PESD5Z2.5T/R [NXP]
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,2.5V V(RWM),SOD-523;
| 型号： | PESD5Z2.5T/R |
| 厂家： | 
NXP |
| 描述： | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,2.5V V(RWM),SOD-523 二极管 |
| 文件： | 总17页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
Rev. 02 — 4 April 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package
designed to protect one signal line from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
NXP
Configuration
JEITA
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
SOD523
SC-79
single
1.2 Features
I ESD protection of one line
I Low leakage current: IRM < 1 nA
I ESD protection up to 30 kV
I Low diode capacitance
I Max. peak pulse power: PPP = 260 W
I Low clamping voltage: VCL = 15 V
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 20 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I FireWire
I High-speed data lines
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
-
-
-
-
-
-
-
-
-
-
-
-
2.5
3.3
5.0
6.0
7.0
12.0
V
V
V
V
V
V
Cd
diode capacitance
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
f = 1 MHz; VR = 0 V
-
-
-
-
-
-
229
172
89
300
200
150
150
150
75
pF
pF
pF
pF
pF
pF
78
69
35
2. Pinning information
Table 3.
Pinning
Pin
1
Description
cathode
Simplified outline
Symbol
[1]
2
anode
2
1
1
2
006aaa152
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Type number Package
Name
Description
Version
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
SC-79
plastic surface-mounted package; 2 leads
SOD523
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
2 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
4. Marking
Table 5.
Marking codes
Type number
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
Marking code
N7
N8
N9
NA
NB
NC
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
PPP
Parameter
Conditions
Min
Max
Unit
[1][2]
peak pulse power
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
tp = 8/20 µs
-
-
-
-
-
-
260
260
180
180
180
200
W
W
W
W
W
W
[1][2]
IPP
peak pulse current
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
tp = 8/20 µs
-
-
-
-
-
-
20
20
10
10
10
6
A
A
A
A
A
A
Per device
Tj
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
Tstg
−65
−65
+150
+150
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
3 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
Table 7.
ESD maximum ratings
Symbol Parameter
Per diode
Conditions
Min
Max Unit
VESD
electrostatic discharge voltage
PESD5Zx series
[1][2]
IEC 61000-4-2
-
30
kV
(contact discharge)
machine model
-
-
400
10
V
MIL-STD-883 (human
body model)
kV
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2.
Table 8.
ESD standards compliance
Standard
Per diode
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
> 4 kV
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
001aaa630
120
100 %
90 %
100 % I ; 8 µs
PP
I
PP
(%)
80
−t
e
50 % I ; 20 µs
PP
40
10 %
t
t = 0.7 ns to 1 ns
r
0
30 ns
60 ns
0
10
20
30
40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
IEC 61000-4-5
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
4 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
-
-
-
-
-
-
-
-
-
-
-
-
2.5
3.3
5.0
6.0
7.0
12.0
V
V
V
V
V
V
IRM
reverse leakage current
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
VRWM = 2.5 V
VRWM = 3.3 V
VRWM = 5.0 V
VRWM = 6.0 V
VRWM = 7.0 V
VRWM = 12.0 V
IR = 1 mA
-
-
-
-
-
-
0.5
8
6
µA
nA
nA
nA
nA
nA
50
50
10
10
10
5
2
< 1
< 1
VBR
breakdown voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
4
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
5
6.2
6.8
7.5
14.1
Cd
diode capacitance
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
f = 1 MHz; VR = 0 V
-
-
-
-
-
-
229
172
89
300
200
150
150
150
75
pF
pF
pF
pF
pF
pF
78
69
35
[1][2]
VCL
clamping voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
IPP = 5 A
-
-
-
-
-
-
8
9
V
V
V
V
V
V
8
10
13
13
15
30
12
12
14
27
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
5 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
Table 9.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
VCL clamping voltage
Min
Typ
Max
Unit
[1][2]
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
IPP = 20 A
IPP = 20 A
IPP = 10 A
IPP = 10 A
IPP = 10 A
IPP = 6 A
-
-
-
-
-
-
-
-
-
-
-
-
15
18
18
18
19
35
V
V
V
V
V
V
rdif
differential resistance
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
IR = 5 mA
-
-
-
-
-
-
-
-
-
-
-
-
60
10
15
15
15
40
Ω
Ω
Ω
Ω
Ω
Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
006aab056
001aaa193
4
3
2
10
1.2
P
PP
(W)
P
PP
P
PP(25°C)
10
0.8
(1)
(2)
10
0.4
10
1
0
2
3
4
1
10
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C
(1) PESD5Z2.5; PESD5Z3.3
(2) PESD5Z5.0; PESD5Z6.0; PESD5Z7.0; PESD5Z12
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
6 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
006aab057
006aab058
250
100
C
d
C
d
(pF)
(pF)
200
80
150
100
50
60
40
20
0
(1)
(2)
(1)
(2)
(3)
(3)
0
0
1
2
3
4
5
0
4
8
12
V
(V)
V (V)
R
R
f = 1 MHz; Tamb = 25 °C
(1) PESD5Z2.5
f = 1 MHz; Tamb = 25 °C
(1) PESD5Z6.0
(2) PESD5Z3.3
(3) PESD5Z5.0
(2) PESD5Z7.0
(3) PESD5Z12
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
I
006aab059
10
I
R
I
R(25°C)
−V
−V
−V
V
CL
BR
RWM
−I
−I
RM
R
1
−
+
P-N
−1
−I
10
PP
−100
−50
0
50
100
150
T (°C)
j
006aaa407
PESD5Z2.5; VRWM = 2.5 V
PESD5Z3.3; VRWM = 3.3 V
IR is less than 50 nA at 150 °C for:
PESD5Z5.0; VRWM = 5.0 V
PESD5Z6.0; VRWM = 6.0 V
PESD5Z7.0; VRWM = 7.0 V
PESD5Z12; VRWM = 12.0 V
Fig 7. Relative variation of reverse current as a
function of junction temperature; typical values
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
7 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
ESD TESTER
acc. to IEC 61000-4-2
= 150 pF; R = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
C
Z
Z
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 100 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aab060
Fig 9. ESD clamping test setup and waveforms for PESD5Z2.5
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
8 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
006aab061
006aab062
Fig 10. PESD5Z3.3: Clamped +8 kV ESD pulse
waveform (IEC 61000-4-2 network)
Fig 11. PESD5Z3.3: Clamped −8 kV ESD pulse
waveform (IEC 61000-4-2 network)
vertical scale = 20 V/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
horizontal scale = 100 ns/div
GND
GND
006aab063
006aab064
Fig 12. PESD5Z5.0: Clamped +8 kV ESD pulse
waveform (IEC 61000-4-2 network)
Fig 13. PESD5Z5.0: Clamped −8 kV ESD pulse
waveform (IEC 61000-4-2 network)
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
9 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
006aab065
006aab066
Fig 14. PESD5Z6.0: Clamped +8 kV ESD pulse
waveform (IEC 61000-4-2 network)
Fig 15. PESD5Z6.0: Clamped −8 kV ESD pulse
waveform (IEC 61000-4-2 network)
vertical scale = 20 V/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
horizontal scale = 100 ns/div
GND
GND
006aab067
006aab068
Fig 16. PESD5Z7.0: Clamped +8 kV ESD pulse
waveform (IEC 61000-4-2 network)
Fig 17. PESD5Z7.0: Clamped −8 kV ESD pulse
waveform (IEC 61000-4-2 network)
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
10 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
006aab069
006aab070
Fig 18. PESD5Z12: Clamped +8 kV ESD pulse
waveform (IEC 61000-4-2 network)
Fig 19. PESD5Z12: Clamped −8 kV ESD pulse
waveform (IEC 61000-4-2 network)
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
11 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD5Zx series is designed for the protection of one unidirectional data or signal line
from the damage caused by ESD and surge pulses. The device may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESD5Zx series provides a surge capability of 260 W per line for an 8/20 µs waveform.
line to be protected
line to be protected
(positive signal polarity)
(negative signal polarity)
PESD5Zx
PESD5Zx
ground
ground
unidirectional protection of one line
006aab071
Fig 20. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD5Zx as close to the input terminal or connector as possible.
2. The path length between the PESD5Zx and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
12 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
8. Package outline
0.85
0.75
0.65
0.58
1
1.65 1.25
1.55 1.15
2
0.34
0.26
0.17
0.11
Dimensions in mm
02-12-13
Fig 21. Package outline SOD523 (SC-79)
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
8000
10000
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-
-315
-
-115
-
-135
-
-315
-
-115
-
-135
-
-315
-
-115
-
-
-135
-
-315
-115
-
-
-135
-
-315
-115
-
-
-135
-
-315
-
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
13 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
10. Soldering
2.15
0.50 0.60
1.20
solder lands
solder paste
solder resist
occupied area
0.30
0.40
1.80
1.90
mgs343
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 22. Reflow soldering footprint SOD523 (SC-79)
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
14 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
11. Revision history
Table 11. Revision history
Document ID
Release date
20080404
Data sheet status
Change notice
Supersedes
PESD5ZX_SER_2
Modifications:
Product data sheet
-
PESD5ZX_SER_1
• Table 10: Type number updated to PESD5Z12
PESD5ZX_SER_1
20070813
Product data sheet
-
-
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
15 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
16 of 17
PESD5Zx series
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Packing information. . . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 April 2008
Document identifier: PESD5ZX_SER_2
相关型号：
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