PHP34NQ11T_技术文档

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Rev. 01 — 17 May 2004

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

■ Low on-state resistance

■ Low thermal resistance.

1.3 Applications

■ DC-to-DC converters

■ Switched-mode power supplies.

1.4 Quick reference data

■ V_DS≤ 110 V

■ P_tot≤ 136 W

■ I_D≤ 35 A

■ R_DSon≤ 40 mΩ.

2. Pinning information

Table 1:

Pinning - SOT78 (TO-220AB), simpliﬁed outline and symbol

Simpliﬁed outline

Pin Description

Symbol

1

2

3

gate (g)

d

mb

drain (d)

source (s)

g

mb mounting base;

connected to drain (d)

s

mbb076

MBK106

1

2 3

SOT78 (TO-220AB)

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

3. Ordering information

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PHP34NQ11T

TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78

4. Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

110

±20

35

Unit

V

V_DS

V_DGR

V_GS

I_D

drain-source voltage (DC)

25 °C ≤ T_j≤ 175 °C

-

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

-

V

-

V

T_mb= 25 °C; V_GS= 10 V; Figure 2 and 3

T_mb= 100 °C; V_GS= 10 V; Figure 2

T_mb= 25 °C; pulsed; t_p≤ 10 µs; Figure 3

T_mb= 25 °C; Figure 1

-

A

-

25

A

I_DM

P_tot

T_stg

T_j

peak drain current

-

140

136

+175

A

total power dissipation

storage temperature

junction temperature

-

W

°C

−55

Source-drain diode

I_S

source (diode forward) current (DC) T_mb= 25 °C

-

35

A

I_SM

peak source (diode forward) current T_mb= 25 °C; pulsed; t_p≤ 10 µs

140

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

unclamped inductive load; I_D= 34 A;

t_p= 0.05 ms; V_DD≤ 100 V; R_GS= 50 Ω;

V_GS= 10 V; starting at T_j= 25 °C

-

115

mJ

9397 750 13184

Product data

Rev. 01 — 17 May 2004

2 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03aa16

03aa24

120

I_der

(%)

P_der

(%)

80

40

0

40

0

50

100

150

200

_mb(°C)

0

50

100

150

200

T_mb( C)

°

T

P_tot

I_D

P_der

=

× 100%

I_der

=

× 100%

-----------------------

-------------------

P

I

°

tot(25 C)

D(25 C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03ao71

3

10

I

D

(A)

Limit R

= V

/ I

DS D

DSon

2

10

t

= 10 s

µ

p

100

s

µ

10

DC

1 ms

10 ms

100 ms

1

2

3

10

1

10

V

(V)

DS

T_mb= 25 °C; I_DMis single pulse; V_GS= 10 V.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 13184

Product data

Rev. 01 — 17 May 2004

3 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

-

Max Unit

R_th(j-mb)thermal resistance from junction to mounting base Figure 4

-

1.1

-

K/W

R_th(j-a)

thermal resistance from junction to ambient

vertical in still air

60

5.1 Transient thermal impedance

03ao70

10

Z

th(j-mb)

(K/W)

1

= 0.5

δ

0.2

0.1

-1

10

t

p

P

0.05

δ =

T

0.02

t

p

single pulse

T

-2

10

-5

-4

10

-3

-2

10

-1

10

1e-6

10

1

t

p

(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 13184

Product data

Rev. 01 — 17 May 2004

4 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

6. Characteristics

Table 5:

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

V_(BR)DSSdrain-source breakdown voltage

I_D= 250 µA; V_GS= 0 V

T_j= 25 °C

110

99

-

V

T_j= −55 °C

V_GS(th)

gate-source threshold voltage

drain-source leakage current

I_D= 1 mA; V_DS= V_GS; Figure 9 and 10

T_j= 25 °C

2

1

-

3

-

4

V

T_j= 175 °C

-

T_j= −55 °C

-

4.4

I_DSS

V_DS= 100 V; V_GS= 0 V

T_j= 25 °C

-

10

µA

nA

T_j= 175 °C

-

500

100

I_GSS

gate-source leakage current

V_GS= ±10 V; V_DS= 0 V

V_GS= 10 V; I_D= 17 A; Figure 7 and 8

T_j= 25 °C

10

R_DSon

drain-source on-state resistance

-

35

-

40

mΩ

T_j= 175 °C

108

Dynamic characteristics

Q_g(tot)

Q_gs

Q_gd

C_iss

C_oss

C_rss

t_d(on)

t_r

total gate charge

gate-source charge

gate-drain (Miller) charge

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

I_D= 34 A; V_DD= 80 V; V_GS= 10 V;

Figure 13

-

40

-

nC

pF

ns

7

18

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

Figure 11

1700

230

140

12

V_DD= 50 V; R_L= 1.5 Ω;

V_GS= 10 V; R_G= 5.6 Ω

55

t_d(off)

t_f

turn-off delay time

fall time

48

38

Source-drain diode

V_SD

t_rr

source-drain (diode forward) voltage I_S= 17 A; V_GS= 0 V; Figure 12

-

0.85 1.5

V

reverse recovery time

recovered charge

I_S= 17 A; dI_S/dt = −100 A/µs; V_GS= 0 V

76

-

ns

nC

Q_r

240

9397 750 13184

Product data

Rev. 01 — 17 May 2004

5 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03ao72

03ao74

50

40

10 V 8 V

I

T = 25 C

°

D

(A)

40

V

> I x R

D

j

DS

DSon

I

D

(A)

6 V

30

20

10

0

175 C

°

T = 25 C

°

j

20

10

0

5.4 V

5.2 V

5 V

4.8 V

4.6 V

V

= 4.4 V

GS

0

0.5

1

1.5

2

0

2

4

6

8

V

(V)

V

(V)

DS

GS

T_j= 25 °C

T_j= 25 °C and 175 °C; V_DS> I_Dx R_DSon

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

03aa29

03ao73

3

0.1

5 V 5.2 V

4.8 V

5.4 V

R

T = 25 ˚C

DSon

j

(

)

Ω

a

0.08

0.06

0.04

0.02

0

2

6V

8 V

1

0

V

= 10 V

GS

40

0

10

20

30

50

-60

0

60

120

180

I

D

(A)

T ( C)

°

j

T_j= 25 °C

R_DSon

a =

----------------------------

R_{DSon(25 C)}

°

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 13184

Product data

Rev. 01 — 17 May 2004

6 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03aa32

03aa35

5

V_GS(th)

(V)

10^-1

I_D

(A)

10^-2

4

max

min

typ

max

3

10^-3

10^-4

10^-5

10^-6

typ

min

2

1

0

-60

0

60

120

180

0

2

4

6

V

_GS(V)

T ( C)

°

j

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= 5 V

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03ao76

4

10

C

(pF)

C

iss

3

10

C

oss

2

10

C

rss

10

-1

2

10

1

10

V

(V)

DS

V_GS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 13184

Product data

Rev. 01 — 17 May 2004

7 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

03ao75

03ao77

50

I

15

I

= 34 A

V

= 0 V

S

D

GS

(A)

40

V

GS

T = 25 ˚C

j

(V)

10

30

20

10

0

80 V

V

= 20 V

DD

175 C

°

T = 25 C

°

j

5

0

0.5

1

1.5

0

20

40

60

Q

(nC)

V

(V)

G

SD

T_j= 25 °C and 175 °C; V_GS= 0 V

I_D= 34 A; V_DD= 20 V and 80 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

9397 750 13184

Product data

Rev. 01 — 17 May 2004

8 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

E

p

A

1

q

mounting

base

D

1

D

(1)

L

2

1

Q

b

1

L

1

2

3

b

c

e

0

5

10 mm

scale

DIMENSIONS (mm are the original dimensions)

b

L

max.

(1)

2

e

A

b

D

E

L

D

L

1

A

c

UNIT

p

q

Q

1

4.5

4.1

1.39

1.27

0.9

0.7

1.3

1.0

0.7

0.4

15.8

15.2

6.4

5.9

10.3

9.7

15.0

13.5

3.30

2.79

3.8

3.6

3.0

2.7

2.6

2.2

mm

3.0

2.54

Note

1. Terminals in this zone are not tinned.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SC-46

00-09-07

01-02-16

SOT78

3-lead TO-220AB

Fig 14. SOT78 (TO-220AB).

9397 750 13184

Product data

Rev. 01 — 17 May 2004

9 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

8. Revision history

Table 6:

Revision history

CPCN

Rev Date

Description

01 20040517

-

Product data (9397 750 13184)

9397 750 13184

Product data

Rev. 01 — 17 May 2004

10 of 12

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

9. Data sheet status

Level Data sheet status^[1]

Product status^[2][3]

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

12. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.

Fax: +31 40 27 24825

11 of 12

9397 750 13184

Product data

Rev. 01 — 17 May 2004

PHP34NQ11T

N-channel TrenchMOS™ standard level FET

Philips Semiconductors

Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Transient thermal impedance . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3

4

5

5.1

6

7

8

9

10

11

12

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 17 May 2004

Document order number: 9397 750 13184


型号：	PHP34NQ11T
厂家：	NXP
描述：	N-channel TrenchMOS⑩ standard level FET N沟道的TrenchMOS ™标准水平FET
文件：	总12页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PHP34NQ11T [NXP]

相关型号：

PHP34NQ11T,127

PHP36N03LT

PHP36N03LT,127

PHP36N06E

PHP37N06

PHP37N06LT

PHP37N06T

PHP3N20E

PHP3N20E

PHP3N20E127

PHP3N20L

PHP3N40E