PDTC114YM [NXP]
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ; NPN电阻配备晶体管; R1 = 10 kΩ的, R2 = 47 kΩ的型号: | PDTC114YM |
厂家: | NXP |
描述: | NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ |
文件: | 总14页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114Y series
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
2004 Aug 17
Supersedes data of 2003 Sep 10
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
PARAMETER
TYP. MAX. UNIT
• Simplified circuit design
VCEO
collector-emitter
voltage
−
50
V
• Reduction of component count
• Reduced pick and place costs.
IO
output current (DC)
bias resistor
−
100
−
mA
kΩ
kΩ
R1
R2
10
47
bias resistor
−
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC114YE
PDTC114YEF
PDTC114YK
PDTC114YM
PDTC114YS
PDTC114YT
PDTC114YU
SOT416
SOT490
SC-75
SC-89
SC-59
SC-101
SC-43
−
33
12
PDTA114YE
PDTA114YEF
PDTA114YK
PDTA114YM
PDTA114YS
PDTA114YT
PDTA114YU
SOT346
47
SOT883
DU
SOT54 (TO-92)
SOT23
TC114Y
*27(1)
*30(1)
SOT323
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 17
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
DESCRIPTION
base
PDTC114YS
2
collector
emitter
handbook, halfpage
2
3
3
R1
1
2
3
1
R2
MAM364
PDTC114YE
PDTC114YEF
PDTC114YK
PDTC114YT
PDTC114YU
1
2
3
base
emitter
collector
handbook, halfpage
3
3
2
R1
R2
1
1
2
Top view
MDB269
PDTC114YM
1
2
3
base
emitter
collector
handbook, halfpage
3
2
R1
R2
2
1
3
1
bottom view
MHC506
2004 Aug 17
3
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
50
10
open collector
positive
−
−
−
−
+40
−6
V
V
negative
IO
output current (DC)
peak collector current
total power dissipation
SOT54
100
100
mA
mA
ICM
Ptot
Tamb ≤ 25 °C
note 1
−
−
−
−
−
−
−
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
SOT23
note 1
SOT346
note 1
SOT323
note 1
SOT416
note 1
SOT883
notes 2 and 3
notes 1 and 2
SOT490
Tstg
Tj
storage temperature
junction temperature
operating ambient temperature
−65
−
°C
Tamb
−65
°C
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
SOT54
note 1
250
500
500
625
833
500
500
K/W
K/W
K/W
K/W
K/W
K/W
K/W
SOT23
note 1
SOT346
SOT323
SOT416
SOT883
SOT490
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 17
4
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
VCB = 50 V; IE = 0
MIN.
TYP. MAX. UNIT
collector-base cut-off current
collector-emitter cut-off current
−
−
100
1
nA
μA
μA
μA
ICEO
VCE = 30 V; IB = 0
−
−
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
50
150
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
VCE = 5 V; IC = 5 mA
100
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
−
100
0.5
−
mV
V
input-off voltage
input-on voltage
input resistor
IC = 100 μA; VCE = 5 V
−
0.7
0.8
10
IC = 1 mA; VCE = 0.3 V
1.4
7
V
13
kΩ
R2
-------
resistor ratio
3.7
4.7
5.7
2.5
R1
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
pF
2004 Aug 17
5
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
w
M
B
1
p
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT416
SC-75
2004 Aug 17
6
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Plastic surface-mounted package; 3 leads
SOT346
E
A
D
B
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w M
B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
A
p
1
p
1
E
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
1.9
0.95
0.2
0.2
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-11
06-03-16
SOT346
TO-236
SC-59A
2004 Aug 17
7
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2004 Aug 17
8
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
04-11-16
SOT54
TO-92
SC-43A
2004 Aug 17
9
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Aug 17
10
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
2004 Aug 17
11
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
Plastic surface-mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
b
w M
1
B
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-07-28
06-03-16
SOT490
SC-89
2004 Aug 17
12
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
PDTC114Y series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Aug 17
13
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp14
Date of release: 2004 Aug 17
Document order number: 9397 750 13665
相关型号:
PDTC114YM,315
PDTC114Y series - NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ DFN 3-Pin
NXP
PDTC114YT,215
PDTC114Y series - NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ TO-236 3-Pin
NXP
PDTC114YT-Q
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩProduction
NEXPERIA
©2020 ICPDF网 联系我们和版权申明