首页 |元器件品牌

15GN01MA-TL-E [ONSEMI]

射频晶体管，NPN 单，8 V，50 mA，fT = 1.5 GHz;
15GN01MA-TL-E
型号： 15GN01MA-TL-E
厂家： ONSEMI    ONSEMI
描述：

射频晶体管，NPN 单，8 V，50 mA，fT = 1.5 GHz

射频 晶体管
文件： 总7页 (文件大小：300K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Ordering number : ENA1100A  
15GN01MA  
RF Transistor  
8V, 50mA, f =1.5GHz, NPN Single MCP  
T
http://onsemi.com  
Features  
•
Small ON-resistance [Ron=2 (I =3mA)]  
Ω
B
•
Small output capacitance [Cob=1.1pF (V =10V)]  
CB  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
CBO  
V
8
V
CEO  
V
3
50  
V
EBO  
I
C
mA  
mW  
Collector Dissipation  
P
When mounted on ceramic substrate (250mm2 0.8mm)  
400  
×
C
Junction Temperature  
Storage Temperature  
Tj  
150  
C
C
°
°
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: MCP  
7023A-009  
• JEITA, JEDEC  
: SC-70, SOT-323  
•
Minimum Packing Quantity : 3,000 pcs./reel  
15GN01MA-TL-E  
2.0  
0.15  
Packing Type: TL  
Marking  
3
0 to 0.08  
LOT No.  
ZA  
1
2
LOT No.  
TL  
0.65  
0.3  
Electrical Connection  
1 : Base  
3
2 : Emitter  
3 : Collector  
MCP  
1
2
Semiconductor Components Industries, LLC, 2013  
August, 2013  
71812 TKIM/93009AB TKIM TC-00002115 No. A1100-1/7  
15GN01MA  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
0.5  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
V
V
=10V, I =0A  
E
A
A
μ
CBO  
CB  
I
=2V, I =0A  
0.5  
μ
EBO  
EB  
C
h
V
CE  
=5V, I =10mA  
200  
400  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
V
=5V, I =10mA  
1.0  
1.5  
GHz  
pF  
V
T
CE C  
Cob  
V
CB  
=10V, f=1MHz  
1.1  
0.06  
2.0  
1.5  
Collector-to-Emitter Saturation Voltage  
Output ON resistance  
V
CE  
Ron  
(sat)  
I
C
=20mA, I =2mA  
0.12  
B
I =3mA, f=10kHz  
B
Ω
Ordering Information  
Device  
Package  
MCP  
Shipping  
memo  
15GN01MA-TL-E  
3,000pcs./reel  
Pb Free  
I
C
-- V  
CE  
I
-- V  
CE  
C
50  
45  
40  
35  
30  
25  
20  
15  
10  
10  
9
8
0.20mA  
0.15mA  
7
6
5
0.10mA  
0.05mA  
4
3
2
5μA  
I =0μA  
5
0
1
0
I =0mA  
B
B
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
Collector-to-Emitter Voltage, V  
CE  
-- V IT06246  
Collector-to-Emitter Voltage, V  
-- V IT06247  
CE  
I
C
-- V  
h -- I  
FE C  
BE  
7
5
60  
50  
40  
30  
20  
V
=5V  
V
=5V  
CE  
CE  
3
2
10  
0
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT06248  
2
3
5
7
2
3
5
7
2
3
5
7
100  
1.0  
10  
Base-to-Emitter Voltage, V  
BE  
-- V  
Collector Current, I -- mA  
IT05405  
C
No. A1100-2/7  
15GN01MA  
f
-- I  
Cob -- V  
CB  
T
C
5
5
f=1MHz  
V
=5V  
CE  
3
2
3
2
1.0  
1.0  
7
5
7
5
3
1.0  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
10  
100  
IT05402  
Collector Current, I -- mA  
Collector-to-Base Voltage, V  
CB  
-- V  
IT05404  
C
Cre -- V  
V
(sat) -- I  
CE C  
CB  
5
2
I
/ I =10  
B
f=1MHz  
C
3
2
0.1  
7
5
3
2
1.0  
7
5
0.01  
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
1.0  
10  
Collector-to-Base Voltage, V  
-- V IT06250  
Collector Current, I -- mA  
IT06249  
CB  
C
Ron -- I  
P
-- Ta  
B
C
10  
9
450  
400  
350  
300  
250  
200  
150  
100  
When mounted on ceramic substrate  
f=10kHz  
(250mm2✕0.8mm)  
1kΩ  
IN  
OUT  
8
10kΩ  
7
I
B
6
5
4
3
50  
0
2
1
2
3
5
7
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
1.0  
Base Current, I -- mA  
IT05403  
Ambient Temperature, Ta -- °C  
IT06251  
B
No. A1100-3/7  
15GN01MA  
S Parameters (Common emitter)  
V
V
V
=5V, I =5mA, Z =50  
Ω
CE  
C
O
Freq(MHz)  
100  
S11  
S11  
S21  
S21  
S12  
S12  
S22  
S22  
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
⏐
0.662  
0.582  
0.529  
0.487  
0.459  
0.429  
0.409  
0.388  
0.374  
0.365  
-25.65  
-36.72  
-47.21  
-56.61  
-65.82  
-74.14  
-82.44  
-89.94  
-96.79  
-103.28  
4.631  
3.028  
2.353  
1.955  
1.691  
1.496  
1.353  
1.239  
1.149  
1.072  
122.00  
112.20  
104.69  
97.68  
91.07  
85.11  
79.01  
73.29  
67.98  
63.13  
0.028  
0.051  
0.071  
0.088  
0.103  
0.116  
0.128  
0.138  
0.148  
0.156  
71.36  
68.80  
65.59  
63.00  
60.43  
57.83  
56.22  
54.76  
53.44  
52.60  
0.765  
0.732  
0.713  
0.700  
0.689  
0.679  
0.674  
0.671  
0.671  
0.670  
-10.50  
-14.15  
-17.91  
-21.58  
-25.23  
-28.81  
-32.38  
-35.89  
-39.34  
-42.75  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
=5V, I =10mA, Z =50  
Ω
CE  
C
O
Freq(MHz)  
100  
S11  
S11  
S21  
S21  
S12  
S12  
S22  
⏐
S22  
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
0.587  
0.502  
0.444  
0.405  
0.381  
0.356  
0.342  
0.329  
0.319  
0.315  
-31.65  
-46.40  
-59.47  
-70.80  
-81.80  
-91.29  
-101.15  
-109.42  
-116.99  
-124.06  
6.647  
4.239  
3.227  
2.616  
2.217  
1.922  
1.715  
1.544  
1.414  
1.305  
118.78  
108.57  
100.32  
93.18  
86.64  
80.82  
74.86  
69.40  
64.16  
59.41  
0.026  
0.046  
0.064  
0.079  
0.093  
0.105  
0.115  
0.125  
0.135  
0.144  
71.86  
68.22  
65.90  
63.91  
62.30  
60.39  
59.29  
58.34  
57.86  
57.47  
0.694  
0.653  
0.630  
0.619  
0.607  
0.598  
0.596  
0.593  
0.594  
0.593  
-11.96  
-15.76  
-19.10  
-22.50  
-25.83  
-29.19  
-32.72  
-36.10  
-39.48  
-42.80  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
=5V, I =20mA, Z =50  
Ω
CE  
C
O
Freq(MHz)  
100  
S11  
S11  
S21  
S21  
S12  
S12  
S22  
S22  
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
⏐
∠
⏐
⏐
0.505  
0.417  
0.369  
0.341  
0.328  
0.316  
0.311  
0.306  
0.304  
0.306  
-41.07  
-60.49  
8.945  
5.500  
4.039  
3.197  
2.654  
2.264  
1.988  
1.771  
1.605  
1.470  
114.82  
103.75  
95.20  
88.11  
81.71  
76.38  
70.80  
65.75  
60.92  
56.51  
0.023  
0.042  
0.056  
0.070  
0.082  
0.094  
0.104  
0.115  
0.125  
0.135  
71.42  
69.03  
67.39  
66.22  
65.43  
64.49  
64.03  
63.95  
64.09  
64.16  
0.611  
0.568  
0.548  
0.539  
0.533  
0.528  
0.530  
0.530  
0.534  
0.537  
-13.64  
-16.14  
-18.89  
-21.75  
-24.77  
-27.99  
-31.32  
-34.57  
-37.93  
-41.24  
200  
300  
-76.83  
400  
-90.31  
500  
-102.08  
-112.57  
-122.49  
-130.50  
-137.80  
-144.30  
600  
700  
800  
900  
1000  
No. A1100-4/7  
15GN01MA  
Embossed Taping Specification  
15GN01MA-TL-E  
No. A1100-5/7  
15GN01MA  
Outline Drawing  
Land Pattern Example  
15GN01MA-TL-E  
Mass (g) Unit  
Unit: mm  
0.006  
mm  
* For reference  
0.7  
0.65 0.65  
No. A1100-6/7  
15GN01MA  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No. A1100-7/7  

相关型号：

15GN01MA_12

 VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
SANYO

15GN01NA

 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
SANYO

15GN01SA

 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
SANYO

15GN03C

 15GN03C
SANYO

15GN03CA

 NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications
SANYO

15GN03CA-TB-E

 NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
SANYO

15GN03CA-TB-E

 射频晶体管，NPN 单 CP，10 V，70 mA，fT = 1.5 GHz
ONSEMI

15GN03CA_12

 NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
SANYO

15GN03F

 VHF High-frequency Amplifier Applications
SANYO

15GN03FA

 VHF High-frequency Amplifier Applications
SANYO

15GN03FA-TL-H

 射频晶体管，NPN 单，10 V，70 mA，fT = 1.5 GHz
ONSEMI

15GN03FA_12

 VHF High-frequency Amplifier Applications
SANYO
©2020 ICPDF网 联系我们和版权申明