1N4148WS [ONSEMI]
小信号二极管;
| 型号： | 1N4148WS |
| 厂家： | 
ONSEMI |
| 描述： | 小信号二极管 光电二极管 信号二极管 |
| 文件： | 总5页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Small Signal Diodes
1N4148WS, 1N4448WS,
1N914BWS
Features
• General Purpose Diodes
• Fast Switching Device (T < 4.0 ns)
RR
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• Very Small and Thin SMD Package
• Moisture Level Sensitivity 1
T
• Matte Tin (Sn) Lead Finish
2
SOD−323FL
• Green Mold Compound
(Flat Lead)
CASE 477AB
• These Devices are Pb−Free and are RoHS Compliant
1
ABSOLUTE MAXIMUM RATINGS
Band Indicates Cathode
Parameter
Symbol
Value
100
75
Unit
V
Non−Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
V
V
RSM
RRM
FRM
ELECTRICAL SYMBOL
V
I
300
150
mA
mA
A
(1)
(2)
I
O
Cathode
Anode
Non−repetitive Peak Forward Surge
Current
I
FSM
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 3 of this data sheet.
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1.0
4.0
Operating Junction Temperature
Storage Temperature Range
T
+150
°C
°C
J
T
−55 to +150
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
200
Unit
mW
P
D
Power Dissipation (T = 25°C)
C
R
Thermal Resistance, Junction−to−Ambient (Note 1)
500
°C/W
q
JA
1. Device mounted on FR−4 PCB minimum land pad.
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
= 100 mA
Min
100
75
−
Max
−
Unit
BV
Breakdown Voltage
Reverse Current
Forward Voltage
V
I
I
R
R
= 5 mA
−
R
I
R
V
V
= 20 V
= 75 V
25
5
nA
mA
V
R
R
−
V
F
1N4448WS / 1N914BWS
I = 5 mA
0.62
−
0.72
1
F
1N4148WS
I = 10 mA
F
1N4448WS / 1N914BWS
I = 100 mA
F
−
1
C
Diode Capacitance
V
= 0, f = 1.0 MHz
−
4
pF
ns
O
R
T
RR
Reverse Recovery Time
I = 10 mA, I = 60 mA,
−
4
F
RR
R
I
= 1 mA, R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2021 − Rev. 3
1N4148WS/D
1N4148WS, 1N4448WS, 1N914BWS
TYPICAL CHARACTERISTICS
0.58
0.56
0.54
0.52
0.50
0.48
0.46
0.44
1.2
T = 25°C
A
1.0
0.8
0.6
0.4
0.2
0
T = −40°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0
2
4
6
8
10
12
14
0.01
0.1
1
10
100
1000
Reverse Voltage (V)
I , Forward Current (mA)
F
Figure 1. Total Capacitance
Figure 2. Forward Voltage vs. Ambient Temperature
5
250
200
150
100
50
10
T = 150°C
A
4
10
10
3
2
10
10
T = 25°C
A
1
0
10
T = −40°C
A
−1
0
10
10 20 30 40 50 60 70 80
90 100
0
25
50
75
100
125
150
175
Temperature (5C)
V , Reverse Voltage (V)
R
Figure 3. Power Derating Curve
Figure 4. Reverse Current vs. Reverse Voltage
170
160
150
140
T = 25°C
A
1
10
I , Reverse Current (mA)
100
R
Figure 5. Reverse Voltage vs. Reverse Current
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2
1N4148WS, 1N4448WS, 1N914BWS
MARKING DIAGRAM
1
2
S x
Cathode
Sx
= Calendar Year
= China Subcon
= Specific Device Code
x = 1, 2, 3
= Payweek
ORDERING INFORMATION
Part Number
†
Top Mark
Package
Shipping
1N4148WS
S1
S2
S3
SOD−323FL
(Pb−Free)
3000 / Tape & Reel
1N4448WS
1N914BWS
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−323FL
CASE 477AB
ISSUE A
DATE 03 FEB 2023
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79864E
SOD−323FL
PAGE 1 OF 1
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