SA4558N [NXP]
Dual general-purpose operational amplifier; 双通用运算放大器
| 型号： | SA4558N |
| 厂家： | 
NXP |
| 描述： | Dual general-purpose operational amplifier |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
DESCRIPTION
PIN CONFIGURATIONS
The 4558 is a dual operational amplifier that is internally
compensated. Excellent channel separation allows the use of a dual
device in a single amp application, providing the highest packaging
density. The NE/SA/SE4558 is a pin-for-pin replacement for the
RC/RM/RV4558.
D and N Packages
A
1
2
3
4
8
7
6
5
V+
B
OUT
A
IN–
A
OUT
– +
B
B
B
A
IN–
IN+
+
IN+
V–
–
FEATURES
• 2MHz unity gain bandwidth guaranteed
• Supply voltage ±22V for SE4558 and ±18V for NE4558
• Short-circuit protection
• No frequency compensation required
• No latch-up
• Large common-mode and differential voltage ranges
• Low power consumption
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE4558D
NE4558N
SA4558N
DWG #
0174C
0404B
0404B
0404B
0404B
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
-40 to +85°C
-40 to +85°C
SA4558D
-55 to +125°C
SE4558N
EQUIVALENT SCHEMATIC
8
+
v
–
OUYPUT 1(7)
2(6)
3(5)
INPUTS
+
–
4
V
65
August 31, 1994
853-0840 13721
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V
CC
Supply voltage
SE4558
±22
±18
V
V
NE4558, SA4558
P
D MAX
Maximum power dissipation,
1
T =25°C (Still air)
A
N package
1160
780
mW
mW
V
D package
Differential input voltage
±30
2
V
IN
Input voltage
±15
V
T
STG
Storage temperature range
-65 to +150
°C
T
A
Operating ambient temperature range
SE4558
-55 to +125
-40 to +85
0 to +70
300
°C
°C
°C
°C
SA4558
NE4558
T
SOLD
Lead soldering temperature (10sec max)
3
Output short-circuit duration
Indefinite
NOTES:
1. Derate above 25°C at the following rates:
N package at 9.3mW/°C
D package at 6.2mW/°C
2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
3. Short-circuit may be to ground on one amp only. Rating applies to +125°C case temperature or +75°C ambient temperature for NE4558 and
to +85°C ambient temperature for SA4558.
DC ELECTRICAL CHARACTERISTICS
V
CC
=+15V, TA= 25°C unless otherwise specified.
SE4558
Typ
1.0
4
SA/NE4558
SYMBOL
PARAMETER
Input offset voltage
TEST CONDITIONS
UNIT
Min
Max
Min
Typ
2.0
4
Max
V
OS
R ≤10kΩ
S
5.0
6.0
mV
µV/°C
nA
∆V /∆T
Over temp.
Over temp.
Over temp.
OS
I
Input offset current
50
200
500
30
200
500
OS
∆I /∆T
OS
20
20
pA/°C
nA
I
Input bias current
40
200
40
BIAS
∆I /∆T
B
40
pA/°C
MΩ
R
Input resistance
0.3
1.0
0.3
1.0
IN
R ≥2kΩ
50,00
0
300,0
00
20,00
0
300,0
00
L
A
V
Large-signal voltage gain
V/V
V
=±10V
OUT
R ≥10kΩ
R ≥2kΩ
L
±12
±10
±14
±13
±12
±10
±14
±13
V
V
L
Output voltage swing
V
Input voltage range
±12
±13
100
10
±12
±13
100
10
V
IN
CMRR
Common-mode rejection ratio
Power supply rejection ratio
Short-circuit current
R ≤10kΩ
70
70
dB
S
PSRR
R ≤10kΩ
S
150
60
150
60
µV/V
mA
mW
I
5
25
5
25
SC
Power consumption (all amplifiers)
R =∞
L
120
170
120
170
66
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
DC ELECTRICAL CHARACTERISTICS (Continued)
SE4558
Typ
SA/NE4558
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
=20mV
Min
Max
Min
Typ
Max
V
IN
Transient response (unity gain)
R =2kΩ
L
C ≤100pF
L
t
R
Rise time
100
15.0
1.0
100
15.0
1.0
ns
%
Overshoot
SR
Slew rate (unity gain)
R ≥2kΩ
L
V/µs
f=10kHz
R =1kΩ
S
Channel separation (gain=100)
Unity gain bandwidth (gain=1)
Phase margin
90
3.0
45
90
3.0
45
dB
GBW
2.0
2.0
MHz
De-
gree
θ
M
nV/√H
z
V
NOISE
Input noise voltage
f=1kΩ
25
25
NOTE: The following specifications apply over operating temperature range.
V
Input offset voltage
Input offset current
R ≤10kΩ
S
6.0
7.5
mV
nA
OS
1
I
500
300/500
OS
800/1500
I
Input bias current
1500
nA
BIAS
1
R ≥2kΩ
L
A
Large-signal voltage gain
Output voltage swing
Power consumption
25,000
15,000
V/V
V
V
V
=±10V
OUT
R ≥2kΩ
L
±10
±10
T =HIGH
105
125
150
200
115
120
150
200
mW
mW
A
P
C
T =LOW
A
NOTES:
1. SA4558 only.
67
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
TYPICAL PERFORMANCE CURVES
Input Bias as a
Function of Ambient
Temperature
Input Offset Current as
as a Function of Ambient
Temperature
Common–Mode Range as
a Function of Supply
Voltage
100
25
–15
o
T
= 25 C
V
= + 15V
V
= + 15V
A
S
S
–10
–5
20
15
10
80
60
0
40
20
0
5
5
0
10
15
0
10 20 30 40 50 60 70
0
10 20 30 40 50 60 70
4
6
8
10 12 14 16 18
o
o
TEMPERATURE ( C)
TEMPERATURE ( C)
SUPPLY VOLTAGE (V)
Open–Loop Voltage Gain
as a Function of
Frequency
Open–Loop Gain as a
Function of
Power Consumption as
a Function of Ambient
Temperature
Temperature
120
800K
600K
140
130
V
= + 15V
100
80
S
R
= 2KΩ
L
120
110
100
90
60
40
20
0
400K
200K
0K
–20
80
0
10 20 30 40 50 60 70
0
10 20 30 40 50 60 70
1
10 100 1K 10K 100K1K 10M
FREQUENCY (Hz)
o
o
TEMPERATURE ( C)
TEMPERATURE ( C)
Typical Output Voltage
as a Function of
Output Voltage Swing
as a Function of
Load Resistance)
Output Voltage Swing
as a Function of
Frequency
Supply Voltage
15
28
26
40
36
o
T
= 25 C
A
10
5
24
22
32
28
24
20
18
12
8
20
o
T
= 25 C
= + 15V
A
18
16
0
V
T
= + 15V
V
S
S
o
= 25 C
–5
A
14
R
= 25KΩ
12
10
8
L
–10
4
0
100
R
= 2KΩ
L
–15
0.1 0.2
0.5 1.0 2.0
5.0 10
4
6
8
10 12 14 16 18
1K
10K
100K 1M
LOAD RESISTANCE (KΩ))
SUPPLY VOLTAGE (V)
FREQUENCY (Hz)
68
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Dual general-purpose operational amplifier
NE/SA/SE4558
TYPICAL PERFORMANCE CURVES (Continued)
Quiescent Current as a
Function of
Voltage–Follower
Large–Signal Pulse
Response
Supply Voltage
Transient Response
6
5
28
24
20
10
8
6
V
= + 15V
S
5o
o
T
= 2
C
T
= 25 C
A
A
4
90%
4
3
16
12
V
= + 15V
= 25 C
S
2
0
o
T
A
R
= 2KΩ
S
L
–2
8
4
C
= 100pF
2
1
0
–4
–6
–8
10% RISE TIME
0
–10
0
.25 .50 .75 1.0 1.25
0
5
10
20
TIME (µS)
30
40
0
3
6
9
12
15 18
SUPPLY VOLTAGE (V)
TIME (µS)
Input Noise Current as a Function
of Frequency
Input Noise Voltage as a Function
of Frequency
1000
100
100
10
V
= + 15V
o
S
V
= + 15V
o
S
T
= 25 C
T = 25 C
A
R
A
= 50Ω
S
R
A
= 100K
S
= 60dB
= 60dB
V
V
10
1
1
0.1
1
10
100
1K
10K
100K
1
10
100
1K
10K
100K
FREQUENCY (Hz)
FREQUENCY (Hz)
Total Harmonic Distortion vs
Output Voltage
Distortion vs Frequency
V
O
= 1V
Channel Separation
RMS
140
120
100
7
6
6
V
15V
R
= +
S
5
5
4
V
= +30V
= 2KΩ
10S
L
RIAA COMPENSATION
4
3
2
1
80
60
40
A
= 40dB
= 1kHz
= 1KΩ
V
3
2
1
R
S
V
15V
= +
S
20
0
o
T
= 25 C
A
0
0
10
100
1K
10K
100k
1
2
3
4
5
6
7
8
9
10
0
100
1K
10K
100K
V
OUTPUT VOLTAGE (V
)
RMS
FREQUENCY (Hz)
FREQUENCY (Hz)
O
69
August 31, 1994
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