PDTC123YK_技术文档

PDTC123Y series

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 03 — 24 March 2005

Product data sheet

1. Product proﬁle

1.1 General description

NPN Resistor-Equipped Transistors (RET) family.

Table 1:

Product overview

Type number

Package

Philips

SOT416

SOT346

SOT883

SOT54

PNP complement

JEITA

SC-75

SC-59A

SC-101

SC-43A

-

JEDEC

PDTC123YE

PDTC123YK

PDTC123YM

PDTC123YS^[1]

PDTC123YT

PDTC123YU

-

PDTA123YE

PDTA123YK

PDTA123YM

PDTA123YS

PDTA123YT

PDTA123YU

TO-236

-

TO-92

SOT23

TO-236AB

-

SOT323

SC-70

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

■ Built-in bias resistors

■ Reduces component count

■ Simpliﬁes circuit design

■ Reduces pick and place costs

1.3 Applications

■ General-purpose switching and

■ Circuit drivers

ampliﬁcation

■ Inverter and interface circuits

1.4 Quick reference data

Table 2:

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

-

Typ

-

Max

50

Unit

V

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

-

100

2.86

5.5

mA

kΩ

R1

1.54

3.6

2.2

4.5

R2/R1

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

2. Pinning information

Table 3:

Pinning

Description

Simpliﬁed outline

Symbol

SOT54

1

2

3

input (base)

2

3

output (collector)

GND (emitter)

R1

1

2

3

R2

001aab347

006aaa145

SOT54A

1

2

3

input (base)

2

3

output (collector)

GND (emitter)

R1

1

2

R2

3

001aab348

006aaa145

SOT54 variant

1

2

3

input (base)

2

3

output (collector)

GND (emitter)

R1

1

2

3

R2

001aab447

006aaa145

SOT23; SOT323; SOT346; SOT416

1

2

3

input (base)

3

GND (emitter)

output (collector)

R1

1

R2

1

2

006aaa144

sym007

SOT883

1

2

3

input (base)

1

2

3

2

GND (emitter)

output (collector)

3

R1

1

Transparent

top view

R2

sym007

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

2 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

3. Ordering information

Table 4:

Ordering information

Type number Package

Name

Description

Version

SOT416

SOT346

SOT883

PDTC123YE

PDTC123YK

PDTC123YM

SC-75

plastic surface mounted package; 3 leads

SC-59A

SC-101

leadless ultra small plastic package; 3 solder lands;

body 1.0 × 0.6 × 0.5 mm

PDTC123YS^[1]SC-43A

plastic single-ended leaded (through hole) package; SOT54

3 leads

PDTC123YT

PDTC123YU

-

plastic surface mounted package; 3 leads

SOT23

SC-70

SOT323

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

Table 5:

Marking codes

Type number

PDTC123YE

PDTC123YK

PDTC123YM

PDTC123YS

PDTC123YT

PDTC123YU

Marking code^[1]

19

31

G7

TC123Y

*AL

*19

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

3 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

5. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

V_I

Parameter

Conditions

open emitter

open base

Min

Max

50

5

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

-

V

open collector

V

positive

-

+12

−5

V

negative

V

I_O

output current (DC)

peak collector current

100

mA

I_CM

single pulse;

t_p≤ 1ms

P_tot

total power dissipation

SOT416

T_amb≤ 25 °C

[1]

-

150

250

500

250

200

+150

150

+150

mW

°C

SOT346

-

[2] [3]

[1]

SOT883

-

SOT54

-

[1]

SOT23

-

[1]

SOT323

-

T_stg

T_j

storage temperature

junction temperature

ambient temperature

−65

-

°C

T_amb

−65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

6. Thermal characteristics

Table 7:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

SOT416

SOT346

SOT883

SOT54

-

833

500

250

500

625

K/W

[2] [3]

[1]

SOT23

[1]

SOT323

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

4 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

7. Characteristics

Table 8:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

I_CBOcollector-base cut-off V_CB= 50 V; I_E= 0 A

Min

Typ

Max

Unit

-

100

nA

current

I_CEO

collector-emitter

cut-off current

V_CE= 30 V; I_B= 0 A

-

1

µA

V_CE= 30 V; I_B= 0 A;

50

T_j= 150 °C

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A

-

700

µA

h_FE

DC current gain

V_CE= 5 V; I_C= 5 mA

35

-

V_CEsat

collector-emitter

I_C=10 mA; I_B= 0.5 mA

150

mV

saturation voltage

V_I(off)

V_I(on)

R1

off-state input voltage V_CE= 5 V; I_C= 100 µA

on-state input voltage V_CE= 300 mV; I_C= 20 mA

bias resistor 1 (input)

-

0.75

1.15

2.2

4.5

-

0.3

-

V

2.5

1.54

3.6

-

V

2.86

5.5

2

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

pF

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

5 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

006aaa095

006aaa096

3

10

1

h

FE

(2)

(1)

(3)

V

CEsat

(V)

2

10

−1

10

(1)

(2)

(3)

10

−2

1

10

−1

2

1

10

1

10

I

(mA)

I (mA)

C

V_CE= 5 V

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 1. DC current gain as a function of collector

current; typical values

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa097

006aaa098

10

V

I(on)

V

I(off)

(V)

(1)

(2)

(1)

1

(2)

(3)

−1

10

−1

2

−1

10

1

10

1

10

I

(mA)

I (mA)

C

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 3. On-state input voltage as a function of collector

current; typical values

Fig 4. Off-state input voltage as a function of collector

current; typical values

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

6 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

8. Package outline

3.1

2.7

1.3

1.0

1.8

1.4

0.95

0.60

3

0.6

0.2

3

0.45

0.15

3.0 1.7

2.5 1.3

1.75 0.9

1.45 0.7

1

2

1

2

0.30

0.15

0.25

0.10

0.50

0.35

0.26

0.10

1.9

1

Dimensions in mm

04-11-04

Dimensions in mm

04-11-11

Fig 5. Package outline SOT416 (SC-75)

Fig 6. Package outline SOT346 (SC-59A/TO-236)

0.62

0.55

0.50

0.46

0.55

0.47

0.45

0.38

4.2

3.6

3

0.30

0.22

0.48

0.40

1.02

0.95

0.65

1

2

4.8

4.4

0.30

0.22

2.54

1.27

3

2

1

0.20

0.12

5.2

5.0

14.5

12.7

0.35

Dimensions in mm

03-04-03

Dimensions in mm

04-11-16

Fig 7. Package outline SOT883 (SC-101)

Fig 8. Package outline SOT54 (SC-43A/TO-92)

0.45

0.38

0.45

0.38

4.2

3.6

4.2

3.6

1.27

0.48

0.40

3 max

1

2

3

2.5

0.48

max

0.40

1

4.8

4.4

2

5.08

4.8

4.4

2.54

1.27

3

2.54

5.2

5.0

14.5

12.7

5.2

5.0

14.5

12.7

Dimensions in mm

04-06-28

Dimensions in mm

05-01-10

Fig 9. Package outline SOT54A

Fig 10. Package outline SOT54 variant

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

7 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

3.0

2.8

1.1

0.9

2.2

1.8

1.1

0.8

0.45

0.15

3

0.45

0.15

2.5 1.4

2.1 1.2

2.2 1.35

2.0 1.15

1

2

1

2

0.4

0.3

0.25

0.10

0.48

0.38

0.15

0.09

1.9

1.3

Dimensions in mm

04-11-04

Dimensions in mm

04-11-04

Fig 11. Package outline SOT23 (TO-236AB)

Fig 12. Package outline SOT323 (SC-70)

9. Packing information

Table 9:

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code. ^[1]

Type number

Package

Description

Packing quantity

3000

5000

10000

-135

-315

-

PDTC123YE

PDTC123YK

PDTC123YM

PDTC123YS

SOT416

SOT346

SOT883

SOT54

4 mm pitch, 8 mm tape and reel

2 mm pitch, 8 mm tape and reel

bulk, straight leads

-115

-

-115

-

-412

SOT54A

tape and reel, wide pitch

-

-116

-126

-

tape ammopack, wide pitch

bulk, delta pinning

-

SOT54 variant

SOT23

-

-112

PDTC123YT

PDTC123YU

4 mm pitch, 8 mm tape and reel

-215

-115

-

-235

-135

SOT323

[1] For further information and the availability of packing methods, see Section 14.

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

8 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

10. Revision history

Table 10: Revision history

Document ID

Release date Data sheet status

20050324 Product data sheet

Change notice

Doc. number

Supersedes

PDTC123Y_SER_3

Modiﬁcations:

-

9397 750 14017 PDTC123YT_2

• The types PDTC123YE, PDTC123YK, PDTC123YM, PDTC123YS and PDTC123YU were

added.

• Table 1 “Product overview” added

• Table 8 “Characteristics” V_i(on)redeﬁned to V_I(on)on-state input voltage

• Table 8 “Characteristics” V_i(off)redeﬁned to V_I(off)off-state input voltage

• Figure 1, 2, 3 and 4 added

• Section 9 “Packing information” added

PDTC123YT_2

PDTC123YT_1

20040510

Objective data sheet

-

9397 750 13208 PDTC123YT_1

9397 750 12555

20040406

Objective data sheet

-

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

9 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

11. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

13. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14017

Product data sheet

Rev. 03 — 24 March 2005

10 of 11

PDTC123Y series

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

15. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 3

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

Packing information. . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Contact information . . . . . . . . . . . . . . . . . . . . 10

3

4

5

6

7

8

9

10

11

12

13

14

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 24 March 2005

Document number: 9397 750 14017

Published in The Netherlands


型号：	PDTC123YK
厂家：	NXP
描述：	NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm NPN电阻配备晶体管; R1 = 2.2千欧姆，R2 = 10千欧姆晶体晶体管开关光电二极管
文件：	总11页 (文件大小：80K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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