PIP3121-A,127 [NXP]

PIP3121-A;
PIP3121-A,127
型号: PIP3121-A,127
厂家: NXP    NXP
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PIP3121-A

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Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic logic level protected  
power MOSFET using TOPFET2  
technology assembled in a 5 pin  
surface mounting plastic package.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Continuous drain source voltage  
Continuous drain current  
Total power dissipation  
Continuous junction temperature  
Drain-source on-state resistance  
50  
40  
107  
150  
20  
V
A
W
˚C  
m  
APPLICATIONS  
RDS(ON)  
General purpose switch for driving  
lamps  
SYMBOL  
PARAMETER  
NOM.  
UNIT  
motors  
solenoids  
heaters  
VPS  
Protection supply voltage  
5
V
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
TrenchMOS output stage with  
low on-state resistance  
Separate input pin for higher  
frequency drive  
PROTECTION SUPPLY  
DRAIN  
5 V logic compatible input  
Separate supply pin for logic  
and protection circuits with low  
operating current  
FLAG  
OC LOAD  
O/V  
DETECT  
CLAMP  
POWER  
Overtemperature protection  
Drain current limiting  
INPUT  
MOSFET  
RIG  
Short circuit load protection  
Latched overload trip state reset  
by the protection pin  
Diagnostic flag pin indicates  
protection supply connected,  
overtemperature condition,overload  
tripped state, or open circuit load  
(detected in the off-state)  
ESD protection on all pins  
Overvoltage clamping  
LOGIC AND  
PROTECTION  
SOURCE  
Fig.1. Elements of the TOPFET.  
PINNING - SOT263B-01  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
mb  
mb  
D
S
input  
flag  
TOPFET  
2
P
F
I
P
3
drain  
4
protection supply  
source  
1 2 3 4 5  
Front view  
MBL267  
5
Fig. 2.  
Fig. 3.  
mb drain  
October 2002  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
Continuous voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
VDS  
Drain source voltage1  
Continuous currents  
Drain current  
VIS = 0 V  
-
-
50  
ID  
VPS = 5 V; Tmb =25˚C  
VPS = 0 V; Tmb =80˚C  
self -  
limited  
40  
5
5
5
A
-
A
II  
IF  
IP  
Input current  
-5  
-5  
-5  
mA  
mA  
mA  
Flag current  
Protection supply current  
Thermal  
Ptot  
Total power dissipation  
Tmb = 25˚C  
-
107  
W
Tstg  
Tj  
Tsold  
Storage temperature  
-55  
-
-
175  
150  
260  
˚C  
˚C  
˚C  
Junction temperature2  
Mounting base temperature  
continuous  
during soldering  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage  
Human body model;  
C = 250 pF; R = 1.5 kΩ  
-
2
kV  
OVERLOAD PROTECTION LIMITING VALUE  
With an adequate protection supply  
connected, TOPFET can protect  
itself from two types of overload -  
overtemperature and short circuit  
load.  
For overload conditions an n-MOS  
The drain current is limited to  
reduce dissipation in case of short  
circuit load. Refer to OVERLOAD  
CHARACTERISTICS.  
transistor turns on between the  
input and source to quickly  
discharge the power MOSFET  
gate capacitance.  
SYMBOL PARAMETER  
Overload protection3  
REQUIRED CONDITION  
protection supply  
PS 4 V  
MIN.  
MAX.  
UNIT  
VDS  
Drain source voltage  
V
0
35  
V
OVERVOLTAGE CLAMPING LIMITING VALUES  
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.  
SYMBOL PARAMETER  
Inductive load turn off  
CONDITIONS  
IDM = 25 A; VDD 20 V  
Tmb = 25˚C  
MIN.  
MAX.  
UNIT  
EDSM  
EDRM  
Non-repetitive clamping energy  
Repetitive clamping energy  
-
-
550  
60  
mJ  
mJ  
Tmb 95˚C; f = 250 Hz  
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.  
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.  
3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously  
latched, it would be reset by this condition.  
October 2002  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
THERMAL CHARACTERISTIC  
SYMBOL PARAMETER  
Thermal resistance  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Junction to mounting base  
-
-
0.94  
1.17  
K/W  
OUTPUT CHARACTERISTICS  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.  
SYMBOL PARAMETER  
Off-state  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VIS = 0 V  
V(CL)DSS  
Drain-source clamping voltage ID = 10 mA  
IDM = 5 A; tp 300 µs; δ ≤ 0.01  
VPS = 0 V; VDS = 40 V  
50  
50  
-
70  
70  
V
V
60  
IDSS  
Drain source leakage current1  
-
-
-
100  
10  
µA  
µA  
Tmb = 25˚C  
0.1  
On-state  
tp 300 µs; δ ≤ 0.01; VPS 4 V  
RDS(ON)  
Drain-source resistance  
IDM = 15 A; VIS 4.4 V  
-
-
-
15  
40  
20  
mΩ  
mΩ  
Tmb = 25˚C  
INPUT CHARACTERISTICS  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.  
SYMBOL PARAMETER  
Normal operation  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VIS(TO)  
Input threshold voltage2  
ID = 1 mA  
0.6  
1.1  
-
2.6  
2.1  
V
V
Tmb = 25˚C  
1.6  
IIS  
Input current  
VIS = 5 V  
II = 1 mA  
-
5.5  
-
16  
6.4  
1.7  
100  
8.5  
-
µA  
V
V(CL)IS  
RIG  
Input clamping voltage  
Internal series resistance3  
Overload protection latched  
Input current  
to gate of power MOSFET  
PS 4 V  
VIS = 5 V  
kΩ  
V
IISL  
1
2.7  
4
mA  
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state  
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.  
2 The measurement method is simplified if VPS = 0 V, in order to distinguish ID from IDSP. Refer to OPEN CIRCUIT LOAD DETECTION  
CHARACTERISTICS.  
3 This is not a directly measurable parameter.  
October 2002  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
PROTECTION SUPPLY CHARACTERISTICS  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C.  
SYMBOL PARAMETER  
Protection & detection  
Threshold voltage1  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VPSF  
IF = 100 µA; VDS = 5 V  
2.5  
3.45  
4
V
Normal operation or  
protection latched  
Supply current  
IPS, IPSL  
V(CL)PS  
VPS = 4.5 V  
IP = 1.5 mA  
-
210  
6.5  
450  
8.5  
µA  
Clamping voltage  
5.5  
V
Overload protection latched  
VPSR  
tpr  
Reset voltage  
Reset time  
1
10  
1.8  
45  
3
120  
V
µs  
VPS 1 V  
OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS  
An open circuit load condition can be detected while the TOPFET is in the off-state. Refer to TRUTH TABLE.  
VPS = 5 V. Limits are for -40˚C Tmb 150˚C and typicals are for Tmb = 25˚C.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IDSP  
VDSF  
VISF  
Off-state drain current2  
Drain threshold voltage3  
Input threshold voltage4  
VIS = 0 V; 2 V VDS 40 V  
VIS = 0 V  
0.9  
0.2  
0.3  
1.8  
1
2.7  
2
mA  
V
ID = 100 µA  
0.8  
1.1  
V
OVERLOAD CHARACTERISTICS  
Tmb = 25˚C unless otherwise specified.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Short circuit load protection VPS > 4 V  
ID  
Drain current limiting  
Overload power threshold  
Characteristic time  
VIS = 5 V;  
-40˚C Tmb 150˚C  
40  
90  
62  
84  
A
PD(TO)  
TDSC  
for protection to operate  
which determines trip time5  
220  
500  
330  
700  
W
µs  
250  
Overtemperature protection  
VPS = 5 V  
Tj(TO)  
Threshold temperature  
from ID 4 A or VDS > 0.2 V  
150  
170  
-
˚C  
1 When VPS is less than VPSF the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.  
2 The drain source current which flows in a normal load when the protection supply is high and the input is low.  
3 If VDS < VDSF then the flag indicates open circuit load.  
4 For open circuit load detection, VIS must be less than VISF  
.
5 Trip time td sc varies with overload dissipation PD according to the formula td sc ~ TDSC / ln[ PD / PD(TO)].  
October 2002  
4
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
TRUTH TABLE  
For normal, open-circuit load and overload conditions or inadequate protection supply voltage.  
Assumes proper external pull-up for flag pin. Refer to FLAG CHARACTERISTICS.  
CONDITION  
PROTECTION  
INPUT  
FLAG  
OUTPUT  
Normal on-state  
Normal off-state  
Open circuit load  
Open circuit load  
Short circuit load1  
Over temperature  
1
1
0
ON  
1
1
1
1
1
0
0
0
1
0
1
X
1
0
0
0
1
1
1
1
1
OFF  
ON  
OFF  
OFF  
OFF  
ON  
Low protection supply voltage  
Low protection supply voltage  
OFF  
KEY 0equals low  
1equals high  
Xequals dont care.  
FLAG CHARACTERISTICS  
The flag is an open drain transistor which requires an external pull-up circuit.  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C.  
SYMBOL PARAMETER  
Flag ‘low’  
CONDITIONS  
normal operation; VPS = 5 V  
IF = 100 µA  
MIN. TYP. MAX. UNIT  
VFSF  
IFSF  
Flag voltage  
-
-
0.8  
10  
1
-
V
Flag saturation current  
Flag ‘high’  
VFS = 5 V  
mA  
overload or fault  
VFS = 5 V  
IFSO  
Flag leakage current  
Flag clamping voltage  
Application information  
-
0.1  
6.2  
10  
µA  
V(CL)FS  
IF = 100 µA  
5.5  
8.5  
V
RF  
Suitable external pull-up  
resistance  
VFF = 5 V  
-
47  
-
kΩ  
SWITCHING CHARACTERISTICS  
Tmb = 25˚C; RI = 50 ; RIS = 50 ; VDD = 15 V; resistive load RL = 10 .  
SYMBOL PARAMETER CONDITIONS  
MIN. TYP. MAX. UNIT  
td on  
tr  
td off  
tf  
Turn-on delay time  
Rise time  
VIS: 0 V  
VIS: 5 V  
5 V  
0 V  
-
-
-
-
1.8  
3.5  
11  
5
5
8
µs  
µs  
µs  
µs  
Turn-off delay time  
Fall time  
30  
12  
1 In this condition the protection circuit is latched. To reset the latch the protection pin must be taken low. Refer to PROTECTION SUPPLY  
CHARACTERISTICS.  
October 2002  
5
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
MECHANICAL DATA  
Plastic single-ended package; heatsink mounted; 1 mounting hole;  
SOT263B-01  
5-lead TO-220 lead form option  
E
p
A
1
A
p
1
q
D
1
mounting  
base  
D
L
3
R
L
1
L
L
4
m
L
2
R
Q
1
5
e
b
w
M
c
Q
1
Q
2
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(2)  
L
4
(1)  
b
D
A
A
c
D
E
UNIT  
mm  
e
L
L
L
m
p
p
q
Q
Q
Q
2
R
w
L
1
1
1
2
3
1
1
max.  
4.5 1.39 0.85 0.7 15.8 6.4 10.3  
4.1 1.27 0.70 0.4 15.2 5.9 9.7  
9.8 5.9 5.2 2.4  
9.7 5.3 5.0 1.6  
0.8 3.8 4.3 3.0  
0.6 3.6 4.1 2.7  
1.7  
0.5  
2.0 4.5 8.2 0.5 0.4  
Notes  
1. Terminal dimensions are uncontrolled in this zone.  
2. Positional accuracy of the terminals is controlled in this zone.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
5-lead (option)  
TO-220  
01-01-11  
SOT263B-01  
Fig.4. SOT263B package1 leadform 263B-01, pin 3 connected to mounting base.  
1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass: 2 g  
October 2002  
6
Rev 1.000  
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3121-A  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS1  
PRODUCT  
DEFINITIONS  
STATUS2  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
Production  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product  
Product data  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2002  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
1 Please consult the most recently issued datasheet before initiating or completing a design.  
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is  
available on the Internet at URL http://www.semiconductors.philips.com.  
October 2002  
7
Rev 1.000  

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