6.46  
5.1  
5.6  
6.0  
6.2  
6.8  
5.35  
5.88  
6.3  
6.51  
7.14  
20  
20  
20  
20  
20  
17  
11  
7
7
5
1600  
1600  
1600  
1000  
750  
0.25  
0.25  
0.25  
0.25  
0.25  
5
5
5
5
3
2
3
3.5  
4
+ 0.03  
0.038  
0.038  
0.045  
0.05  
5
2. TOLERANCE  
The JEDEC type numbers shown indicate a tolerance of ±5%.  
3. ZENER VOLTAGE (V ) MEASUREMENT  
Z
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T ) at 30°C ± 1°C and 3/8″ lead  
L
length.  
4. ZENER IMPEDANCE (Z ) DERIVATION  
Z
Z
ZT  
and Z are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I  
=
Z(ac)  
ZK  
0.1 I  
with the ac frequency = 60 Hz.  
Z(dc)  
5. TEMPERATURE COEFFICIENT (q ) *  
VZ  
Test conditions for temperature coefficient are as follows:  
A. I = 7.5 mA, T = 25°C, T = 125°C (1N5221B through 1N5242B)  
ZT  
1
2
B. I = Rated I , T = 25°C, T = 125°C (1N5243B through 1N5281B)  
ZT  
ZT  
1
2
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.  
* For more information on special selections contact your nearest ON Semiconductor representative.  
http://onsemi.com  
2
1N5221B Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, Based on dc measurements at thermal equilibrium; lead  
A
length = 3/8″; thermal resistance of heat sink = 30°C/W, V = 1.1 V Max @ I = 200 mA for all types) (continued)  
F
F
Zener Voltage (Note 7.)  
Zener Impedance (Note 8.)  
Leakage Current  
@ V  
q
VZ  
V (Volts)  
Z
@ I  
Z
ZT  
@ I  
Z
ZK  
@ I  
I
R
(Note 9.)  
ZT  
ZT  
ZK  
R
Device  
Device  
Min  
Nom  
Max  
mA  
W
W
mA  
µA  
Volts  
%/5C  
(Note 6.)  
Marking  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
7.13  
7.79  
8.265  
8.65  
9.5  
7.5  
8.2  
8.7  
9.1  
10  
7.87  
8.61  
9.135  
9.55  
10.5  
20  
20  
20  
20  
20  
6
8
8
10  
17  
500  
500  
600  
600  
600  
0.25  
0.25  
0.25  
0.25  
0.25  
3
3
3
3
3
6
6.5  
6.5  
7
0.058  
0.062  
0.065  
0.068  
0.075  
8
1N5241B  
1N5242B  
1N5243B  
1N5244B  
1N5245B  
1N5241B  
1N5242B  
1N5243B  
1N5244B  
1N5245B  
10.45  
11.4  
12.35  
13.3  
11  
12  
13  
14  
15  
11.55  
12.6  
13.65  
14.7  
20  
20  
9.5  
9
22  
30  
13  
15  
16  
600  
600  
600  
600  
600  
0.25  
0.25  
0.25  
0.25  
0.25  
2
8.4  
9.1  
9.9  
10  
0.076  
0.077  
0.079  
0.082  
0.082  
1
0.5  
0.1  
0.1  
14.25  
15.75  
8.5  
11  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
15.2  
16.15  
17.1  
18.05  
19  
16  
17  
18  
19  
20  
16.8  
17.85  
18.9  
19.95  
21  
7.8  
7.4  
7
6.6  
6.2  
17  
19  
21  
23  
25  
600  
600  
600  
600  
600  
0.25  
0.25  
0.25  
0.25  
0.25  
0.1  
0.1  
0.1  
0.1  
0.1  
12  
13  
14  
14  
15  
0.083  
0.084  
0.085  
0.086  
0.086  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
20.9  
22.8  
23.75  
25.65  
26.6  
22  
24  
25  
27  
28  
23.1  
25.2  
26.25  
28.35  
29.4  
5.6  
5.2  
5.0  
4.6  
4.5  
29  
33  
35  
41  
44  
600  
600  
600  
600  
600  
0.25  
0.25  
0.25  
0.25  
0.25  
0.1  
0.1  
0.1  
0.1  
0.1  
17  
18  
19  
21  
21  
0.087  
0.088  
0.089  
0.090  
0.091  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
28.5  
31.35  
34.2  
37.05  
40.85  
30  
33  
36  
39  
43  
31.5  
34.65  
37.8  
40.95  
45.15  
4.2  
3.8  
3.4  
3.2  
3.0  
49  
58  
70  
80  
93  
600  
700  
700  
800  
900  
0.25  
0.25  
0.25  
0.25  
0.25  
0.1  
0.1  
0.1  
0.1  
0.1  
23  
25  
27  
30  
33  
0.091  
0.092  
0.093  
0.094  
0.095  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
1N5265B  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
1N5265B  
44.65  
48.45  
53.2  
57  
47  
51  
56  
60  
62  
49.35  
53.55  
58.8  
63  
2.7  
2.5  
2.2  
2.1  
2.0  
105  
125  
150  
170  
185  
1000  
1100  
1300  
1400  
1400  
0.25  
0.25  
0.25  
0.25  
0.25  
0.1  
0.1  
0.1  
0.1  
0.1  
36  
39  
43  
46  
47  
0.095  
0.096  
0.096  
0.097  
0.097  
58.9  
65.1  
1N5266B  
1N5267B  
1N5268B  
1N5269B  
1N5270B  
1N5266B  
1N5267B  
1N5268B  
1N5269B  
1N5270B  
64.6  
71.25  
77.9  
82.65  
86.45  
68  
75  
82  
87  
91  
71.4  
78.75  
86.1  
91.35  
95.55  
1.8  
1.7  
1.5  
1.4  
1.4  
230  
270  
330  
370  
400  
1600  
1700  
2000  
2200  
2300  
0.25  
0.25  
0.25  
0.25  
0.25  
0.1  
0.1  
0.1  
0.1  
0.1  
52  
56  
62  
68  
69  
0.097  
0.098  
0.098  
0.099  
0.099  
6. TOLERANCE  
The JEDEC type numbers shown indicate a tolerance of ±5%.  
7. ZENER VOLTAGE (V ) MEASUREMENT  
Z
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T ) at 30°C ± 1°C and 3/8″ lead  
L
length.  
8. ZENER IMPEDANCE (Z ) DERIVATION  
Z
Z
ZT  
and Z are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I  
=
Z(ac)  
ZK  
0.1 I  
with the ac frequency = 60 Hz.  
Z(dc)  
9. TEMPERATURE COEFFICIENT (q ) *  
VZ  
Test conditions for temperature coefficient are as follows:  
A. I = 7.5 mA, T = 25°C, T = 125°C (1N5221B through 1N5242B)  
ZT  
1
2
B. I = Rated I , T = 25°C, T = 125°C (1N5243B through 1N5281B)  
ZT  
ZT  
1
2
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.  
* For more information on special selections contact your nearest ON Semiconductor representative.  
http://onsemi.com  
3
1N5221B Series  
0.7  
0.6  
HEAT  
SINKS  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3/8"  
3/8"  
0
20  
40  
60  
80  
100 120 140  
160  
180  
200  
T , LEAD TEMPERATURE (°C)  
L
Figure 1. Steady State Power Derating  
http://onsemi.com  
4
1N5221B Series  
APPLICATION NOTE — ZENER VOLTAGE  
500  
400  
300  
200  
100  
0
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
L
L
Lead Temperature, T , should be determined from:  
L
2.4-60ĂV  
TL = θLAPD + TA.  
θ
is the lead-to-ambient thermal resistance (°C/W) and P  
D
LA  
62-200ĂV  
0.6  
is the power dissipation. The value for θ will vary and  
LA  
depends on the device mounting method. θ is generally 30  
LA  
to 40°C/W for the various clips and tie points in common use  
and for printed circuit board wiring.  
0
0.2  
0.4  
0.8  
1
The temperature of the lead can also be measured using a  
thermocouple placed on the lead as close as possible to the  
tie point. The thermal mass connected to the tie point is  
normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result of  
pulsed operation once steady-state conditions are achieved.  
L, LEAD LENGTH TO HEAT SINK (INCH)  
Figure 2. Typical Thermal Resistance  
1000  
7000  
5000  
TYPICAL LEAKAGE CURRENT  
AT 80% OF NOMINAL  
BREAKDOWN VOLTAGE  
Using the measured value of T , the junction temperature  
L
2000  
may be determined by:  
1000  
700  
500  
TJ = TL + ∆TJL.  
∆T is the increase in junction temperature above the lead  
JL  
200  
temperature and may be found from Figure 2 for dc power:  
∆TJL = θJLPD.  
100  
70  
50  
For worst-case design, using expected limits of I , limits  
Z
of P and the extremes of T (∆T ) may be estimated.  
D
J
J
20  
Changes in voltage, V , can then be found from:  
Z
10  
7
5
∆V = θVZTJ.  
θ
, the zener voltage temperature coefficient, is found  
VZ  
2
from Figures 4 and 5.  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
1
0.7  
0.5  
+125°C  
0.2  
Surge limitations are given in Figure 7. They are lower  
than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots, resulting in device  
degradation should the limits of Figure 7 be exceeded.  
0.1  
0.07  
0.05  
0.02  
0.01  
0.007  
0.005  
+25°C  
0.002  
0.001  
3
4
5
6
7
8
9
10 11 12 13 14 15  
V , NOMINAL ZENER VOLTAGE (VOLTS)  
Z
Figure 3. Typical Leakage Current  
http://onsemi.com  
5
1N5221B Series  
TEMPERATURE COEFFICIENTS  
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)  
100  
70  
50  
+12  
+10  
+8  
30  
20  
+6  
V Ă@ĂI (NOTE 2)  
Z ZĂ  
RANGE  
10  
+4  
+2  
0
7
5
RANGE  
V Ă@ĂI  
Z
ZT  
(NOTE 2)  
3
2
-2  
-4  
1
10  
2
3
4
5
6
7
8
9
10  
11  
12  
20  
30  
50  
70  
100  
V , ZENER VOLTAGE (VOLTS)  
Z
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 4a. Range for Units to 12 Volts  
Figure 4b. Range for Units 12 to 100 Volts  
200  
180  
160  
140  
+6  
+4  
+2  
V Ă@ĂI  
Z
T Ă=Ă25°C  
A
Z
20ĂmA  
0
0.01ĂmA  
1ĂmA  
V Ă@ĂI  
Z
ZT  
(NOTE 2)  
120  
100  
-2  
-4  
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS  
NOTE: CHANGES IN ZENER CURRENT DO NOT  
NOTE: AFFECT TEMPERATURE COEFFICIENTS  
120  
130  
140  
150  
160  
170  
180  
190  
200  
3
4
5
6
7
8
V , ZENER VOLTAGE (VOLTS)  
Z
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 4c. Range for Units 120 to 200 Volts  
Figure 5. Effect of Zener Current  
1000  
500  
100  
70  
T Ă=Ă25°C  
A
T Ă=Ă25°C  
A
50  
0ĂV BIAS  
0 BIAS  
200  
100  
50  
30  
20  
1ĂV BIAS  
1ĂVOLTĂBIAS  
10  
20  
10  
5
7
5
50% OF V ĂBIAS  
Z
50% OF  
V ĂBIAS  
Z
3
2
2
1
1
1
2
5
10  
20  
50  
100  
120  
140  
160  
180  
190  
200  
220  
V , ZENER VOLTAGE (VOLTS)  
Z
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 6a. Typical Capacitance 2.4–100 Volts  
Figure 6b. Typical Capacitance 120–200 Volts  
http://onsemi.com  
6
1N5221B Series  
100  
RECTANGULAR  
WAVEFORM  
T Ă=Ă25°C PRIOR TO  
J
INITIAL PULSE  
70  
50  
11ĂV-91ĂV NONREPETITIVE  
1.8ĂV-10ĂV NONREPETITIVE  
30  
20  
5% DUTY CYCLE  
10  
7
10% DUTY CYCLE  
20% DUTY CYCLE  
5
3
2
1
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500 1000  
PW, PULSE WIDTH (ms)  
Figure 7a. Maximum Surge Power 1.8–91 Volts  
1000  
500  
1000  
700  
500  
T Ă=Ă25°C  
J
i (rms)Ă=Ă0.1 I (dc)  
V Ă=Ă2.7ĂV  
Z
Z
fĂ=Ă60ĂHz  
Z
RECTANGULAR  
WAVEFORM, T Ă=Ă25°C  
300  
200  
J
200  
100  
47ĂV  
27ĂV  
100  
70  
50  
50  
20  
100-200ĂVOLTS NONREPETITIVE  
30  
20  
6.2ĂV  
10  
7
5
10  
5
3
2
2
1
1
0.01  
0.1  
1
10  
100  
1000  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50 100  
PW, PULSE WIDTH (ms)  
I , ZENER CURRENT (mA)  
Z
Figure 7b. Maximum Surge Power DO-204AH  
100–200 Volts  
Figure 8. Effect of Zener Current on  
Zener Impedance  
1000  
700  
500  
1000  
500  
T Ă=Ă25°C  
J
i (rms)Ă=Ă0.1 I (dc)  
MAXIMUM  
MINIMUM  
Z
fĂ=Ă60ĂHz  
Z
I Ă=Ă1ĂmA  
Z
200  
200  
100  
70  
50  
100  
50  
5ĂmA  
20ĂmA  
20  
20  
10  
5
75°C  
10  
7
5
25°C  
0°C  
150°C  
2
1
2
1
1
2
3
5
7
10  
20 30  
50 70 100  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
V , ZENER VOLTAGE (VOLTS)  
Z
V , FORWARD VOLTAGE (VOLTS)  
F
Figure 9. Effect of Zener Voltage on Zener Impedance  
Figure 10. Typical Forward Characteristics  
http://onsemi.com  
7
1N5221B Series  
20  
10  
T Ă=Ă25°  
A
1
0.1  
0.01  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts  
10  
T Ă=Ă25°  
A
1
0.1  
0.01  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 12. Zener Voltage versus Zener Current — VZ = 15 thru 30 Volts  
http://onsemi.com  
8
1N5221B Series  
10  
T Ă=Ă25°  
A
1
0.1  
0.01  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100 105  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 13. Zener Voltage versus Zener Current — VZ = 30 thru 105 Volts  
10  
1
0.1  
0.01  
110  
120  
130  
140  
150  
160  
170  
180  
190  
200  
210  
220  
230  
240  
250 260  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 14. Zener Voltage versus Zener Current — VZ = 110 thru 220 Volts  
http://onsemi.com  
9
1N5221B Series  
OUTLINE DIMENSIONS  
Zener Voltage Regulators – Axial Leaded  
500 mW DO–35 Glass  
GLASS DO–35/D0–204AH  
CASE 299–02  
ISSUE A  
NOTES:  
B
1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B  
HEAT SLUGS, IF ANY, SHALL BE INCLUDED  
WITHIN THIS CYLINDER, BUT NOT SUBJECT TO  
THE MINIMUM LIMIT OF B.  
2. LEAD DIAMETER NOT CONTROLLED IN ZONE F  
TO ALLOW FOR FLASH, LEAD FINISH BUILDUP  
AND MINOR IRREGULARITIES OTHER THAN  
HEAT SLUGS.  
3. POLARITY DENOTED BY CATHODE BAND.  
4. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
D
K
F
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.200  
0.090  
0.022  
0.050  
1.500  
A
B
D
F
3.05  
1.52  
0.46  
---  
5.08 0.120  
2.29 0.060  
0.56 0.018  
F
K
1.27  
38.10  
---  
1.000  
K
25.40  
All JEDEC dimensions and notes apply.  
http://onsemi.com  
10  
1N5221B Series  
Notes  
http://onsemi.com  
11  
1N5221B Series  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
1N5221B/D  

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