PSMN3R9-60PS [NXP]
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78; 在SOT78 N沟道60 V , 3.9英里©标准级MOSFET型号: | PSMN3R9-60PS |
厂家: | NXP |
描述: | N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 |
文件: | 总13页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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A
0
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PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
1 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Standard level gate
•
•
•
3. Applications
Battery-powered tools
Load switching
Motor control
•
•
•
•
Uninterruptible power supplies
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
-
-
-
-
-
[1]
130
263
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.94
3.9
mΩ
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
103
33
-
-
nC
nC
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
-
-
283
mJ
source avalanche
energy
[1] Continuous current is limited by package.
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN3R9-60PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN3R9-60PS
PSMN3R9-60PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
60
V
-20
20
V
ID
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
[1]
-
-
-
130
127
705
A
A
IDM
peak drain current
A
PSMN3R9-60PS
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Product data sheet
1 February 2013
2 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Symbol
Ptot
Parameter
Conditions
Min
-
Max
263
175
175
260
Unit
W
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
-
°C
Tj
°C
Tsld(M)
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
130
705
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
-
283
mJ
[1] Continuous current is limited by package.
003aak454
03aa16
200
160
120
80
120
I
D
(A)
P
der
(%)
(1)
80
40
40
0
0
0
30
60
90
120
150
T (°C)
180
0
50
100
150
200
j
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R9-60PS
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Product data sheet
1 February 2013
3 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
003aak455
3
2
10
I
AL
(A)
10
(1)
(2)
10
1
-3
10
-2
-1
10
10
1
AL
10
t
(ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
003aak456
103
I
D
(A)
tp =10 µs
Limit RDSon = VDS / ID
102
100 µs
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
102
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.49
0.57
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
vertical in still air
-
60
-
K/W
PSMN3R9-60PS
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Product data sheet
1 February 2013
4 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
003aah108
1
= 0.5
δ
Z
th(j-mb)
(K/W)
0.2
10-1
0.1
0.05
0.02
tp
10-2
P
δ =
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
60
54
2.4
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
4.5
IDSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.07
2
IGSS
100
100
3.9
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
2.94
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
-
-
8.5
1.4
mΩ
Ω
RG
gate resistance
f = 1 MHz
0.35
0.7
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
-
-
103
-
-
nC
nC
25.1
PSMN3R9-60PS
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Product data sheet
1 February 2013
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
Symbol
QGD
Parameter
Conditions
Min
Typ
33
Max
Unit
nC
pF
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
-
-
-
Ciss
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
5600
740
460
Coss
pF
Crss
reverse transfer
capacitance
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
25.3
41.4
62.7
45
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.8
39
51
1.2
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V
Qr
recovered charge
003aah394
003aah395
360
15
6
10
R
DSon
8
I
D
(m
)
(A)
Ω
240
10
5.5
120
5
5
V
(V) = 4.5
GS
0
0
0
1
2
3
4
(V)
0
5
10
15
20
V
V
(V)
DS
GS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
PSMN3R9-60PS
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Product data sheet
1 February 2013
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
003aah027
003aah397
400
5
V
GS(th)
(V)
I
D
(A)
max
4
300
typ
3
200
min
2
T = 175
C
°
j
100
0
1
T = 25
j
C
°
0
-60
0
2
4
6
8
0
60
120
180
V
(V)
GS
T ( C)
°
j
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah028
003aah400
-1
10
15
I
D
(A)
R
DSon
-2
(m
)
Ω
10
5
5.5
6
10
typ
max
min
-3
-4
-5
-6
10
10
10
10
5
8
V
(V) = 10
GS
0
0
120
240
360
0
2
4
6
I (A)
D
V
(V)
GS
Tj = 25 °C; tp = 300 μs
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
PSMN3R9-60PS
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Product data sheet
1 February 2013
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
003aag814
2.4
V
DS
a
I
D
1.8
V
GS(pl)
V
GS(th)
GS
1.2
0.6
0
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
-60
0
60
120
180
°
Tj ( C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aah402
003aah403
10
104
V
GS
C
(pF)
(V)
C
iss
8
14 V
6
V
= 48V
DS
103
C
4
2
0
oss
rss
C
102
10-1
0
40
80
120
1
10
102
Q
(nC)
V
(V)
DS
G
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN3R9-60PS
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Product data sheet
1 February 2013
8 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
003aah404
360
I
S
(A)
240
T = 175 C
°
j
120
T = 25 C
°
j
0
0
0.5
1
1.5
V
(V)
SD
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN3R9-60PS
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Product data sheet
1 February 2013
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 17. Package outline TO-220AB (SOT78)
PSMN3R9-60PS
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Product data sheet
1 February 2013
10 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Applications — Applications that are described herein for any of these
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the accuracy or completeness of information included herein and shall have
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information included herein and shall have no liability for the consequences
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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PSMN3R9-60PS
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Product data sheet
1 February 2013
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NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
grant, conveyance or implication of any license under any copyrights, patents
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN3R9-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
1 February 2013
12 / 13
NXP Semiconductors
PSMN3R9-60PS
N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 February 2013
PSMN3R9-60PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
1 February 2013
13 / 13
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