PMBT3906,215 [NXP]
PMBT3906 - PNP switching transistor TO-236 3-Pin;型号: | PMBT3906,215 |
厂家: | NXP |
描述: | PMBT3906 - PNP switching transistor TO-236 3-Pin PC 开关 光电二极管 晶体管 |
文件: | 总11页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMBT3906
PNP switching transistor
Rev. 06 — 2 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMBT3904.
1.2 Features and benefits
Collector-emitter voltage VCEO = −40 V
Collector current capability IC = −200 mA
1.3 Applications
General amplification and switching
1.4 Quick reference data
Table 1.
Symbol
VCEO
Quick reference data
Parameter
Conditions
Min
Typ
Max
−40
Unit
V
collector-emitter voltage open base
collector current
-
-
-
-
IC
−200
mA
2. Pinning information
Table 2.
Pinning
Description
Pin
1
Simplified outline
Graphic symbol
base
3
3
2
emitter
collector
3
1
1
2
2
006aab259
PMBT3906
NXP Semiconductors
PNP switching transistor
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PMBT3906
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMBT3906
*2A
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
−40
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
−40
V
emitter-base voltage
collector current
open collector
-
−6
V
-
−200
−200
−100
250
mA
mA
mA
mW
°C
°C
°C
ICM
peak collector current
peak base current
-
IBM
-
[1]
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
Tj
-
150
Tamb
Tstg
−65
−65
+150
+150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
2 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
500
K/W
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
ICBO
IEBO
hFE
collector-base cut-off VCB = −30 V; IE = 0 A
current
-
-
−50
nA
emitter-base cut-off VEB = −6 V; IC = 0 A
current
-
-
−50
nA
DC current gain
VCE = −1 V
IC = −0.1 mA
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = −1 mA
80
-
IC = −10 mA
100
300
-
IC = −50 mA
60
IC = −100 mA
30
-
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
-
−250
−400
−850
−950
35
mV
mV
mV
mV
ns
-
VBEsat
base-emitter
saturation voltage
-
-
td
tr
delay time
rise time
ICon = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
-
-
35
ns
ton
ts
turn-on time
storage time
fall time
-
70
ns
-
225
75
ns
tf
-
ns
toff
fT
turn-off time
-
300
-
ns
transition frequency VCE = −20 V;
IC = −10 mA;
250
MHz
f = 100 MHz
Cc
Ce
NF
collector capacitance VCB = −5 V; IE = ie = 0 A;
-
-
-
-
-
-
4.5
10
4
pF
pF
dB
f = 1 MHz
emitter capacitance VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz
noise figure
IC = −100 μA;
VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
3 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
mhc459
006aab845
600
−250
I
C
(mA)
h
I
B
(mA) = −1.5
FE
−200
−1.35
−1.05
(1)
−1.2
−0.9
400
200
0
−150
−100
−0.75
−0.45
−0.6
−0.3
(2)
(3)
−50
−0.15
0
−1
2
3
−10
−1
−10
−10
−10
0
−2
−4
−6
−8
−10
(V)
I
C
(mA)
V
CE
VCE = −1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
mhc461
mhc462
−1200
−1200
V
(mV)
V
BEsat
(mV)
BE
−1000
−1000
−800
−600
−400
−200
(1)
(2)
(1)
(2)
−800
−600
−400
−200
(3)
(3)
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
C
(mA)
I (mA)
C
VCE = −1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. Base-emitter voltage as a function of
collector current; typical values
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
4 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
mhc463
3
−10
V
CEsat
(mV)
(1)
(2)
2
−10
(3)
−10
−10
−1
2
3
−1
−10
−10
−10
I
C
(mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
5 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 6. BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
VI = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance Zi = 50 Ω
Fig 7. Test circuit for switching times
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
6 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 8. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
10000
PMBT3906
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
[1] For further information and the availability of packing methods, see Section 13.
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
7 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
11. Revision history
Table 9.
Revision history
Document ID
PMBT3906_6
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100302
Product data sheet
-
PMBT3906_N_5
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 4 “Marking”: amended
• Table 7 “Characteristics”: F redefined to NF noise figure
• Section 8 “Test information”: added
• Figure 6: added
• Figure 8: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 12 “Legal information”: updated
PMBT3906_N_5
PMBT3906_4
20071004
20040121
19990427
19970505
Product data sheet
Product specification
Product specification
Product specification
-
-
-
-
PMBT3906_4
PMBT3906_3
PMBT3906_CNV_2
-
PMBT3906_3
PMBT3906_CNV_2
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
8 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
9 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBT3906_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 March 2010
10 of 11
PMBT3906
NXP Semiconductors
PNP switching transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 March 2010
Document identifier: PMBT3906_6
相关型号:
PMBT3906MB
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, PLASTIC, LEADLESS, ULTRA SMALL, DFN1006B-3
NXP
©2020 ICPDF网 联系我们和版权申明