RX1214B80W [NXP]
NPN microwave power transistors; NPN微波功率晶体管![RX1214B80W](http://pdffile.icpdf.com/pdf1/p00033/img/icpdf/RX1214B80W_174331_icpdf.jpg)
型号: | RX1214B80W |
厂家: | ![]() |
描述: | NPN microwave power transistors |
文件: | 总12页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B80W; RX1214B130Y
NPN microwave power transistors
1997 Feb 14
Product specification
Supersedes data of November 1994
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
FEATURES
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
• Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
narrowband amplifier.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CONDITIONS
• Diffused emitter ballasting resistors
(GHz)
improve ruggedness
Class C
RX1214B80W δ = 10%
tp = 500 µs;
1.2 to
1.4
40
≥80
≥7
≥35
• Interdigitated emitter-base
structure provides high emitter
efficiency
Class C
RX1214B130Y δ = 5%
tp = 150 µs;
1.2 to
1.4
50
≥130
≥7
≥35
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
PINNING - SOT439A
PIN
• Multicell geometry improves power
sharing and reduces thermal
resistance
DESCRIPTION
1
2
3
collector
emitter
• Internal input and output
prematching networks allow an
easier design of circuits.
base connected to flange
APPLICATIONS
Common-base class C broadband
pulsed power amplifiers for radar
applications in the 1.2 to 1.4 GHz
band. Also suitable for long pulse,
heavy duty operation within this band.
1
handbook, 4 columns
c
b
3
3
DESCRIPTION
e
2
MAM045
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
Top view
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 14
2
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX. UNIT
−
65
15
60
3
V
V
V
V
A
W
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
open base
−
RBE = 0 Ω
−
open collector
−
collector current (DC)
total power dissipation
storage temperature
tp ≤ 150 µs; δ ≤ 5%
Tmb < 75 °C; tp ≤ 150 µs; δ ≤ 5%
−
9
Ptot
Tstg
Tj
−
280
−65
−
+200 °C
operating junction temperature
soldering temperature
200
235
°C
°C
Tsld
t ≤ 10 s; note 1
−
Note
1. Up to 0.2 mm from ceramic.
MGA256
300
handbook, halfpage
P
tot
(W)
200
100
0
−50
50
150
250
o
T
( C)
mb
tp = 150 µs; δ = 5%; Ptot max = 280 W.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 14
3
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
Zth j-h
PARAMETER
CONDITIONS
MAX.
UNIT
thermal resistance from junction to mounting base Tj = 120 °C
1.75
0.2
K/W
K/W
K/W
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
tp = 150 µs; δ = 5%;
notes 1 and 2
0.4
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
IE = 0; VCB = 50 V
IC = 0; VEB = 1.5 V
IC = 60 mA; VBE = 0
MIN.
MAX.
UNIT
−
−
6
mA
IEBO
emitter cut-off current
0.6
mA
V
V(BR)CES
collector-emitter breakdown voltage
60
−
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CONDITIONS
(GHz)
Class C
tp = 150 µs; δ = 5%
tp = 500 µs; δ = 10%
1.2 to 1.4
1.2 to 1.4
50
40
≥130; typ. 140
≥7; typ. 7.5
≥35; typ. 39
typ. 80
typ. 8.5
typ. 40
List of components (see Fig.3)
COMPONENT DESCRIPTION
L1
VALUE
DIMENSIONS
CATALOGUE NO.
0.5 mm copper wire
trimmer capacitor
total length = 15 mm
C1
C2
C3
C4
0.6 − 5 pF
Tekelec, ref AT3-7271SL
chip capacitor
tantalum capacitor
feedthrough bypass capacitor
10 µF, 50 V
Erie, ref.1250-003
1997 Feb 14
4
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
30 mm
30 mm
40 mm
40 mm
MBC725
C4
C3
L1
input
output
C2
C1
MBC726
10.3
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Broadband test circuit.
5
1997 Feb 14
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
MGA258
MGA257
10
45
handbook, halfpage
handbook, halfpage
G
η
p
C
(dB)
9
(%)
43
8
7
41
39
6
5
37
35
1.1
1.1
1.2
1.3
1.4
1.5
1.2
1.3
1.4
1.5
f (GHz)
f (GHz)
Class C pulse operation; tp = 500 µs; δ = 5%.
VCC = 50 V; PO = 130 W.
Class C pulse operation; tp = 500 µs; δ = 5%.
CC = 50 V; PO = 130 W.
Broadband test circuit as shown in Fig.3.
Broadband test circuit as shown in Fig.3.
V
Fig.5 Collector efficiency as a function
of frequency.
Fig.4 Power gain as a function of frequency.
1997 Feb 14
6
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
1
0.5
2
0.2
1.2 GHz
5
Z
i
10
+
j
1.3
1.4 GHz
0.2
0.5
1
2
5
10
0
∞
–
j
10
0.2
5
0.5
2
1
MGA255
VCC = 50 V; ZO = 10 Ω; POUT = 130 W.
Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.
1
0.5
2
0.2
5
Z
L
1.3
0.5
10
1.4 GHz
0.2
+ j
– j
1
2
5
10
0
∞
1.2 GHz
10
5
0.2
0.5
2
1
MGA254
VCC = 50 V; ZO = 10 Ω; POUT = 130 W.
Fig.7 Load impedance as a function of frequency, associated with optimum input impedance.
1997 Feb 14
7
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
PACKAGE OUTLINE
12.85 max
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
10.3
10.0
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.
Fig.8 SOT439A.
1997 Feb 14
8
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 14
9
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
NOTES
1997 Feb 14
10
Philips Semiconductors
Product specification
NPN microwave power transistors
RX1214B80W; RX1214B130Y
NOTES
1997 Feb 14
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 14
Document order number: 9397 750 01739
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