PSMN8R5-100PS [NXP]
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220;
| 型号： | PSMN8R5-100PS |
| 厂家： | 
NXP |
| 描述： | N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 |
| 文件： | 总14页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B
A
0
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PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
17 October 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
•
•
3. Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
100
263
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
-
[1]
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12
4.5
6.4
8.5
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
-
-
33
-
-
nC
nC
QG(tot)
111
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
-
219
mJ
source avalanche
energy
[1] Continious current limited by package.
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NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN8R5-100PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN8R5-100PS
PSMN8R5-100PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tj = 25 °C; Fig. 1
[1]
-
-
-
100
75
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
A
IDM
peak drain current
429
A
PSMN8R5-100PS
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Product data sheet
17 October 2013
2 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Ptot
Parameter
Conditions
Min
-
Max
263
175
175
260
Unit
W
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
-
°C
Tj
°C
Tsld(M)
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
100
429
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
219
mJ
[1] Continious current limited by package.
03aa16
003aak417
120
160
ID
(A)
P
der
(%)
120
80
(1)
80
40
0
40
0
0
50
100
150
200
0
50
100
150
200
°
Tmb ( C)
T
(°C)
mb
(1) Capped at 100A due to package
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
Fig. 1. Continuous drain current as a function of
mounting base temperature
PSMN8R5-100PS
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Product data sheet
17 October 2013
3 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak418
103
IAL
(A)
102
10
1
(1)
(2)
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aak419
103
ID
Limit RDSon = VDS / ID
(A)
102
µ
tp =10
s
µ
100
s
10
1
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
0.57
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.49
K/W
PSMN8R5-100PS
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Product data sheet
17 October 2013
4 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah108
1
= 0.5
δ
Z
th(j-mb)
(K/W)
0.2
10-1
0.1
0.05
0.02
tp
10-2
P
δ =
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
2.4
3
4
Fig. 10; Fig. 11
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
VGSth
1
-
-
-
-
V
V
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
4.5
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 100 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
20
IGSS
2
2
100
100
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
16.95 22.6
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12
-
11.18 14.9
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12
4.5
0.36
6.4
8.5
RG
gate resistance
f = 1 MHz
0.71
1.42
PSMN8R5-100PS
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Product data sheet
17 October 2013
5 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Dynamic characteristics
QG(tot) total gate charge
QGS
Parameter
Conditions
Min
Typ
Max
Unit
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
-
111
24
-
-
-
nC
nC
nC
gate-source charge
QGS(th)
pre-threshold gate-
source charge
16
QGS(th-pl)
post-threshold gate-
source charge
-
8
-
nC
QGD
gate-drain charge
-
-
33
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 15 A; VDS = 50 V; Fig. 14; Fig. 15
4.4
Ciss
Coss
Crss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17
-
-
-
5512
380
-
-
-
pF
pF
pF
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 17
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17
256
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
20
35
87
43
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18
-
-
-
0.82
53
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 50 V
Qr
recovered charge
124
PSMN8R5-100PS
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Product data sheet
17 October 2013
6 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah739
003aak421
240
20
6
V
(V) = 10
GS
I
R
D
DSon
5.5
(A)
(m
)
Ω
180
15
10
5
5
120
60
0
4.5
4
0
0
2
4
6
0
5
10
15
20
V
(V)
V
(V)
DS
GS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aak425
003aah742
120
250
ID
g
fs
(A)
(S)
200
150
100
90
60
30
0
T = 175
j
C
°
T = 25 C
°
j
50
0
0
80
160
240
320
400
0
2
4
6
8
10
I
(A)
VGS (V)
D
Fig. 8. Forward transconductance as a function of
drain current; typical values
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN8R5-100PS
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Product data sheet
17 October 2013
7 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah027
003aah028
-1
5
10
V
I
GS(th)
D
(V)
(A)
max
-2
4
10
typ
max
min
-3
-4
-5
-6
typ
3
10
10
10
10
min
2
1
0
-60
0
60
120
180
0
2
4
6
V
(V)
T ( C)
°
GS
j
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature gate-source voltage
003aag818
003aak422
3
25
R
DSon
a
(m
)
Ω
5.5
4.5
5
2.4
1.8
1.2
0.6
0
20
15
10
5
6
V
(V) = 10
GS
0
0
80
160
240
-60
0
60
120
180
I (A)
°
Tj ( C)
D
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN8R5-100PS
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Product data sheet
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8 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak426
10
V
VGS
DS
(V)
I
D
8
V
GS(pl)
20 V
6
80 V
VDS =50 V
V
GS(th)
GS
V
4
2
0
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
0
40
80
120
QG (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aak423
003aak424
4
3
2
10
12000
C
(pF)
C
(pF)
C
iss
C
iss
8000
10
C
rss
C
C
oss
rss
4000
0
10
-1
2
0
4
8
12
10
1
10
10
V
(V)
V
(V)
DS
GS
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN8R5-100PS
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Product data sheet
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NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah749
400
I
S
(A)
320
240
160
80
T = 175 C
°
j
T = 25 C
°
j
0
0
0.4
0.8
1.2
V
1.6
(V)
SD
Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN8R5-100PS
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Product data sheet
17 October 2013
10 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 19. Package outline TO-220AB (SOT78)
PSMN8R5-100PS
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Product data sheet
17 October 2013
11 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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[2] The term 'short data sheet' is explained in section "Definitions".
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
12 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
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the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
13 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 11
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 October 2013
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
14 / 14
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