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PUMH11T/R [NXP]

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal;
PUMH11T/R
型号： PUMH11T/R
厂家： NXP    NXP
描述：

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal

晶体 小信号双极晶体管 开关 光电二极管
文件： 总8页 (文件大小：110K)
中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PEMH11; PUMH11  
NPN/NPN resistor-equipped  
transistors; R1 = 10 kΩ, R2 = 10 kΩ  
Product data sheet  
2003 Oct 20  
Supersedes data of 2001 Oct 22  
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
FEATURES  
QUICK REFERENCE DATA  
• Built-in bias resistors  
SYMBOL  
PARAMETER  
TYP. MAX. UNIT  
• Simplified circuit design  
VCEO  
collector-emitter  
voltage  
−
50  
V
• Reduction of component count  
• Reduced pick and place costs.  
IO  
output current (DC)  
NPN  
−
100  
−
mA  
−
TR1  
TR2  
R1  
−
NPN  
−
−
−
APPLICATIONS  
bias resistor  
bias resistor  
10  
10  
−
kΩ  
kΩ  
• Low current peripheral driver  
R2  
−
• Replacement of general purpose transistors in digital  
applications  
DESCRIPTION  
• Control of IC inputs.  
NPN/NPN resistor-equipped transistors (see “Simplified  
outline, symbol and pinning” for package details).  
PRODUCT OVERVIEW  
PACKAGE  
TYPE  
PNP/PNP  
COMPLEMENT  
NPN/PNP  
COMPLEMENT  
MARKING CODE  
NUMBER  
PHILIPS  
SOT666  
SOT363  
EIAJ  
PEMH11  
PUMH11  
H1  
H*1(1)  
PEMB11  
PUMB11  
PEMD3  
PUMD3  
SC-88  
Note  
1. * = p: Made in Hong Kong.  
* = t: Made in Malaysia.  
* = W: Made in China.  
SIMPLIFIED OUTLINE, SYMBOL AND PINNING  
PINNING  
TYPE NUMBER  
SIMPLIFIED OUTLINE AND SYMBOL  
PIN  
DESCRIPTION  
PEMH11  
PUMH11  
1
2
3
4
5
6
emitter TR1  
base TR1  
6
5
4
handbook, half6page  
5
2
4
collector TR2  
emitter TR2  
base TR2  
R1 R2  
TR2  
TR1  
R2 R1  
collector TR1  
1
3
1
2
3
Top view  
MHC650  
2003 Oct 20  
2
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
VERSION  
SOT666  
SOT363  
PEMH11  
PUMH11  
−
−
plastic surface mounted package; 6 leads  
plastic surface mounted package; 6 leads  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per transistor  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
open emitter  
−
−
−
50  
V
V
V
open base  
50  
10  
open collector  
positive  
−
−
−
−
+40  
−10  
100  
100  
V
V
negative  
IO  
output current (DC)  
peak collector current  
total power dissipation  
SOT363  
mA  
mA  
ICM  
Ptot  
Tamb ≤ 25 °C  
note 1  
−
−
200  
mW  
mW  
°C  
SOT666  
notes 1 and 2  
200  
Tstg  
Tj  
storage temperature  
junction temperature  
operating ambient temperature  
−65  
−
+150  
150  
°C  
Tamb  
−65  
+150  
°C  
Per device  
Ptot  
total power dissipation  
SOT363  
Tamb ≤ 25 °C  
note 1  
−
−
300  
300  
mW  
mW  
SOT666  
notes 1 and 2  
Notes  
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.  
2. Reflow soldering is the only recommended soldering method.  
2003 Oct 20  
3
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Per transistor  
Rth j-a  
thermal resistance from junction to ambient  
Tamb ≤ 25 °C  
SOT363  
SOT666  
note 1  
625  
625  
K/W  
K/W  
notes 1 and 2  
Per device  
Rth j-a  
thermal resistance from junction to ambient  
Tamb ≤ 25 °C  
note 1  
SOT363  
SOT666  
416  
416  
K/W  
K/W  
notes 1 and 2  
Notes  
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.  
2. Reflow soldering is the only recommended soldering method.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
Per transistor  
ICBO  
ICEO  
collector-base cut-off current  
collector-emitter cut-off current  
VCB = 50 V; IE = 0  
−
−
100  
1
nA  
μA  
μA  
μA  
VCE = 30 V; IB = 0  
−
−
VCE = 30 V; IB = 0; Tj = 150 °C  
VEB = 5 V; IC = 0  
−
−
50  
400  
−
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
−
−
VCE = 5 V; IC = 5 mA  
30  
−
−
VCEsat  
Vi(off)  
Vi(on)  
R1  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
−
150  
0.8  
−
mV  
V
input-off voltage  
input-on voltage  
input resistor  
IC = 100 μA; VCE = 5 V  
−
1.1  
1.8  
10  
IC = 10 mA; VCE = 0.3 V  
−
V
7
13  
kΩ  
R2  
-------  
resistor ratio  
0.8  
1
1.2  
2.5  
R1  
Cc  
collector capacitance  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
−
−
pF  
2003 Oct 20  
4
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
PACKAGE OUTLINES  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
2003 Oct 20  
5
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2003 Oct 20  
6
NXP Semiconductors  
Product data sheet  
NPN/NPN resistor-equipped transistors;  
R1 = 10 kΩ, R2 = 10 kΩ  
PEMH11; PUMH11  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General ⎯ Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale ⎯ NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes ⎯ NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license ⎯ Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use ⎯ NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control ⎯ This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data ⎯ The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications ⎯ Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values ⎯ Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2003 Oct 20  
7
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/05/pp8  
Date of release: 2003 Oct 20  
Document order number: 9397 750 11875  

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