1N4936G-TB [ONSEMI]
1.0A GLASS PASSIVATED FAST RECOVERY DIODE; 1.0A玻璃钝化快速恢复二极管
| 型号： | 1N4936G-TB |
| 厂家： | 
ONSEMI |
| 描述： | 1.0A GLASS PASSIVATED FAST RECOVERY DIODE |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
1N4933G---1N4937G
BL
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
GLASS PASSIVATED JUNCTION
FEATURES
Low cost
DO - 41
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Easilycleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
1N
4933G
1N
4934G
1N
4935G
1N
4936G
1N
4937G
UNITS
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
Maximum DC blocking voltage
100
Maximum average forw ard rectified current
A
IF(AV)
1.0
9.5mmlead length,
@TA=75
Peak forw ard surge current
A
8.3ms single half-sine-w ave
IFSM
30.0
1.3
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
V
VF
IR
@1.0 A
Maximum reverse current
@TA=25
5.0
100.0
A
at rated DC blocking voltage @TA=100
Maximym reverse capacitance
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
trr
CJ
200
ns
pF
12.0
RθJA
TJ
22.0
/W
Operating junction temperature range
- 55---- +175
- 55---- + 175
Storage temperature range
NOTE: 1. Measured with IF=0.5A IR=1A Irr=0.25A.
TSTG
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2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0269004
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1N4933G---1N4937G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
10
N.1.
N.1.
+0.5A
D.U.T.
(
- )
0
(+)
PULSE
50VDC
(APPROX)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
(
+ )
N.1.
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF
2. RISE TIME = 10ns MAX. SOURCE IMPEDANCE = 50
SETTIMEBASEFOR50/100ns /cm
FIG.2 --FORWARD CURRENT DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
30
1.0
Single Phase
Half Wave 50H
Resistive or
Z
24
18
0.8
Inductive Load
TJ=25
8.3ms Single Half
Sine-Wave
0.6
0.4
12
6
0.2
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40 60
100
LEADTEMPERATURE,
NUMBEROFCYCLES AT60Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FIG.4--TYPICAL JUNCTION CAPACITANCE
20
20
10
16
14
12
10
1.0
T
J
=25
PULSE WIDTH=300
s
4
0.1
TJ=25
f=1MHz
2
1
.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
.2
.4
1.0
2
4
10
20
40
100
FORWARDVOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
2.
Document Number 0269004
BLGALAXY ELECTRICAL
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