PDTC144VK [NXP]

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ; NPN电阻配备晶体管; R1 = 47 kΩ的, R2 = 10 kΩ的
PDTC144VK
型号: PDTC144VK
厂家: NXP    NXP
描述:

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
NPN电阻配备晶体管; R1 = 47 kΩ的, R2 = 10 kΩ的

晶体 小信号双极晶体管 开关 光电二极管
文件: 总11页 (文件大小:139K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PDTC144V series  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
Rev. 04 — 16 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN resistor-equipped transistors.  
Table 1. Product overview  
Type number  
Package  
NXP  
PNP complement  
JEITA  
SC-75  
SC-59A  
SC-101  
SC-43A  
-
PDTC144VE  
PDTC144VK  
PDTC144VM  
PDTC144VS[1]  
PDTC144VT  
PDTC144VU  
SOT416  
SOT346  
SOT883  
SOT54 (TO-92)  
SOT23  
PDTA144VE  
PDTA144VK  
PDTA144VM  
PDTA144VS  
PDTA144VT  
PDTA144VU  
SOT323  
SC-70  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
„ Built-in bias resistors  
„ Reduces component count  
„ Simplifies circuit design  
„ Reduces pick and place costs  
1.3 Applications  
„ General-purpose switching and  
amplification  
„ Circuit drivers  
„ Inverter and interface circuits  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
-
Typ  
-
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
bias resistor ratio  
open base  
-
-
100  
61  
mA  
kΩ  
R1  
33  
0.17  
47  
0.21  
R2/R1  
0.26  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
2. Pinning information  
Table 3.  
Pinning  
Pin  
Description  
Simplified outline  
Symbol  
SOT54  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
1
1
1
1
1
1
2
3
R2  
001aab347  
006aaa145  
SOT54A  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
R1  
R1  
R1  
1
2
R2  
3
001aab348  
006aaa145  
SOT54 variant  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
1
2
3
R2  
001aab447  
006aaa145  
SOT23, SOT323, SOT346, SOT416  
1
2
3
input (base)  
3
3
2
GND (emitter)  
output (collector)  
R2  
1
2
006aaa144  
sym007  
SOT883  
1
2
3
input (base)  
3
2
GND (emitter)  
output (collector)  
R2  
sym007  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
2 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
3. Ordering information  
Table 4.  
Ordering information  
Type number Package  
Name  
Description  
Version  
SOT416  
SOT346  
PDTC144VE  
PDTC144VK  
PDTC144VM  
SC-75  
plastic surface mounted package; 3 leads  
SC-59A plastic surface mounted package; 3 leads  
SC-101  
leadless ultra small plastic package; 3 solder lands; SOT883  
body 1.0 × 0.6 × 0.5 mm  
PDTC144VS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54  
3 leads  
PDTC144VT  
PDTC144VU  
-
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
SOT23  
SC-70  
SOT323  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).  
4. Marking  
Table 5.  
Marking codes  
Type number  
PDTC144VE  
PDTC144VK  
PDTC144VM  
PDTC144VS  
PDTC144VT  
PDTC144VU  
Marking code[1]  
18  
29  
G6  
TC144V  
*AA  
*18  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
3 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
VI  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
50  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
-
-
-
50  
V
open collector  
15  
V
positive  
-
-
-
-
+40  
15  
100  
100  
V
negative  
V
IO  
output current (DC)  
peak collector current  
total power dissipation  
SOT416  
mA  
mA  
ICM  
Ptot  
[1]  
[1]  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
Tamb 25 °C  
-
150  
250  
250  
500  
250  
200  
+150  
150  
+150  
mW  
mW  
mW  
mW  
mW  
mW  
°C  
SOT346  
-
[2][3]  
[1]  
SOT883  
-
SOT54  
-
[1]  
SOT23  
-
[1]  
SOT323  
-
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
-
°C  
Tamb  
65  
°C  
[1] Refer to standard mounting conditions.  
[2] Reflow soldering is the only recommended soldering method.  
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.  
6. Thermal characteristics  
Table 7.  
Symbol Parameter  
Rth(j-a) thermal resistance from  
Thermal characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
in free air  
junction to ambient  
[1]  
[1]  
SOT416  
-
-
-
-
-
-
-
-
-
-
-
-
833  
500  
500  
250  
500  
625  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
SOT346  
[2][3]  
[1]  
SOT883  
SOT54  
[1]  
SOT23  
[1]  
SOT323  
[1] Refer to standard mounting conditions.  
[2] Reflow soldering is the only recommended soldering method.  
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
4 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
7. Characteristics  
Table 8.  
Characteristics  
T
amb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
ICBO  
Min  
Typ  
Max  
Unit  
collector-base cut-off VCB = 50 V; IE = 0 A  
current  
-
-
100  
nA  
ICEO  
collector-emitter  
cut-off current  
VCE = 30 V; IB = 0 A  
-
-
-
-
1
μA  
μA  
VCE = 30 V; IB = 0 A;  
50  
Tj = 150 °C  
IEBO  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
150  
μA  
hFE  
DC current gain  
VCE = 5 V; IC = 5 mA  
40  
-
-
-
-
VCEsat  
collector-emitter  
IC = 10 mA; IB = 0.5 mA  
150  
mV  
saturation voltage  
VI(off)  
VI(on)  
R1  
off-state input voltage VCE = 5 V; IC = 100 μA  
on-state input voltage VCE = 300 mV; IC = 2 mA  
bias resistor 1 (input)  
-
3.1  
3.8  
47  
1
V
6
-
V
33  
0.17  
-
61  
0.26  
2
kΩ  
R2/R1  
Cc  
bias resistor ratio  
0.21  
-
collector capacitance VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
pF  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
5 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
006aaa099  
006aaa100  
3
10  
1
h
FE  
(2) (1)  
V
CEsat  
(V)  
2
10  
(3)  
1  
10  
(1)  
(2)  
(3)  
10  
2  
1
10  
10  
1  
2
2
1
10  
10  
1
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
Fig 1. DC current gain as a function of collector  
current; typical values  
Fig 2. Collector-emitter saturation voltage as a  
function of collector current; typical values  
006aaa101  
006aaa102  
10  
10  
V
V
I(off)  
(V)  
I(on)  
(1)  
(2)  
(1)  
(2)  
(V)  
(3)  
(3)  
1
10  
1
10  
1  
2
1  
1
10  
10  
1
10  
I
(mA)  
I (mA)  
C
C
VCE = 0.3 V  
VCE = 5 V  
(1) Tamb = 40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 3. On-state input voltage as a function of  
collector current; typical values  
Fig 4. Off-state input voltage as a function of  
collector current; typical values  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
6 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
8. Package outline  
3.1  
2.7  
1.3  
1.0  
1.8  
1.4  
0.95  
0.60  
3
0.6  
0.2  
3
0.45  
0.15  
3.0 1.7  
2.5 1.3  
1.75 0.9  
1.45 0.7  
1
2
1
2
0.30  
0.15  
0.25  
0.10  
0.50  
0.35  
0.26  
0.10  
1.9  
1
Dimensions in mm  
04-11-04  
Dimensions in mm  
04-11-11  
Fig 5. Package outline SOT416 (SC-75)  
Fig 6. Package outline SOT346 (SC-59A/TO-236)  
0.62  
0.55  
0.50  
0.46  
0.55  
0.47  
0.45  
0.38  
4.2  
3.6  
3
0.30  
0.22  
0.48  
0.40  
1.02  
0.95  
0.65  
1
2
4.8  
4.4  
2.54  
0.30  
0.22  
1.27  
3
2
1
0.20  
0.12  
5.2  
5.0  
14.5  
12.7  
0.35  
Dimensions in mm  
03-04-03  
Dimensions in mm  
04-11-16  
Fig 7. Package outline SOT883 (SC-101)  
Fig 8. Package outline SOT54 (SC-43A/TO-92)  
0.45  
0.38  
0.45  
0.38  
4.2  
3.6  
4.2  
3.6  
1.27  
0.48  
0.40  
3 max  
1
2.5  
max  
0.48  
0.40  
1
2
3
2
4.8  
4.4  
5.08  
4.8  
4.4  
2.54  
1.27  
2.54  
3
5.2  
5.0  
14.5  
12.7  
5.2  
5.0  
14.5  
12.7  
Dimensions in mm  
04-06-28  
Dimensions in mm  
05-01-10  
Fig 9. Package outline SOT54A  
Fig 10. Package outline SOT54 variant  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
7 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
3.0  
2.8  
1.1  
0.9  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
3
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
2.2 1.35  
2.0 1.15  
1
2
1
2
0.4  
0.3  
0.25  
0.10  
0.48  
0.38  
0.15  
0.09  
1.9  
1.3  
Dimensions in mm  
04-11-04  
Dimensions in mm  
04-11-04  
Fig 11. Package outline SOT23 (TO-236AB)  
Fig 12. Package outline SOT323 (SC-70)  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
5000  
10000  
-135  
-135  
-315  
-
PDTC144VE  
PDTC144VK  
PDTC144VM  
PDTC144VS  
SOT416  
SOT346  
SOT883  
SOT54  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
2 mm pitch, 8 mm tape and reel  
bulk, straight leads  
-115  
-
-115  
-
-
-
-
-412  
SOT54A  
tape and reel, wide pitch  
-
-
-116  
-126  
-
tape ammopack, wide pitch  
bulk, delta pinning  
-
-
SOT54 variant  
SOT23  
-
-112  
PDTC144VT  
PDTC144VU  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
-215  
-115  
-
-
-235  
-135  
SOT323  
[1] For further information and the availability of packing methods, see Section 12.  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
8 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
10. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20091116  
Data sheet status  
Change notice  
Supersedes  
PDTC144V_SER_4  
Modifications:  
Product data sheet  
-
PDTC144V_SER_3  
This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
PDTC144V_SER_3  
PDTC144VT_2  
PDTC144VT_1  
20050215  
20040511  
20040305  
Product data sheet  
Objective data sheet  
Objective data sheet  
-
-
-
PDTC144VT_2  
PDTC144VT_1  
-
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
9 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PDTC144V_SER_4  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 04 — 16 November 2009  
10 of 11  
PDTC144V series  
NXP Semiconductors  
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Packing information . . . . . . . . . . . . . . . . . . . . . 8  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 10  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 16 November 2009  
Document identifier: PDTC144V_SER_4  

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